Profile

Hyunsang Hwang 사진
Profile.
Name Hyunsang Hwang
Organization Dept of Materials Science & Enginrg
Telephone 279-2155
E-mail hwanghs@postech.ac.kr
Homepage http://www.sidp.kr

Education

  • 1988~1992 UNIV. OF TEXAS AT AUSTIN (박사-금속공학)
  • 1984~1988 서울대학교 (학사-금속공학)

Career

  • 1997~2012 : 광주과학기술원
  • 1992~1997 : LG 반도체

Profession

Journal Papers

International

  • Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices, APPLIED PHYSICS LETTERS, , 111, - (2017)
  • Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications, IEEE ELECTRON DEVICE LETTERS, , 38, 1220-1223 (2017)
  • Improved Conductance Linearity and Conductance Ratio of 1T2R Synapse Device for Neuromorphic Systems, IEEE ELECTRON DEVICE LETTERS, , 38, 1023-1026 (2017)
  • Nanometer-Scale Phase Transformation Determines Threshold and Memory Switching Mechanism, ADVANCED MATERIALS, , 29, - (2017)
  • Effect of a Self-Limited Reset Operation on the Reset Breakdown Characteristics of a Monolithically Integrated 1T1R RRAM, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , 6, 440-442 (2017)
  • In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface, Nanoscale, , 9, 582-593 (2017)
  • Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory, NANOTECHNOLOGY, , 28, - (2017)
  • Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application, IEEE ELECTRON DEVICE LETTERS, , 38, 568-571 (2017)
  • HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications, IEEE ELECTRON DEVICE LETTERS, , 38, 732-735 (2017)
  • Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high on/off ratio for selector application, Scientific Reports, , 7, - (2017)
  • Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO2-based RRAM devices for artificial neuron and synapse elements, MICROELECTRONIC ENGINEERING, , 182, 42-45 (2017)
  • Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications, IEEE ELECTRON DEVICE LETTERS, , 38, 1532-1535 (2017)
  • Excellent Threshold Selector Characteristics of Cu2S-based Atomic Switch Device, ECS Journal of Solid State Science and Technology, , , - (2017)
  • Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 64, 4763-4767 (2017)
  • Reduced off-current of NbO2 by thermal oxidation of polycrystalline Nb wire, ECS Journal of Solid State Science and Technology, , 6, 641-643 (2017)
  • Automatic ReRAM SPICE Model Generation From Empirical Data for Fast ReRAM-Circuit Coevaluation, IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, , 25, 1821-1830 (2017)
  • Excellent Threshold Selector Characteristics of Cu2S-based Atomic Switch Device, ECS Journal of Solid State Science and Technology, , 6, P586-P588 (2017)
  • Automatic ReRAM SPICE Model Generation From Empirical Data for Fast ReRAM-Circuit Coevaluation, IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, , 25, 1821-1830 (2017)
  • Communication-Impact of Filament Instability in an Ag2S-Based Conductive-Bridge RAM for Cross-Point Selector Applications, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , , - (2016)
  • Introduction of WO3 Layer in a Cu-Based Al2O3 Conductive Bridge RAM System for Robust Cycling and Large Memory Window, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, , , - (2016)
  • Role of Local Chemical Potential of Cu on Data Retention Properties of Cu-Based Conductive-Bridge RAM, IEEE ELECTRON DEVICE LETTERS, , , - (2016)
  • Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application, APPLIED PHYSICS LETTERS, , , - (2016)
  • Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM), AIP ADVANCES, , , - (2016)
  • Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAM, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, , , - (2016)
  • Communication-Comprehensive Assessment of a Back-to-Back Schottky Diode with Ultrathin TiO2 Layer for Cross-Point Selector Applications, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , 5, Q188-Q190 (2016)
  • Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier, AIP ADVANCES, , 6, - (2016)
  • Dynamics of electroforming and electrically driven insulator-metal transition in NbOx selector, APPLIED PHYSICS LETTERS, , 108, - (2016)
  • Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device, IEEE ELECTRON DEVICE LETTERS, , 37, 932-934 (2016)
  • Communication-Hourglass-Shaped Metal-Filament Switching Device with Multi-Layer (AlOX/TiO2) Oxide Electrolytes, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , 5, Q219-Q221 (2016)
  • Scalable Neuron Circuit Using Conductive-Bridge RAM for Pattern Reconstructions, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 63, 2610-2613 (2016)
  • TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing, IEEE ELECTRON DEVICE LETTERS, , 37, 1559-1562 (2016)
  • Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 63, 5064-5067 (2016)
  • Analog Synapse Device With 5-b MLC and Improved Data Retention for Neuromorphic System, IEEE Electron Device Letters, , 37, 1067-1070 (2016)
  • Improved Synaptic Behavior under Identical Pulses using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems, IEEE Electron Device Letters, , 37, 994-997 (2016)
  • Atomic-scale quantification of interdiffusion and dopant localization in GeSbTe-based memory devices, Applied Physics Letters, , 109, - (2016)
  • Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering, IEEE ELECTRON DEVICE LETTERS, , 36, 32-34 (2015)
  • Effect of AC pulse overshoot on nonlinearity and reliability of selectorless resistive random access memory in AC pulse operation, SOLID-STATE ELECTRONICS, , 104, 70-74 (2015)
  • Structurally Engineered Stackable and Scalable 3D Titanium-oxide Switching devices for High-density Nanoscale Memory, ADVANCED MATERIALS, , 27, 59-64 (2015)
  • Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-bit MLC applications, ECS Solid State Letters, , 4, 25-28 (2015)
  • Electronic system with memristive synapses for pattern recognition, SCIENTIFIC REPORTS, , 5, - (2015)
  • Optimization of Conductance Change in Pr1-xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems, IEEE ELECTRON DEVICE LETTERS, , 36, 457-459 (2015)
  • Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device, APPLIED PHYSICS LETTERS, , 106, - (2015)
  • Neuromorphic Hardware System for Visual Pattern Recognition With Memristor Array and CMOS Neuron, IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, , 62, 2410-2419 (2015)
  • Accelerated Retention Test Method by Controlling Ion Migration Barrier of Resistive Random Access Memory, IEEE ELECTRON DEVICE LETTERS, , 36, 238-240 (2015)
  • Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 62, 3498-3507 (2015)
  • A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy, MICRON, , 79, 101-109 (2015)
  • The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory, MICROELECTRONIC ENGINEERING, , 147, 321-324 (2015)
  • Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application, MICROELECTRONIC ENGINEERING, , 147, 318-320 (2015)
  • Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application, APPLIED PHYSICS LETTERS, , 107, - (2015)
  • Comprehensive analysis of electro thermally driven nanoscale insulator-metal transition SmNiO3-based selector for cross-point memory array, JAPANESE JOURNAL OF APPLIED PHYSICS, , 54, 4DD09- (2015)
  • Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array, IEEE ELECTRON DEVICE LETTERS, , 36, 681-683 (2015)
  • Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM, ECS SOLID STATE LETTERS, , 4, Q25-Q28 (2015)
  • Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application, APPLIED PHYSICS LETTERS, , 106, - (2015)
  • Switching mechanism of Al/La1-xSrxMnO3 resistance random access memory. I. Oxygen vacancy formation in perovskites, RSC ADVANCES, , 5, 102772-102779 (2015)
  • Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics, AIP ADVANCES, , 5, 127221- (2015)
  • Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering, IEEE ELECTRON DEVICE LETTERS, , 36, 32-34 (2015)
  • Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application, IEEE Electron Device Letters, , 35, 60-62 (2014)
  • Optimized lightning-rod effect to overcome trade-off between switching uniformity and on/off ratio in ReRAM, IEEE Electron Device Letters, , 35, 214-216 (2014)
  • Tunnel Barrier Engineering of Titanium Oxide for High Non-Linearity of Selector-less Resistive Random Access Memory, Applied Physics Letters, , 104, 52108- (2014)
  • Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory, Applied Physics Letters, , 104, 83507- (2014)
  • Neuromorphic Character Recognition System With Two PCMO Memristors as a Synapse, IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, , 61, 2933-2941 (2014)
  • Internal Resistor of Multi-Functional Tunnel Barrier for Selectivity and Switching Uniformity in Resistive Random Access Memory, NANOSCALE RESEARCH LETTERS, , 9, 364- (2014)
  • Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory, JOURNAL OF ELECTRONIC MATERIALS, , 43, 3635-3639 (2014)
  • A nitrogen-treated memristive device for tunable electronic synapses, Semiconductor Science and Technology, , 29, 104006-104010 (2014)
  • Hardware implementation of associative memory characteristics with analogue-type resistive-switching device, NANOTECHNOLOGY, , 25, 495204- (2014)
  • Stepwise set operation for reliable switching uniformity and low operating current of ReRAMs, SOLID-STATE ELECTRONICS, , 102, 42-45 (2014)
  • Nonlinear oscillations of a sessile drop on a hydrophobic surface induced by ac electrowetting, PHYSICAL REVIEW E, , 90, - (2014)
  • Highly Non-Linear Nitrogen Doped ZnO Based Selector Device for Cross-Point Array, ECS SOLID STATE LETTERS, , 3, P136-P139 (2014)
  • Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM, IEEE ELECTRON DEVICE LETTERS, , 35, 1022-1024 (2014)
  • Non-Linear I-V Characteristics of TiOy Film by Optimizing Thickness and Trap Density for Selector-Less ReRAM, ECS SOLID STATE LETTERS, , 3, P117-P119 (2014)
  • Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM), ECS SOLID STATE LETTERS, , 3, P120-P122 (2014)
  • Access devices for 3D crosspoint memory, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 32, - (2014)
  • Low-temperature spin-on-glass method involving high-pressure annealing for filling high-aspect-ratio structures, JAPANESE JOURNAL OF APPLIED PHYSICS, , 53, - (2014)
  • Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM, IEEE ELECTRON DEVICE LETTERS, , 35, 636-638 (2014)
  • Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory, APPLIED PHYSICS LETTERS, , 104, - (2014)
  • Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM, IEEE ELECTRON DEVICE LETTERS, , 35, 214-216 (2014)
  • Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices, IEEE Electron Device Letters, , 34, 235-237 (2013)
  • Effects of high-pressure annealing on random telegraph signal noise characteristic of source follower block in CMOS image sensor, IEEE Electron Device Letters, , 34, 190-192 (2013)
  • Thermally-activated device non-linearity in resistance-switching memory for cross-point array applications, Applied Physics Letters, , 102, 122115- (2013)
  • Threshold-Switching Characteristics of a Nanothin-NbO2-layer-based Pt/NbO2/Pt stack for Use in Cross-point-type Resistive Memories, Microelectronic Engineering, , 107, 33-36 (2013)
  • Hydrogenated IGZO thin-film transistors using high-pressure hydrogen annealing, IEEE Transactions on Electron Devices, , 60, 2537-2541 (2013)
  • Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM, Microelectronic Engineering, , 109, 385-388 (2013)
  • Selector-less RRAM with non-linearity of device for cross-point array applications, Microelectronic Engineering, , 109, 360-363 (2013)
  • Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device, Nanotechnology, , 24, 384009- (2013)
  • Defect Engineering Using Bilayer Structure in Filament-Type RRAM, IEEE Electron Device Letters, , 34, 1250-1252 (2013)
  • Highly reliable resistive switching without an initial forming operation by defect engineering, IEEE Electron Device Letters, , 34, 1515-1517 (2013)
  • Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-point Array Applications, IEEE Electron Device Letters, , 34, 1512-1514 (2013)
  • Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications, Applied Physics Letters, , 103, 202113- (2013)
  • Co-occurrence of Threshold Switching and Memory Switching in Pt/NbOx/Pt Cells for Crosspoint Memory Applications, IEEE ELECTRON DEVICE LETTERS, , 33, 236-238 (2012)
  • Characterization of ZnO nanowire field effect transistors by fast hydrogen peroxide solution treatment, JAPANESE JOURNAL OF APPLIED PHYSICS, , 51, - (2012)
  • Operation Voltage Control in Complementary Resistive Switches Using Heterodevice, IEEE ELECTRON DEVICE LETTERS, , 33, 600-602 (2012)
  • MIM-type cell selector for high-density and low-power cross-point memory application, MICROELECTRONIC ENGINEERING, , 93, 81-84 (2012)
  • Improved Switching Variability and Stability by Activating a Single Conductive Filament, IEEE ELECTRON DEVICE LETTERS, , 33, 646-648 (2012)
  • Highly Uniform and Reliable Resistance Switching Properties in Bilayer WOx/NbOx RRAM Devices, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, , 209, 1179-1183 (2012)
  • Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments, APPLIED PHYSICS LETTERS, , 100, - (2012)
  • Self-selective Characteristics of Nanoscale VOx Devices for High-density ReRAM Applications, IEEE ELECTRON DEVICE LETTERS, , 33, 718-720 (2012)
  • In-depth Study on the Effect of Active Area Scale-down of Solution-processed TiOx, IEEE ELECTRON DEVICE LETTERS, , 33, 869-871 (2012)
  • Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti 0.48)O 3/Pr 0.7Ca 0.3MnO 3/Nb-doped SrTiO 3 epitaxial heterostructure, APPLIED PHYSICS LETTERS, , 100, - (2012)
  • A study of the leakage current in TiN/HfO2/TiN capacitors, MICROELECTRONIC ENGINEERING, , 95, 71-73 (2012)
  • High Current Density and Nonlinearity Combination of Selection Device Based on TaOX/TiO2/TaOX Structure for One Selector-One Resistor Arrays, ACS NANO, , 6, 8166-8172 (2012)
  • Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices, NANOTECHNOLOGY, , 23, - (2012)
  • Low-Power and Controllable Memory Window in Pt/Pr0.7Ca0.3MnO3/Yttria-Stabilized Zirconia/W Resistive Random-Access Memory Devices, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, , 12, 3253-3255 (2012)
  • Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, , 6, 454-456 (2012)
  • Programmable analogue circuits with multilevel memristive device, ELECTRONICS LETTERS, , 48, 1415-1416 (2012)
  • Improvement of resistive switching uniformity by introducing a thin NbOx interface layer, ECS SOLID STATE LETTERS, , 1, Q35-Q38 (2012)
  • Communication-Hourglass-Shaped Metal-Filament Switching Device with Multi-Layer (AlOX/TiO2) Oxide Electrolytes, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , 5, Q219-Q221 (0020)

