Asian CVD Conference
1999 ASIAN CONFERENCE ON CHEMICAL
VAPOR DEPOSITION SPONSORED BY:Thin Films Committee, Vacuum Society of China SCHEDULE FOR PAPER SUBMISSIONAbstract due: Mar. 1, 1999 The symposium is intended to focus on, but
not limited to, paper covering the following topics related to CVD:
CONFERENCE LANGUAGEThe official language is English. INSTRUCTIONS FOR ABSTRACTOne page abstract should be written on high
quality paper, size A4. Use Times New Roman font (if possible) 12
points and single line spacing. The margin on each side and bottom
should be 2.5 cm. The margin at the top should be 3 cm. Write the
title in bold with capital letters. The author names (L.-T. Zhang,
...) with affiliation and contact information (address, phone, Fax
and email) is separated by two spacings from title. Title (in capitals,
14 point, bold) and the names should be centered. Use three spacings
in between the text and the title information. The text can be include
figures and references but it should fit inside the given margins.
SCHEDULEIt is scheduled to hold in May of 1999, in
Shanghai, China; and a tour to Yellow Mountain will be organized
after the conference. CHAIRS
CO-CHAIRS
GENERAL SECRETARY:David Wei Zhang INTERNATIONAL ORGANIZATION BOARDKow-Ming Chang LOCAL ORGANIZATION COMMITTEETian-Hui Shen , Jiao-Tong Univ., Shanghai
Guang-Yao Meng, Chinese University of Science & Technology,
Hefei, China FURTHER INFORMATIONAssoc. Prof. David Wei Zhang Department
of Electronic Engineering, Fudan University, 220 Handan Rd.,
Shanghai 200433, China
MEETING PROGRAM
May 9~ 10 8:00~22:00 Registration, Lobby of Baolong Hotel Conference Organizer Room: Room No. 835, Tel: (021) 65425425-835 ext
May 11 Morning Location: International Convention Centre Chairman: Jun-Wu Liang, Ji-Tao Wang, David Wei Zhang CoChairman: Kow-Ming Chang, Wei William Lee, Shi-Woo Rhee, Yukihiro Shimogaki
8:30~9:00 Opening
Chairman: Jun-Wu Liang, G. A. J. Amaratunga
1- 1. 9:00 Boris V. Spitsyn Diamond CVD: origin, evolution and some future prospects 1- 2. 9:25 G. A. J. Amaratunga, I. Alexandrou, M. Chhowalla, C. J. Kiely, Arc-plasma deposition of hard carbon films with novel structure 1- 3. 9:50 Sang-Woo Kang, Sang-Ho Han, Shi-Woo Rhee Metal organic chemical vapor deposition of copper thin films from (hfac)Cu(vch) and (hfac)Cu(4mp)
Break 10:15-10:30
1- 4. 10:30 Y. Hatanaka, T. Aoki, A. M. Wrobel, S. Wickramanayaka, Experiments and analyses of SiC thin film deposition from organo-silicon by a remote plasma method 1- 5. 10:55 Joe Greene, The role of H in inhibiting Ge segregation and mediating dopant incorporation during Si1-xGex ALE and UHV-CVD/GA-MBE: kinetics and reaction pathways 1- 6. 11:20 Ji-Tao Wang, David Wei Zhang From CVD diamond to life science
Afternoon Location: HuiRui Hall
Chairman: S. Matsumoto, E. Kohn 2a- 1. 13:30 B. Hillebrands, T. Wittkowski, J. Jorzick, K. Jung Characterization of elastic properties of hard and superhard coating materials using the Brillouin light scattering technique (invited) 2a- 2. 13:55 Xuantong Ying, Xinmin Xu CVD diamond thin film for IR optics and X-Ray optics 2a- 3. 14:10 Takeshi Kobayashi, Takeshi Hosomi, Tetsuro Maki Enhanced diamond film growth by Xe-added, microwave plasma CVD (invited) 2a- 4. 14: 35 D. M. Li, R. Hernberg On the thermal and catalytic dissociation of hydrogen by hot filament for diamond growth 2a- 5. 14: 50 C. Chang, Z. Y. Ye, Y. Liao, G. Z. Wang, R. C. Fang, Programming control of hot-filament chemical vapor deposition diamond film growth process via in-situ optical emission spectroscopy 2a- 6. 15: 05 W. -L. Wang, K. -J. Liao, B. Feng, B. -B. Wang, Effect of deposition conditions on electronic properties of diamond films produced by HF CVD
