DLTS is an effective tool in obtaining information about traps in semiconductors, such as activation energies, capture cross sections and densities of traps. In DLTS measurement, capacitance transient due to the emission of majority carrier from the traps is observed during the pulsed bias between filling bias and some reverse bias. This system consists of a variable-temperature cryostat, a 1 MHz capacitance meter, a pulse generator, and a temperature controller. In a conventional DLTS, packaged devices are mounted on the temperature variable block. Thus, the preparation for the measurement was very time-consuming and the surface modification was nearly impossible. In our system, however, the micro-probe tips are designed to prove directly the metal contact pads. Thus, DLTS spectra can be obtained without packaging, which enables surface preparation to be possible.