Domestic Journal Papers

General Journal Papers

  • Organic core-sheath nanowire artificial synapses with femtojoule energy consumption, Science advances, , 2, - (2016)
  • Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory, Physical Sciences Reviews, , , - (2016)

Conference Proceedings

Invited Talk or Presentations

  • NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (~2mV/dec) with ultra-low voltage operation and improved delay time, 2017 IEEE International Electron Devices Meeting (IEDM), 0, 0, - (2017)
  • Study on Insulator - metal transition characteristics of NbO2 for selector device, Non-Volatile Memory Technology Symposium 2017(NVMTS 2017), 0, 0, - (2017)
  • Reducing Circuit Design Complexity for Neuromorphic Machine Learning Systems Based on Non-Volatile Memory Arrays, 2017 IEEE International Symposium on Circuits and Systems (ISCAS), 0, 0, - (2017)
  • Excellent threshold switching device (I OFF ~ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (V DD = 0.25 V) FET applications, 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (2016 IEDM), 0, 0, - (2016)
  • Monolithic Integration of AgTe/TiO 2 based Threshold Switching Device with TiN liner for Steep Slope Field-Effect Transistors, 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (2016 IEDM), 0, 0, - (2016)
  • Accelerating machine learning with Non-Volatile Memory: Exploring device and circuit tradeoffs, IEEE INTERNATIONAL CONFERENCE ON REBOOTING COMPUTING (ICRC 2016), 0, 0, - (2016)
  • Large-scale neural networks implemented with Non-Volatile Memory as the synaptic weight element: Impact of conductance response, 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 0, 0, - (2016)
  • Te-Based Amorphous Binary OTS Device with Excellent Selector Characteristics for X-point Memory, 2016 SYMPOSIA ON VLSI TECHNOLOGY AND CIRCUITS, 0, 0, - (2016)
  • Full Chip Integration of 3-D Cross-Point ReRAM with Leakage-Compensating Write Driver and Disturbance-Aware Sense Amplifier, 2016 SYMPOSIA ON VLSI TECHNOLOGY AND CIRCUITS, 0, 0, - (2016)
  • Multilevel Conductance Switching of a HfO2 RRAM Array Induced by Controlled Filament for Neuromorphic Applications, IEEE SILICON NANOELECTRONICS WORKSHOP 2016 (SNW2016), 0, 0, - (2016)
  • Improved Endurance of RRAM by Optimizing Reset Bias Scheme in 1T1R Configuration to Suppress Reset Breakdown, IEEE SILICON NANOELECTRONICS WORKSHOP 2016 (SNW2016), 0, 0, - (2016)
  • Bidirectional Threshold Switching in Ag:Cu2O-based Multilayer Stack for Cross-Point Selector Application, 제23회 한국반도체학술대회, 0, 0, - (2016)
  • Demonstration of Bi-Directional Selector in 8 inch Wafer Process with Fully CMOS Compatibility for ReRAM Cross-Point Array, 제23회 한국반도체학술대회, 0, 0, - (2016)
  • Resistance Controllability and Variability Improvement in a TaOx- based Resistive Memory for Multilevel Storage Application, 제23회 한국반도체학술대회, 0, 0, - (2016)
  • Reliability of Hour-Glass Shaped Filament in a Cu-based Al2O3/WO3 Conductive Bridge RAM System, 제23회 한국반도체학술대회, 0, 0, - (2016)
  • Suppression of the Reset Breakdown Failure by using RuO2 Electrode in HfOx-based RRAM, 제23회 한국반도체학술대회, 0, 0, - (2016)
  • Effects of N-GST Buffer Layer on Switching Characteristics of CBRAM, 제23회 한국반도체학술대회, 0, 0, - (2016)
  • Effects of Gate Bias on Reset Failure in HfO2 based 1T1R ReRAM Cell, 제23회 한국반도체학술대회, 0, 0, - (2016)
  • Origin of Leakage Current of NbOx Film and Improved Threshold Switching Characteristics of Multi-layer NbOx Selector, 제23회 한국반도체학술대회, 0, 0, - (2016)
  • High density neuromorphic system with Mo/Pr0.7Ca0.3MnO3 synapse and NbO2 IMT oscillator neuron, ., 0, 0, - (2015)
  • Study on the Effect of Oxygen Vacancy Modulation of Tunnel Barrier and Switching Layer of ReRAM on Low Leakage current and Voltage Symmetry for ReRAM Cross-point Array, ., 0, 0, - (2015)
  • AC pulse characteristics of 1S(Selector)1R(ReRAM) device, ., 0, 0, - (2015)
  • Improved Threshold Switching Characteristics of Multi-layer NbOx for 3-D Selector Application, ., 0, 0, - (2015)
  • Comprehensive Methodology for ReRAM and Selector Design Guideline of Cross-point Array, ., 0, 0, - (2015)
  • Multi-state resistance switching and variability analysis of HfOx Based RRAM for ultra-high density memory applications, ., 0, 0, - (2015)
  • Towards High Performance Selector Device for 3D Stacked Cross-Point Arrays, ., 0, 0, - (2015)
  • Hardware Implementation of Associative Memory Characteristics, ., 0, 0, - (2015)
  • TiOx-based Filamentary ReRAM Synapse for Neuromorphic Systems, ., 0, 0, - (2015)
  • Multi-state resistance controllability and variability analysis of binary oxide RRAM for ultra-high density memory applications, ., 0, 0, - (2015)
  • Sub-Oxide Dependence of Insulator Metal Transition Characteristics on 3-D Structural Niobium Oxide Selector, ., 0, 0, - (2015)
  • Improvement in reliability characteristics (retention and endurance) of RRAM by using high-pressure hydrogen annealing, ., 0, 0, - (2015)