Break 15:20-15:35 2a- 7. 15:35 H. A. Naseem, W. D. Brown, A. P. Malshe Comparison of seeding techniques for chemical vapor deposited diamond films (invited) 2a- 8. 16:00 B. Y. Miao, B. Zhang, Q. A. Huang Diamond synthesis on large area of silicon substrate by chemical vapor deposition 2a- 9. 16: 15 David Wei Zhang, Zhi-Jie Liu, S.-J. Ding, Jian-Yun, Zhang, P.-F. Wang Calculation of phase diagrams for diamond growth from CO/H2 gas mixtures under low pressure 2a- 10. 16:30 Neville L. Arthur, Ian A. Cooper, Luke A. Miles, Rates of reactions of H atoms with some CVD substrates 2a- 11. 16:45 T. Shen, X. C. He, H. S. Shen, Y. Z. Wan, Z. M. Zhang, Experimental characterization of bias enhanced nucleation of oriented diamond on Si(100) substrate 2a- 12. 17:00 M. K. Fung, K. H. Lai, W. C. Chan, I. Bello, C. S. Lee, N. B. Wong, S. T. Lee, Mechanical properties and interfacial investigation of amorphous carbon on magnetic disks prepared by ECR plasma technique 2a- 13. 17:15 X. Q. Meng, Q. Wang, H.Huang, H. X. Guo, G. Zhang, X. J. Fan, The Characteristics of Ga-nanoclusters in R-ICB and rf-ICB techniques and XPS study of GaN thin films
Afternoon Location: HuiZhi Hall Chairman: Shi-Woo Rhee, Kei May Lau 2b- 1. 13: 30 Zhe Chuan Feng, CVD growth and materials characterization of 3C-, 6H- and 4H-SiC (invited) 2b- 2. 13:55 Yulong Shi, Hongrui Peng, Shizhi Li, The investigation of hard films coated with MOPCVD 2b- 3. 14:10 T. Aoki, T. Ikeda, D. Korzec, Y. Hatanaka, ZnSe growth by radical assisted MOCVD using hollow cathod plasma 2b- 4. 14:25 X.-Z. Ding, F.-M. Zhang, X.-H. Liu, Reactive ion beam assisted deposition of a titanium dioxide film on a transparent polyester sheet 2b- 5. 14:40 X. Jiang, M. Bremser, Uniformity and precursor efficiency of production MOVPE reactions 2b- 6. 14:55 Yue Wang, Bingwen Song, Chaowang Liu, Hui Huang, Jingyu Wang, Yulin Yang, Wangqi Jie, Yaohe Zhou, The choice of substrate materials for HGCDTE films grown by MOCVD 2b- 7. 15:10 Xiaodong Fang, Minoru Tachiki, Takeshi Kobayashi, Preparation of SrRuO3 thin film by chemical reactive pulsed laser deposition
Break 15:25-15:40 2b- 8. 15:40 Z. G. Ji, M. S. Xu, Q. F. Xu, J. Yuan, D. L. Que, H.-Z. Chen, M. Wang, Y. Ueda, XPS study of vacuum deposited PbPc film exposing to HCl 2b- 9. 15:55 Buwen Cheng, Zhou Yu, Daizong Li, Changjun Huang, Jinzhong Yu, Qiming Wang, Growth of Si and films by cold-wall UHV/CVD using SiH4 and Si2H6 2b- 10. 16:10 R. Dhanasekaran, P. Ramasamy, Growth and characterization of II-VI and I-III-VI2 compounds by CVD 2b- 11. 16:25 Zhuo Yu, Daizong Li, Buwen Cheng, Changjun Huang, Jinzhong Yu, Qiming Wang, and Junwu Liang, A surface kinetics models for the Si1-xGex growth from SiH4 and GeH4 2b- 12. 16:40 X. L. Sun, Y. T. Wang, Hui Yang, J. B. Li, L. X. Zheng, D. P. Xu, Z. G. Wang, The content calculation of hexagonal phase inclusion in cubic GaN film grown by metalorganic chemical vapor deposition on GaAs (001) 2b- 13. 16:55 Xuan-Ying Lin, Kui-Xun Lin, Kou-He Yan, Chu-Ying Yu, Wang-Zhou Shi, Hou-Yun Liang, Yun-Peng Yu, Yan-Ping Xu, Potoluminescent mechanism of nano-crystalline silicon films 2b- 14. 17:10 Junfu Zhao, Zhenghuang Wu, Fang Tian, Zhengming Wu, Wenjun Li, Optical properties of TiO2 thin films prepared by chemical vapor deposition
