Spin-valve devices are a key component of a magnetoresistive random access memory. Mr. Woo Youn Kim and Professor Kwang Soo Kim of Department of Chemistry of POSTECH predicted supermagnetoresistance in a graphene nanoribbon device, the article of which has appeared in Nature Nanotech (3, 408-412, 2008). The reported graphene nanoribbon spin-valve device shows extremely large magnetoresistance (ten thousand times larger than that of conventional devices), which promises high speed access, and good sensitivity. The striking enhancement originates from the peculiar symmetry of band structures of ..