  • Selector-less ReRAM with an Excellent Selectivity by the Tunnel Barrier Engineered Multi-layer Titanium Oxide and Triangular Shaped AC Pulse, ., 0, 0, - (2015)
  • Effect of TiOx-based tunnel barrier on non-linearity and switching reliability of resistive random access memory, ., 0, 0, - (2014)
  • The Effect of Nitrogen doped GST Buffer Layer on Switching Characteristics of Conductive-Bridging RAM, ., 0, 0, - (2014)
  • 8’’Wafer-scale HfOx-based RRAM for 1S-1R Cross-point Memory Applications, ., 0, 0, - (2014)
  • Electro-thermal driven nano-scale IMT characteristics of SmNiO3 for selector application of cross-point memory array, ., 0, 0, - (2014)
  • Electrical and Reliability Characteristics of a Scaled (~30nm) Tunnel Barrier Selector (W/Ta2O5/TaOx/TiO2/TiN) with Excellent Performance (JMAX > 107A/cm2), ., 0, 0, - (2014)
  • Resistive-switching Analogue Memory Device for Neuromorphic Application, ., 0, 0, - (2014)
  • Improvement in Reliability Characteristics (retention and endurance) of RRAM by using High-Pressure Hydrogen Annealing, ., 0, 0, - (2014)
  • Direct Observation of Interfacial Switching Process of PrxCa1-xMnO3-Based Resistive Random Access Memory Devices Using in situ TEM, ., 0, 0, - (2014)
  • Building Artificial Brains using Redox-based Memristive Synapses, ., 0, 0, - (2014)
  • An Investigation of Electrical Characteristics in TiOx Thin Film by Controlling Oxygen Vacancy, ., 0, 0, - (2014)
  • Excellent Non-Linear I-V Characteristics of Ti/HfOx ReRAM with Ultrathin TiOy Tunnel Barrier for Cross Point Memory Application, ., 0, 0, - (2014)
  • Metal-Insulator-Transition in Nano Scale SmNiO3 for Selector Application with BEOL Compatibility, ., 0, 0, - (2014)
  • Improved synaptic characteristics of filamentary ReRAM by adopting interfacial oxide for neuromorphic device application, ., 0, 0, - (2014)
  • Improvement in the ON/OFF Ratio (~107) and Switching Uniformity of an Atom Switch Using TiOx Layer for Reconfigurable Logic Application, ., 0, 0, - (2014)
  • A Two-Step Set Operation for Reliability of ReRAM with Triple-Layer ReRAM, ., 0, 0, - (2014)
  • Improved Reliability of RRAM by Optimizing Pulse Shape to Minimize Current Overshoot, ., 0, 0, - (2014)
  • Neuromorphic Speech Systems Using Advanced ReRAM-Based Synapse, ., 0, 0, - (2013)
  • Nanoscale (~10nm) 3D Vertical ReRAM and NbO2 Threshold Selector with TiN Electrode, ., 0, 0, - (2013)
  • Selector-less ReRAM with an Excellent Non-Linearity and Reliability by the Band-Gap Engineered Multi-Layer Titanium Oxide and Triangular Shaped AC Pulse, ., 0, 0, - (2013)
  • BEOL Compatible (300oC) TiN/TiOx/Ta/TiN 3D nanoscale (~10nm) IMT Selector, ., 0, 0, - (2013)
  • Conducting filament engineering by triple-layer RRAM for uniform resistive switching, ., 0, 0, - (2013)
  • Study on nano-scale threshold switching behavior of NbOx film for ReRAM selector application, ., 0, 0, - (2013)
  • Excellent Reliability and Switching Uniformity of RRAM by Optimizing SET/RESET Pulse Shape to Minimize Current Overshoot, ., 0, 0, - (2013)
  • A Two-Step Set Operation for Highly Uniform Resistive Swtiching ReRAM by Controllable Filament, ., 0, 0, - (2013)
  • Selector-less RRAM with Non-linearity of Device for Cross-point Array Applications, ., 0, 0, - (2013)
  • Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM, ., 0, 0, - (2013)
  • Multi-layer tunnel barrier (Ta2O5/TaO x/TiO2) engineering for bipolar RRAM selector applications, ., 0, 0, - (2013)
  • RRAM-based Synapse for Neuromorphic System with Pattern Recognition Function, ., 0, 0, - (2012)
  • Programmable Analog Circuits with Multi-level Memristive device, ., 0, 0, - (2012)
  • TiOx Layer Engineering for Producing Non-Linear Characteristic in HfOx-based Resistive Random Access Memory, ., 0, 0, - (2012)
  • Hybrid Memory Device with Both Memory and Selector Characteristics, ., 0, 0, - (2012)
  • Selector Devices for Cross-point ReRAM, ., 0, 0, - (2012)
  • Ultrathin (<10nm) Nb2O5/NbO2 Hybrid Memory with Both Memory and Selector Characteristics for High Density 3D Vertically Stackable RRAM Applications, ., 0, 0, - (2012)
  • Varistor-type Bidirectional Switch (JMAX>107A/cm2, Selectivity~104) for 3D Bipolar Resistive Memory Arrays, ., 0, 0, - (2012)
  • Bidirectional Selection Device Characteristics of Ultra‐Thin(<3nm) TiO2 layer for 3D Vertically Stackable ReRAM Application, ., 0, 0, - (2012)
  • Increasing Interfacial Fixed Charge at Al2O3/Si Using High Pressure Oxygen Annealing for Solar Cell Application, ., 0, 0, - (2012)
  • Improved Switching Uniformity in Ge2Sb2Te5 Based Resistive Switching Memory Device by Using Internal Resistor, ., 0, 0, - (2012)
  • A new read scheme using-built in selectivity for high-density cross-point array resistive switching memory application, ., 0, 0, - (2012)
  • Ferroelectricity Induced Resistance Switching in PZT/PCMO/Nb:STO Epitaxial Heterostructure, ., 0, 0, - (2012)