May 11 Evening 19:00-22:30 Location: HuiZhi Hall Poster section: p- 1. Yue Wang, Bingwen Song, Wangqi Jie, Yaohe Zhou, The comparison on epitaxial growth of HGCDTE films p-2. Changxiang Wang, Zhiqing Chen, Zhongyang Liu, Peilu Wang, Xiaodong Liao, Characterization of hydroxyapatite coatings produced by ion beam assisted deposition p- 3. Z.-M. Zhang, H.-S. Shen, Y.-Z. Wan, X.-C. He, Test of CVD diamond-coated drawing die p- 4. Zhenghuang Wu, Study on the photocatalytic TiO2 film for treating phenol solution p- 5. M.-S. Xu, Z.-G. Ji, Q.-F. Xu, J. Yuan, D.-L. Que, H.-Z. Chen, M. Wang, Photoconductive properties of CLALPC and CLINPC composite thin films prepared by PVD method p- 6. L.-Y. Shi, C.-Z. Li, D.-Y. Fang, A.-P. Chen, Y.-H. Zhu, Synthesis of nanosized rutile titania particles with TiCl4-AlCl3-O2 by high temperature reaction p- 7. Jia-Qiang, Xu, Xian-Jun Zhang, Li-Ying Chen, Yu-Ping Chen, Gas sensing properties of a-Fe2O3 ceramics made by PCVD p- 8. M.-S. Xu, Z.-G. Ji, Q.-F. Xu, J. Yuan, D.-L. Que, H.-Z. Chen, M. Wang, PVD growth of TiOPc thin film and photoconductivity p- 9. Dan Xie, Yadong Jiang, Zhiming Wu, Yanrong Li, Study on the behavior of langmuir monolayer at gas-liquid interface p- 10. G.-Y. Meng, M. Pan, D. K. Peng, MOCVD with single mixed solid metal diketonate chelates as precursor for multi-component thin films) p- 11. G.-Y. Meng, H. B. Wang, D. K. Peng, Aerosol and plasma assisted chemical vapor deposition process for multi-component oxide thin films p- 12. W.-L. Wang, K. -J. Liao, B. Feng Enhancement of thin film light emitting devices based on heterostructures of ladder-type poly (p-phenylene) p- 13. Hui Yan, Bo Wang, Xuemei Song, Guanghua Chen, S. P. Wong, R. W. M. Kwok, Structure characteristic of buried SiC layers p- 14. Xuemei Song, Bo Wang, Xingwang Zhang, Guanghua Chen, Hui Yan, Quantum chemistry study of CVD diamond films on Si substrates p- 15. Shimei Liu, Yuxiu Sun, Yilong Hao, Zhixiong Xiao, Sacrifical layer process in surface mems technology p- 16. Daqing Liu, Changyuan Tao, Kun Tao, Jun Wang, The Growth of large area 3C-SiC films by vacuum hot process p- 17. YuanWei Song, Bin Zhao, Wear-Resistan Electroless Copper Composite Coatings p- 18. L.-Y. Shi, Morphology and photocatalytic activities of ultrafine TiO2 synthesized in aerosol reactor p- 19. G. Z. Wang, C. Chang, Y. Liao, Q. Y. Shao, Q. Wan, Y. R. Ma, R. C. Fang Surface characteristics of CVD diamond films improved by ultrasonic treatment in the alcohol solution p- 20. Jianyun Zhang, David Wei Zhang, Pengfei Wang, Shijin Ding, Zhijie Liu, Ji-Tao Wang Thermodynamic research on orientation growth of CVD diamond film in C-H system p- 21. Zhi-Jie Liu, David Wei Zhang, Shi-Jin Ding, Peng-Fei Wang, Jian-Yun Zhang, Ji-Tao Wang Driving force for CVD diamond growth with fluorine addition p- 22. Zhi-Jie Liu, David Wei Zhang, Peng-Fei Wang, Shi-Jin Ding, Jian-Yun Zhang, Ji-Tao Wang Projective phase for diagrams for CVD diamond growth from C-H and