PE-CVD system is used to deposit the dielectric layers such as Si3N4 or SiO2 for the purpose of passivation process, etching mask, and the edge termination in power device. This system consists of a RF power generator / controller, vacuum pumping /control system, gas lines, gas control system and thermal heating system. SiH4 and NH3 gases react by plasma energy formed Si3N4 layer. SiO2 was produced with the mixture of SiH4 and N2O gases. With mass flow controller (MFC), reactive and carrier gases were fed into the chamber and the RF power was applied in order to make dielectric layer. This is a very versatile system for the fabrication of various devices.