Books

  • Neuro-inspired Computing Using Resistive Synaptic Devices, Springer, 269, 황현상(공동); Daeseok Lee(공동) (2017)
  • Advances in Neuromorphic Hardware Exploiting Emerging Nanoscale Devices, Springer, 210, 황현상(공동) (2017)
  • Nano Devices and Sensors / Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory, Walter de Gruyter GmbH & Co KG, , 황현상(공동) (2016)
  • Nano Devices and Sensors / Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory, Walter de Gruyter GmbH & Co KG, , 황현상(공동) (2016)
  • Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications / Select device concepts for crossbar arrays, Wiley‐VCH Verlag GmbH & Co. KGaA, , 황현상(공동) (2016)
  • Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications / Select device concepts for crossbar arrays, Wiley‐VCH Verlag GmbH & Co. KGaA, , 황현상(공동) (2016)

Research Activities

  • 저항변화메모리(RERAM)용 선택소자 개발 및 신뢰성 평가, 에스케이하이닉스 주식회사 (2012-2013)
  • OXIDE-BASED RESISTIVE MEMORY VARIABILITY, SEMICONDUCTOR RESEARCH CORPORATION (2012-2013)
  • THE DEVELOPMENT OF RERAM FOR NEXT GENERATION NON-VOLATILE MEMORY, 광주과학기술원 (2011-2012)
  • NEUROMORPHIC SEMICONDUCTOR DEVICE AND ITS APPLICATIONS, 광주과학기술원 (2012-2012)
  • THE DEVELOPMENT OF RERAM FOR NEXT GENERATION NON-VOLATILE MEMORY, 재단법인한국연구재단 (2012-2013)
  • 창의자본 기반조성사업(IP 인큐베이션 특허풀 구축 및 활용 사업), 인텔렉추얼디스커버리 주식회사 (2012-2012)
  • DEVELOPMENT OF RERAM DEVICE, 포항공과대학교 (2012-2013)
  • 신규부임교수 기자재지원비(대학부담), 포항공과대학교 (2012-2013)
  • 신규부임교수 기자재지원비(학과부담), 포항공과대학교 (2012-2013)
  • DEVELOPMENT OF FUNDAMENTAL TECHNOLOGIES FOR TERA BIT LEVEL 3D RERAM, 에스케이하이닉스 주식회사 (2012-2013)
  • 패턴 인식 기능을 가진 NEUROMORPHIC CHIP 구현을 위한 ARRAY 개발, 삼성전자(주) (2012-2012)
  • 저항변화메모리(RERAM)소자 개발, 포항공과대학교 (2012-2013)
  • DEVELOPMENT OF HIGH DENSITY SYNAPSE AND INTEGRATION PROCESS FOR NEUROMORPHIC DEVICE, 재단법인한국연구재단 (2012-2013)
  • POSTECH-삼성전자 RERAM 클러스터 연구과제(황현상), 삼성전자(주) (2012-2013)
  • 재구성(RECONFIGURABLE) NV-LOGIC반도체용 스위칭 소자 기술, 인텔렉추얼디스커버리 주식회사 (2013-2013)
  • (학생)인건비풀링과제, 포항공대산학협력단 (2013-2020)
  • DEVELOPMENT OF RERAM DEVICE, 포항공과대학교 (2013-2014)
  • 신규부임교수 기자재지원비(대학부담), 포항공과대학교 (2013-2014)
  • 신규부임교수 기자재지원비(학과부담), 포항공과대학교 (2013-2014)
  • DEVELOPMENT OF FUNDAMENTAL TECHNOLOGIES FOR TERA BIT LEVEL 3D RERAM, 에스케이하이닉스 주식회사 (2013-2014)
  • 고압열처리 공정을 이용한 차세대 반도체기술개발, (주) 풍산 동탄사업장 (2013-2015)
  • DEVELOPMENT OF HIGH DENSITY SYNAPSE AND INTEGRATION PROCESS FOR NEUROMORPHIC DEVICE, 재단법인한국연구재단 (2013-2014)
  • 학부학생연구프로그램, 포항공과대학교 (2013-2013)
  • 4.8830의 이월과제, 포항공과대학교 (2013-2014)
  • DEVELOPMENT OF LOW POWER RECONFIGURABLE IC (ATOMIC SWITCH/NEMS DEVICE) WITH 100NSEC PROGRAM/ERASE SPEED AND SUB-100 NM, 한국산업기술평가관리원 (2013-2014)
  • 100 NSEC의 PROGRAM/ERASE SPEED를 갖는 100 NM 이하의 초저전력 RECONFIGURABLE 반도체 소자 (ATOMIC SWITCH, NEMS 소자) 및 소재 원천 기술개발, (사)한국반도체연구조합 (2013-2014)
  • 인건비풀링과제, 포항공과대학교 (2013-2015)
  • 자체연구개발과제, 포항공과대학교 (2013-2015)
  • POSTECH-삼성전자 RERAM 클러스터 연구과제(2차년도), 삼성전자(주) (2013-2014)
  • DEVELOPMENT OF HIGH DENSITY SYNAPSE AND INTEGRATION PROCESS FOR NEUROMORPHIC DEVICE, 재단법인한국연구재단 (2014-2015)
  • DEVELOPMENT OF FUNDAMENTAL TECHNOLOGIES FOR TERA BIT LEVEL 3D RERAM, 에스케이하이닉스 주식회사 (2014-2015)
  • INSULATOR-METAL TRANSITION PHYSICS AND DEVICES, SEMICONDUCTOR RESEARCH CORPORATION (2014-2015)
  • 4.9630, 4.9825 이월과제, 재단법인한국연구재단 (2014-2015)
  • Development of low power reconfigurable IC (atomic switch/NEMS device) with 100nsec program/erase speed and sub-100 nm, 한국산업기술평가관리원 (2014-2015)
  • DEVELOPMENT OF LOW POWER RECONFIGURABLE IC (ATOMIC SWITCH/NEMS DEVICE) WITH 100NSEC PROGRAM/ERASE SPEED AND SUB-100 NM, 한국산업기술평가관리원 (2014-2015)
  • [민간]100 NSEC의 PROGRAM/ERASE SPEED를 갖는 100 NM 이하의 초저전력 RECONFIGURABLE 반도체 소자 (ATOMIC SWITCH, NEMS 소자) 및 소재 원천 기술개발, (사)한국반도체연구조합 (2014-2015)
  • POSTECH-삼성전자 RERAM 클러스터 연구과제(3차년도), 삼성전자(주) (2014-2015)
  • 뉴로모픽 소자용 고집적 시냅스 소자 및 집적공정 개발, 재단법인한국연구재단 (2015-2016)