C-H-O systems p- 23. David Wei Zhang, Zhi-Jie Liu, Shi-Jin Ding, Peng-Fei Wang, Jian-Yun Zhang, Ji-Tao Wang Calculated phase diagrams for CVD diamond growth from CH4/CO2 gases p- 24. Chang-Yuan Tao, Da-Qing Liu, Kun Tao, Ying Chen, Investigation on chemical vapor deposition and characterestics of 3C-SiC films p-25 Charles H. Kruger, Thomas G. Owano, Scott K. Baldwin, Jr., Maosheng Zhao, Enhanced deposition rate of diamond thin films in an atmospheric pressure plasma CVD p-26 V. K. Sarin, Composite CVD coatings p-27 T. R. Yang, C. C. Lu, W. C. Chow, Z. C. Feng, Mode behaviors and optical studies of MBE growth Zn+MnxSe epitaxial films p-28 H. Y. Jia, X. J. Jin, J. S. Zhang, W. Qian, P. Y. Chen, P. H. Tsien, Ultra-high vacuum chemical vapor deposition of Si/SiGe thin films and its application in device fabrication p-29 F. X. Lu, G. F. Zhong, W. Z. Tang, T. B. Huang, Y. M. Tong, W. X. Yu, Morphological instabilities in the growth of thick diamond wafers by high power DC Arc plasma jet p-30 X. C. He, T. Shen, H. S. Shen, Y. Z. Wan, Z. M. Zhang, Growth of heteroepitaxial diamond on Si(100) substrate p-31 Qingyi Pan, Jianping Zhang, Xiaowen Dong, Xiuzhen Liu, Formation of SnO2 Thin films Prepared by the Sol-Gel Process p-32 L. -Y. Shi, Morphology and photocatalytic actives of ultrafine TiO2 synthesized in aerosol reactor,
May 12 Morning Location: International Convention Centre Chairman: David Wei Zhang, M. N. R. Ashfold
3- 1. 8:00 Seiichiro Matsumoto, Chemical vapor deposition of diamond 3- 2. 8:25 Kei May Lau, GaN growth by OMVPE, with conventional and alternate nitrogen sources 2- 3. 8:50 Chuanbao Cao, Qiang Fu, Hesun Zhu, Deposition of diamond-like carbon films from organic liquids 3- 4. 9:15 Ian H. Wilson, Synthesis of nanostructured materials by implantation using a metal vapor vacuum Arc ion source
Break 9:40-9:55 3. 5. 9:55 Yong-Fa Wang, Application of mathematical models for process control and yield enhancement 3 -6. 10:20 Eui Seong Hwang, Jihwa Lee, A novel concept in MOCVD: a monolayer of adsorbate as a catalyst and surfactant 3 -7. 10.45 Katharina Kohse-Hinghaus, Investigations of the gas phase mechanism of diamond deposition in combustion CVD 3 -8. 11:10 Wei William Lee, Hongwen Li, Robert R. Reeves, Low temperature deposition of Al, Cu and W metals using hydrogen atom assisted CVD
Afternoon Location: HuiRui Hall Chairman: B. V. Spitsyn, H. A. Naseem 4a- 1. 14:00 Michael N. R. Ashfold, Stephen A. Redman, James A. Smith, Moray A. Cook, H atom production and loss processes in a hot filament chemical vapor deposition reactor(invited) 4a- 2. 14:25 M. Q. Ding, A. R. Krauss, O. Auciello, D. M. Gruen, Y. Huang, V. V. Zhirnov, E. I. Givargizov, A conformal nanocrystalline diamond thin film coated on Si tips by microwave plasma enhanced CVD 4a- 3. 14:40 Z. F. Zhou, I. Bello, V. Kremnican, L. K. Y. Li, C. S. Lee, S. T. Lee, Formation of cubic boron nitride films on nickel substrates 4a- 4. 14:55 Jinxiang Deng, Bo Wang, Hui Yan, Guanghua Chen, The growth of cubic boron nitride films by radio frequency reactive sputter 4a- 5. 15:10 Y. Liao, C. Chang, C. H. Li, Z. Y. Ye, G. Z. Wang, R. C. Fang, Two steps growth of high quality diamond films