  • DEVELOPMENT OF FUNDAMENTAL TECHNOLOGIES FOR TERA BIT LEVEL 3D RERAM, 한국산업기술평가관리원 (2015-2016)
  • [기술자문]뉴로모픽 반도체소자 기술개발, SK하이닉스(주) (2015-2016)
  • INSULATOR-METAL TRANSITION PHYSICS AND DEVICES, SEMICONDUCTOR RESEARCH CORPORATION (2015-2016)
  • 고압열처리 응용확대 및 초임계 공정을 이용한 차세대 반도체 기술 개발, 주식회사 에이치피에스피 (2015-2017)
  • 100 NSEC의 PROGRAM/ERASE SPEED를 갖는 100 NM 이하의 초저전력 RECONFIGURABLE 반도체 소자 (ATOMIC SWITCH, NEMS 소자) 및 소재 원천 기술개발, 한국산업기술평가관리원 (2015-2016)
  • 자체연구개발과제[2015년 신설], 포항공과대학교 (2015-2031)
  • 100 NSEC의 PROGRAM/ERASE SPEED를 갖는 100 NM 이하의 초저전력 RECONFIGURABLE 반도체 소자 (ATOMIC SWITCH, NEMS 소자) 및 소재 원천 기술개발, (사)한국반도체연구조합 (2015-2016)
  • 단원자 SCALE의 이온제어기반 NANO-ELECTRO-IONIC SWITCH (NEIS) 트랜지스터, 재단법인 삼성미래기술육성재단 (2015-2018)
  • STACK형 저항 메모리를 위한 다양한 저온 SWITCH 비교 연구, 삼성전자(주) (2015-2016)
  • 뉴로모픽 (NEUROMORPHIC) 소자용 고집적 시냅스 소자 및 집적공정 개발, 재단법인한국연구재단 (2016-2017)
  • INSULATOR-METAL TRANSITION PHYSICS AND DEVICES, SEMICONDUCTOR RESEARCH CORPORATION (2016-2017)
  • 4.12089_이월과제, 재단법인한국연구재단 (2016-2017)
  • 100 NSEC의 PROGRAM/ERASE SPEED를 갖는 100 NM 이하의 초저전력 RECONFIGURABLE 반도체 소자 (ATOMIC SWITCH, NEMS 소자) 및 소재 원천 기술개발, 한국산업기술평가관리원 (2016-2017)
  • [민간]100 NSEC의 PROGRAM/ERASE SPEED를 갖는 100 NM 이하의 초저전력 RECONFIGURABLE 반도체 소자 (ATOMIC SWITCH, NEMS 소자) 및 소재 원천 기술개발, (사)한국반도체연구조합 (2016-2017)
  • SYNAPTIC DEVICE FOR NEUROMORPHIC SYSTEM WITH PATTERN RECOGNITION FUNCTION, 한국산업기술평가관리원 (2016-2016)
  • [민간]시냅스 소자 기반 패턴인식 하드웨어 시스템의 시뮬레이션을 통한 소자/회로/아키텍처 플랫폼 개발, (사)한국반도체연구조합 (2016-2017)
  • NEUROMORPHIC PATTERN RECOGNITION HARDWARE SYSTEM WITH RADIATION HARDNESS, 기타기관 (2017-2017)
  • DEVELOPMENT OF HIGH DENSITY SYNAPSE AND INTEGRATION PROCESS FOR NEUROMORPHIC DEVICE, 재단법인한국연구재단 (2017-2018)
  • SYNAPTIC DEVICE FOR NEUROMORPHIC SYSTEM WITH PATTERN RECOGNITION FUNCTION, (사)한국반도체연구조합 (2017-2017)
  • [민간]시냅스 소자 기반 패턴인식 하드웨어 시스템의 시뮬레이션을 통한 소자/회로/아키텍처 플랫폼 개발, (사)한국반도체연구조합 (2017-2017)
  • STACK형 저항 메모리를 위한 다양한 저온 SWITCH 비교 연구(2차년도), 삼성전자(주) (2016-2017)
  • MECHANICAL STRESS에 의한 MOSFET소자 신뢰성 연구, 삼성전자(주) (2017-2018)
  • 금속산화막을 기반으로 한 저항변화메모리 공정개발, 동부문화재단 (2017-2017)
  • 4.13416 이월과제, 재단법인한국연구재단 (2017-2018)
  • (민간)100 NSEC의 PROGRAM/ERASE SPEED를 갖는 100 NM 이하의 초저전력 RECONFIGURABLE 반도체 소자 (ATOMIC SWITCH, NEMS 소자) 및 소재 원천 기술개발, (사)한국반도체연구조합 (2017-2018)
  • DEVELOPMENT OF LOW POWER RECONFIGURABLE IC (ATOMIC SWITCH/NEMS DEVICE) WITH 100NSEC PROGRAM/ERASE SPEED AND SUB-100 NM, 한국산업기술평가관리원 (2017-2018)
  • 단원자 SCALE의 이온제어기반 NANO-ELECTRO-IONIC SWITCH (NEIS) 트랜지스터(2단계), 삼성전자(주) (2017-2019)
  • LOW VOLTAGE THIN FILM SELECTOR RESEARCH, SEMICONDUCTOR RESEARCH CORPORATION (2018-2018)
  • MFS 구조 기반 강유전성 HFO2 트랜지스터 개발(1차년도), 에스케이하이닉스 주식회사 (2018-2020)
  • 저전력 고성능 인공지능 컴퓨팅 소재/소자 개발 분야 자문, 현대엔지비(주) (2018-2018)
  • NEUROMORPHIC PATTERN RECOGNITION HARDWARE SYSTEM WITH REDIATION HARDNESS, 기타기관 (2018-2019)
  • 시냅스 소자 기반 패턴인식 하드웨어 시스템의 시뮬레이션을 통한 소자/회로/아키텍처 플랫폼 개발, 한국산업기술평가관리원 (2018-2018)
  • (민간)시냅스 소자 기반 패턴인식 하드웨어 시스템의 시뮬레이션을 통한 소자/회로/아키텍처 플랫폼 개발, (사)한국반도체연구조합 (2018-2018)
  • 인지가소성 저항변화소재 개발, 한국기계연구원부설재료연구소 (2018-2018)
  • DEVELOPMENT OF SINGLE ATOM-BASED ULTRA LOW POWER UNIFIED DEVICE (2-TERMINAL MEMORY, SWITCH, BATTERY) FOR IOT APPLICATIONS, 재단법인한국연구재단 (2018-2019)
  • 뉴로모픽반도체 기술 자문 (과제잠금, 연구책임자 요구), 삼성전자(주) (2019-2019)
  • LOW VOLTAGE THIN FILM SELECTOR RESEARCH, SEMICONDUCTOR RESEARCH CORPORATION (2019-2019)
  • SYNAPTIC DEVICE FOR NEUROMORPHIC SYSTEM WITH PATTERN RECOGNITION FUNCTION, 한국산업기술평가관리원 (2019-2019)
  • DEVELOPMENT OF SINGLE ATOM-BASED ULTRA LOW POWER UNIFIED DEVICE (2-TERMINAL MEMORY, SWITCH, BATTERY) FOR IOT APPLICATIONS, 재단법인한국연구재단 (2019-2020)
  • 인지가소성 저항변화소재 개발, 한국기계연구원부설재료연구소 (2019-2019)
  • 단원자기반 반도체소자 연구소 부서연구관리비, 포항공대산학협력단 (2019-2020)
  • (민간)시냅스 소자 기반 패턴인식 하드웨어 시스템의 시뮬레이션을 통한 소자/회로/아키텍처 플랫폼 개발, (사)한국반도체연구조합 (2019-2019)

IP

  • 황현상,유인경, 비휘발성 메모리 기능을 갖는 트랜지스터 및 이의 작동 방법, -, PCT/KR2019/0028 (2019)
  • 황현상,곽명훈,박재성, 커널 하드웨어 장치, -, PCT/KR2018/0155 (2018)
  • 황현상,고진원,김용훈,권정대, 3단자 시냅스 소자 및 이의 제조 방법, 한국, 10-2019-0029273 (2018)
  • 유인경,황현상, 인공신경망 프로세서용 활성화 소자, -, PCT/KR2018/0135 (2018)
  • 유인경,황현상, 커패시턴스-기반의 다층 시냅스 소자 및 그의 제조 방법, -, PCT/KR2018/0132 (2018)
  • 황현상,유인경,곽명훈, 크로스-포인트 커패시터 기반의 가중치 소자 및 이를 이용한 뉴럴 네트워크, 한국, 10-2018-0127101 (2018)
  • 유인경,황현상, 강유전체 표면 conductance를 이용하는 linear multilevel synaptic weight, 한국, 10-2018-0149382 (2018)
  • 황현상,박재혁, 절연체-금속 전이 소자 기반의 전계 효과 트랜지스터, 한국, 10-2018-0159373 (2018)
  • 유인경,황현상,오승열, 3차원 수직 교차점 구조의 다층 시냅스 가중치 소자 및 그 제조 방법, 한국, 10-2018-0030166 (2018)
  • 황현상,곽명훈, 멀티 레벨의 컨덕턴스를 가지는 뉴로모픽 시냅스 장치 및 이의 동작 방법, 한국, 10-2018-0061811 (2018)
  • 황현상, 3차원 플래시 메모리 소자의 제조방법, 대만, 107103829 (2018)
  • 황현상, 3차원 플래시 메모리 소자의 제조방법, 중국, 201810107154.9 (2018)
  • 황현상, 반도체 열처리방법, 대만, 107103831 (2018)
  • 황현상, 반도체 열처리방법, 중국, 201810108353.1 (2018)
  • 황현상, 3차원 플래시 메모리 소자의 제조 방법, 대만, 107103828 (2018)
  • 황현상, 3차원 플래시 메모리 소자의 제조 방법, 중국, 201810108234.6 (2018)
  • 유인경,황현상,김재준, 트랜스포즈가 가능한 가중치 셀 및 이의 어레이, 한국, 10-2018-0058581 (2018)
  • 황현상,임석재, 내부 전압 분배층을 포함하는 저항변화 메모리 소자 및 이의 제조방법, 한국, 10-2018-0016322 (2017)
  • 유인경,황현상, 비휘발성 메모리 기능을 갖는 트랜지스터 및 이의 작동 방법, 한국, 10-2018-0028602 (2017)
  • 곽명훈,황현상,박재성, 커널 하드웨어 장치, 한국, 10-2017-0183339 (2017)
  • 유인경,황현상, 수직 크로스-포인트 가중치 소자 및 이의 동작방법, 한국, 10-2017-0109337 (2017)
  • 유인경,황현상, 수직 크로스-포인트 가중치 소자 및 이의 동작방법, 한국, 10-2017-0109337 (2017)
  • 유인경,황현상, 인공신경망 프로세서용 활성화 소자, 한국, 10-2017-0155424 (2017)
  • 유인경,황현상, 커패시턴스-기반의 다층 시냅스 소자 및 그의 제조 방법, 한국, 10-2017-0147298 (2017)
  • 황현상,송정환, 문턱 스위칭 소자, USA, 15/687,962 (2017)
  • 유인경,황현상, 수직형 논리곱 가중치 소자 및 그의 동작 방법, 한국, 10-2017-0124869 (2017)
  • 유인경,황현상, 크로스 포인트 가중치 소자 및 이의 동작방법, 한국, 10-2017-0103428 (2017)
  • 황현상,유종명, 문턱전압이 조절 가능한 트랜지스터, 한국, 10-2017-0103882 (2017)
  • 황현상,유종명, 문턱전압이 조절 가능한 트랜지스터, 한국, 10-2017-0103882 (2017)
  • 우지용,황현상,이동욱, 발화형 뉴런 회로 및 이의 동작 방법, 한국, 10-2017-0081418 (2017)
  • 황현상,문기봉, 가중치 회로 및 그 동작 방법, 한국, 10-2017-0089082 (2017)
  • 이동욱,우지용,황현상, 뉴런회로 및 이를 포함하는 뉴로모픽 시스템, 한국, 10-2017-0090322 (2017)
  • 송정환,황현상, 문턱 스위칭 소자, 한국, 10-2017-0075082 (2017)
  • 황현상,임석재, 저항변화 메모리 소자 및 이의 제조 방법, 한국, 10-2017-0058641 (2017)
  • 황현상,송정환, 저항 변화 메모리 소자 및 그 제조방법, 한국, 10-2015-0150038 (2017)
  • 황현상,송정환, 저항 변화 메모리 소자 및 그 제조방법, 한국, 10-2015-0150038 (2017)
  • 황현상, 3차원 플래시 메모리 소자의 제조 방법, 한국, 10-2017-0015780 (2017)
  • 황현상, 반도체 열처리방법, 한국, 10-2017-0015779 (2017)
  • 황현상, 3차원 플래시 메모리 소자의 제조방법, 한국, 10-2017-0015051 (2017)
  • 황현상,임석재, 선택기능층을 포함하는 저항변화 메모리, 한국, 10-2017-0037128 (2017)
  • 유인경,김창현,황현상, 3단자 비파괴 검출형 강유전체 메모리 및 이의 동작방법, 한국, 10-2017-0095818 (2017)
  • 유인경,황현상, 가중치 소자 및 이의 작동 방법, 한국, 10-2017-0058760 (2017)
  • 황현상,박재성, 저항 변화 메모리 소자 및 이의 제조방법, 한국, 10-2017-0019260 (2017)
  • 유인경,황현상, 다중 레벨 저장용 반도체 소자, 한국, 10-2017-0049709 (2016)
  • 유인경,황현상, 다중 레벨 저장용 반도체 소자, 한국, 10-2017-0049709 (2016)
  • 황현상,성창혁, 저항 변화 메모리 소자, 한국, 10-2017-0018639 (2016)
  • 황현상,임석재, 가파른 기울기의 저항변화를 갖는 원자기반 스위칭 소자 및 이를 포함하는 원자기반 전계효과 트랜지스터, 한국, 10-2016-0155114 (2016)
  • 황현상,우지용, 뉴로모픽 시스템 응용을 위한 시냅스 장치의 동작 조건, 한국, 10-2017-0048469 (2016)
  • 황현상,박재혁, 절연체-금속 전이 소자, 이의 제조방법 및 이를 포함하는 어플리케이션, 한국, 10-2017-0097858 (2016)
  • 황현상,박재혁, 절연체-금속 전이 소자, 이의 제조방법 및 이를 포함하는 어플리케이션, 한국, 10-2017-0097858 (2016)
  • 우지용,황현상, 뉴로모픽 시스템 응용을 위한 시냅스 장치, 이의 제조방법 및 이를 포함한 시냅스 회로 소자, 한국, 10-2016-0155948 (2016)
  • 유인경,황현상,김창현, 다중 레벨의 전하 저장이 가능한 반도체 소자, 한국, 10-2017-0048625 (2016)
  • 황현상,송정환, 스위칭 제어 특성과 가파른 문턱 전압 이하 기울기를 갖는 문턱 스위칭 소자, 이의 제조방법 및 이를 포함하는 금속 산화물 저항 변화 소자, 한국, 10-2016-0139867 (2016)
  • 유인경,황현상, 멀티레벨 데이터 저장이 가능한 비휘발성 강유전체 소자 및 소자의 동작방법, 한국, 10-2017-0009700 (2016)