Break 15:25-15:40 4a- 6. 15:40 Alix Gicquel, Xauier Duten, Diamond growth in various environments (invited) 4a- 7. 16:05 Z. H. Zhang, H. X. Guo, X. J. Fan, Formation and characterization of CNX thin films: Structure, Chemical state and Photoluminescence 4a- 8. 16:20 Manju Malhotra, Satyendra Kumar, Deposition of highly tetrahedral hydrogenated amorphous carbon films using direct current glow discharge plasma CVD (invited) 4a- 9. 16:45 Lee Chow, Dan Zhou, Kleckley Steve, Hao Wang, Ashfaq Hussain, Chemical vapor deposition of novel carbon materials 4a- 10. 17:00 Yongdong Zhou, Jiaxiong Fang, Yangjing Li, Dingyuan Tang, The Study of the ZnS film formed by Ar beam sputtering deposition, 4a- 11. 17:15 Zengsun Jin, ChangZhi Gu, Xianyi Lu, Jiayu Wang, Zhigang Jiang and Yizhen Bai, The investigation of characteristics of radiation hardening and high temperature resistance of IC fabricated using SOD wafer, (invited)
Afternoon Location: HuiZhi Hall Chairman: Y. Hatanaka, William S. Rees 4b- 1. 14:00 Lee L. Luo, CVD BST for high density dram applications (invited) 4b- 2. 14:25 H. Funakubo, K. Nagashima, K. Shinozaki, N. Mizutani, Comparison of deposition behavior of Pb(Zr,Ti)O3 films and its end-member-oxide films prepared by MOCVD 4b- 3. 14:40 Yi Pan, Kai Xie, Min Hua Su, Effect of Ar, H2, NH3 on pyrolysis of organsilane precursor in the preparation of Si/C/N powders by CVD 4b- 4. 14:55 Masaki Matsushita, Mohd Zalid Bin Harun, Md. Abul Kashem, Shinzo Morita, Sulfur doped amorphous carbon film by plasma CVD of methane (invited) 4b- 5. 15:20 Guorui Dai, Ying Sun, Jin Nan, A study of polycyclopentadiene thin films prepared by plasma enhanced CVD and its C-V characteristics 4b- 6. 15:35 Seiji Motojima, Xiuqin Chen, Wan-In Huang, Mituhiro Fujii, Hiroshi Iwanaga, Preparation and properties of cosmo-mimetic carbon micro-coils/micro-tubes and ceramic micro-coils/micro-tubes by CVD process
Break 15:50-16:05 4b- 7. 16:05 Chongying Xu, Thomas H. Baum, From chemistry to advanced materials: chemical vapor deposition (CVD) via a liquid precursor delivery approach 4b- 8. 16:20 Yaowang Lin, Zhong Pan, Hai Wang and Zengqi Zhou, Epitaxial growth of GaNAs/ GaAs heterostucture materials 4b- 9. 16:35 Julian Hsieh, Dielectric HDPCVD process technology for 0.18um device applications 4b- 10. 16:50 T. Muramatsu, Y.-Y. Xu, T. Aoki, Y. Hatanaka, Preparation of SiC thin film from hexamethyldisilane by cathode-type RF glow discharge method 4b- 11. 17:05 Jianjun Zhu, Suying Liu, Junwu Liang, Raman study on residual strains in thin 3C-SiC epilayers grown on Si (100) 4b- 12. 17:20 A. V. Kasatkin, S. G. Andryushin, L. P. Kornienko, G. P. Chernova, A. E. Bekhly, Electrochemical behavior of titanium with molybdenum coating, deposed by means of diffusion gas saturation 4b- 13. 17:35 Q. F. Xu, Z. G. Ji, M. S. Xu, J. Yuan, D. L. Que, M. Wang, H. Z. Chen, UHV deposition of copper phthalocyanine thin film and its X-ray photoelectron spectroscopy
May 13 Morning Location: HuiRui Hall Chairman: I. H. Wilson, B. Hillebrands 5a- 1. 8:00 Rusli, S. F. Yoon, Q. F. Huang, H. Yang, J. Ahn, Q. Zhang, Study of molybdenum-carbon films (Mo-C:H) deposited using an electron cyclotron resonance chemical vapor deposition system 5a- 2. 8:15 Erhard Kohn, Wolfgang Ebert, Fabrication and advanced applications of electronic grade CVD diamond (invited) 5a- 3. 8:40 Jian Zhou, Yang-Bin Ai, Yun-Zhang Yuan, Bing-Chu Mei Research on the three-dimensional temperature field model of substrate heating material in microwave plasma CVD equipment 5a- 4. 8:55 I. Bello, M. K. Fung, W. J. Zhang, C. Sun, H. K. Lai, H. K. Woo, C. S. Lee, S. T. Lee, Effects at reactive ion etching of CVD diamond 5a- 5. 9:10 Jian-Chen Sun, Enke Li, Peixian Li, Yuqing Wang, Heming Zhang, Wenqing Jiang, Xianying Dai, Huiyong Hu, The "Zero Point" phenomena of deposition rate on deposition temperature in directly photolytic chemical vapor deposition
Break 9:25-9:40 5a- 6. 9:40 Jian Zhou, Wei He, Yun-Zhang Yuan, De-Sheng Jiang, Jian-Hua Wang, Research on plasma's emission spectra using optical fiber spectrograph in the course of microwave plasma CVD 5a- 7. 10:05 W. -L. Wang, K. -J. Liao, B. Feng Microstructure and semiconducting properties of c-BN films using RF Plasma CVD thermally assisted by a tungsten filament 5a- 8. 10:20 Haiyan Zhang, Aixiang Wei, Weixiang Wang, Lizheng Liang, Kexin Chen, Songhao Liu, The preparation of nanosized silicon by laser-induced chemical vapor deposition 5a- 9. 10:35 Y.-Y. Xu, T. Muramatsu, M. Taniyama, T. Aoki, Y. Hatanaka, Deposition of a-SiC:H thin film from organosilicon material by remote plasma CVD method 5a- 10. 10:50 Guorui Dai, Xiulai Xu, Maosong Tong, Jin Nan, A study of preparation and gas sensing properties of antimony oxide films 5a-11 Jia-Qiang Xu, Li-Ying Chen, Ping Hu, Yu-Ping Chen, PCVD of a-Fe2O3 thin films for gas Sensor
Morning Location: HuiZhi Hall Chairman: Jihwa Lee, K. Kohse-H(inghaus 5b- 1. 8: 00 Jung-Hyun Lee, Shi-Woo Rhee, Chemical vapor deposition of barium strontium titanate thin films using direct liquid injection of a mixture solution 5b- 2. 8:15 Yijun Sun and Guanqun Xia, Highly oriented hexagonal GaN thin films on cubic GaAs (100) substrates using hexagonal GaN as intermediate layer 5b- 3. 8:30 William S. Rees, Jr., Alternative dopant sources for GaN: Mg 5b- 4. 8:45 D. D. Huang, J. P. Lium R. H. Liu, J. P. Li, D. Z. Sun, M. Y. Kong, Characterization of Si/SiGe/Si n-p-n HBT structural materials by electrochemical Capacitance-voltage method 5b- 5. 9:00 Dapeng Xu, Hui Yang, J. B. Li, S. F. Li, Y. T. Wang, D. G. Zhao, S. L. Sun, R. H. Wu Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition 5b- 6. 9:15 Yingxue Li, Xing Zhang, Yangyuan Wang, Hongyi Lin, Growth mechanism of Nano-crystlline Silicon films
Break 9:30-9:45 5b- 7. 9:45 C. Liu, Y. Yan, B. Song, L. Yao, H. Huang, Growth and characteristics of highly uniform MCT layer grown by MOVPE 5b- 8. 10:00 G. Y. Meng, D. K. Peng, Chemical vapor deposition and inorganic membranes 5b- 9 10:15 Ruohe Yao, Xuanying Lin, Wu Pin, Yu Chuying, Lin Kuixun, Liu Yuzhou, Effect of substrate temperature on recrystallization of plasma chemical vapor depositied a-Si:H 5b- 10. 10:30 Qing-Yi Pan, Jing-qiang Yu, Jian-Ping, Zhang, Study on plasma-enhanced chemical vapor deposition at titanium oxide thin film 5b- 11. 10:45 Wen-Jun Li, Zheng-Huang Wu, Jun-Fu Zhao, Zeng-Ming Wu, Structural properties of titanium dioxide thin films deposition by MOCVD 5b- 12. 11:00 Wei William Lee, George Tyndall, Raymond Zehringer and Mark Crowder, Electron cyclotron resonce (ECR) plasma polymerization of low dielectric constant polymer 5b- 13. 11:15 Y. Mo, Q. Yue, H. Chen, J. Qing, X. Dong, H. Hui, G. Wu, Y. He, C. Liu, The preparation of CdZnTe substrates for MOCVD epitaxy of MCT film
|