  • 황현상,구윤모, 오보닉 문턱 스위칭 소자 및 이의 방법, 한국, 10-2017-0032617 (2016)
  • 유인경,황현상,이장식,서순애, 가중치 소자 및 이의 방법, 한국, 10-2016-0124525 (2016)
  • 유인경,황현상,이장식,서순애, 가중치 소자 및 이의 방법, 한국, 10-2016-0124525 (2016)
  • 유인경,황현상,이장식, 불휘발성 강유전체 인버터 및 작동방법, 한국, 10-2016-0124492 (2016)
  • 황현상,송정환, 가파른 문턱 전압 이하 기울기를 가지는 문턱 스위칭 소자 및 이를 포함하는 금속 산화물 저항 변화 소자, 한국, 10-2016-0057446 (2016)
  • 황현상,임석재, 높은 온/오프 저항 비, 낮은 포밍 전압을 구현하기 위한 이중 저항변화 층을 가지는 저항변화 메모리 및 이의 제조방법, 한국, 10-2016-0014003 (2016)
  • 황현상,임석재, 높은 온/오프 저항 비, 낮은 포밍 전압을 구현하기 위한 이중 저항변화 층을 가지는 저항변화 메모리 및 이의 제조방법, 한국, 10-2016-0014003 (2016)
  • 황현상,차의준,문기봉, 부도체-도체 전이현상을 이용한 뉴런 소자를 포함한 고집적 뉴로모픽 시스템 및 고집적 뉴로모픽 회로, 한국, 10-2015-0179836 (2015)
  • 황현상,차의준,문기봉, 부도체-도체 전이현상을 이용한 뉴런 소자를 포함한 고집적 뉴로모픽 시스템 및 고집적 뉴로모픽 회로, 한국, 10-2015-0179836 (2015)
  • 황현상,장만,이상헌,백인규, 저항성 메모리 장치의 제어 방법, 한국, 10-2014-0169181 (2014)
  • 황현상,이승렬,백인규,미샤 사이풀 하크, 저항성 메모리 장치, 한국, 10-2014-0172457 (2014)
  • 황현상,이병근,이보름,이병훈,박상수,전문구, 패턴인식방법과 이를 위한 패턴인식장치, USA, 14/556,716 (2014)
  • 황현상,임석재,이상헌, 다기능 층을 갖는 저항변화 메모리 및 이의 제조방법, 한국, 10-2015-0034215 (2014)
  • 황현상,장준우,정윤하, 금속-절연체 전이 소자를 이용한 신경회로망 형태 분류기 및 형태 분류 방법, 한국, 10-2015-0010432 (2014)
  • 황현상,장준우,정윤하, 금속-절연체 전이 소자를 이용한 신경회로망 형태 분류기 및 형태 분류 방법, 한국, 10-2015-0010432 (2014)
  • 황현상,이대석,이상헌, 뉴로모픽 시스템 응용을 위한 시냅스 소자 및 그 제조방법, 한국, 10-2014-0172860 (2014)
  • 황현상,이대석,이상헌, 뉴로모픽 시스템 응용을 위한 시냅스 소자 및 그 제조방법, 한국, 10-2014-0172860 (2014)
  • 황현상,이대석, 뉴로모픽 시스템 응용을 위한 시냅스 장치, 한국, 10-2014-0167796 (2014)
  • 황현상,이대석, 뉴로모픽 시스템 응용을 위한 시냅스 장치, 한국, 10-2014-0167796 (2014)
  • 황현상, 고압 원자층 증착 방법, 한국, 10-2014-0048675 (2014)
  • 황현상,이대석, 고압 열처리를 이용한 스핀 온 글랫 절연막 형성방법, 한국, 10-2014-0048674 (2014)
  • 황현상,이대석, 고압 열처리를 이용한 스핀 온 글랫 절연막 형성방법, 한국, 10-2014-0048674 (2014)
  • 황현상,이상헌, 다중 동작을 수행하는 전자 소자, 한국, 10-2014-0103196 (2014)
  • 황현상,이상헌, 다중 동작을 수행하는 전자 소자, 한국, 10-2014-0103196 (2014)
  • 황현상,우지용,양민규,김영배, 메모리 소자 및 메모리 셀 어레이, 한국, 10-2014-0012210 (2014)
  • 황현상,우지용, 양방향 스위칭 특성을 갖는 2-단자 스위칭 소자, 이의 제조방법 및 이를 포함하는 저항성 메모리 소자 크로스-포인트 어레이, USA, 14/229,817 (2014)
  • 황현상,우지용, 양방향 스위칭 특성을 갖는 2-단자 스위칭 소자, 이의 제조방법 및 이를 포함하는 저항성 메모리 소자 크로스-포인트 어레이, USA, 14/229,817 (2014)
  • 황현상,장준우,정윤하, 저항변화 메모리를 이용한 신경회로망 형태 분류기 및 형태 분류 방법, 한국, 10-2014-0055231 (2014)
  • 황현상,장준우,정윤하, 저항변화 메모리를 이용한 신경회로망 형태 분류기 및 형태 분류 방법, 한국, 10-2014-0055231 (2014)
  • 황현상,이상헌,베노쉬 아타리 마샬코우베, 저항 변화 메모리 소자, 한국, 10-2014-0024224 (2014)
  • 황현상,이상헌,베노쉬 아타리 마샬코우베, 저항 변화 메모리 소자, 한국, 10-2014-0024224 (2014)
  • 황현상,김영배, 3단자 시냅스 소자 및 그 동작방법, 한국, 10-2013-0128019 (2014)
  • 황현상,박상수,이병훈,이병근,이보름,전문구, 학습을 통한 음성신호 인식방법과 시냅스 특성을 가지는 전자 소자의 응용 방법, 한국, 10-2013-0149989 (2013)
  • 황현상,박상수, 가변저항층을 가지는 RRAM과 이를 포함하며 향상된 시냅스 특성을 가지는 전자 소자, 한국, 10-2013-0149988 (2013)
  • 황현상,박상수, 가변저항층을 가지는 RRAM과 이를 포함하며 향상된 시냅스 특성을 가지는 전자 소자, 한국, 10-2013-0149988 (2013)
  • 황현상,이상헌, 비휘발성 메모리 소자 및 그 제조방법, 한국, 10-2013-0146121 (2013)
  • 황현상,이상헌, 비휘발성 메모리 소자 및 그 제조방법, 한국, 10-2013-0146121 (2013)
  • 황현상,이대석, 금속-절연체 전이현상을 이용한 선택 소자, 및 이를 포함하는 비휘발성 메모리 셀, 한국, 10-2013-0138851 (2013)
  • 황현상,이대석, 금속-절연체 전이현상을 이용한 선택 소자, 및 이를 포함하는 비휘발성 메모리 셀, 한국, 10-2013-0138851 (2013)
  • 황현상,우지용, 양방향 스위칭 특성을 갖는 2-단자 스위칭 소자, 이의 제조방법 및 이를 포함하는 저항성 메모리 소자 크로스-포인트 어레이, 한국, 10-2013-0097868 (2013)
  • 황현상,우지용, 양방향 스위칭 특성을 갖는 2-단자 스위칭 소자, 이의 제조방법 및 이를 포함하는 저항성 메모리 소자 크로스-포인트 어레이, 한국, 10-2013-0097868 (2013)
  • 황현상,박상수,이대석, 시냅스 특성을 가지는 RRAM을 이용한 전자소자, 한국, 10-2013-0016681 (2013)
  • 황현상,이대석,박상수, RRAM과 이를 포함하며 향상된 시냅스 특성을 가지는 전자 소자, 한국, 10-2013-0028170 (2013)
  • 황현상,이대석,박상수, RRAM과 이를 포함하며 향상된 시냅스 특성을 가지는 전자 소자, 한국, 10-2013-0028170 (2013)
  • 황현상,이대석,김성현, 저항 변화 메모리 소자 및 이의 제조방법, 한국, 10-2012-0134266 (2012)
  • 황현상,이대석,김성현, 저항 변화 메모리 소자 및 이의 제조방법, 한국, 10-2012-0134266 (2012)