Rapid Thermal Annealing (RTA) is a term that covers various methods of heating wafers for periods from 100 sec down to a few seconds. Heating is achieved through tens of halogen lamps that deliver optical energy through the all-quartz chamber. With this unit, near atmospheric pressure anneals in Nitrogen, Oxygen or Dry Air can be done to temperatures up to 1100 oC. A thermocouple is available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a SiC-coated graphite. Custom windows based control software has been added to the system and all process parameters are monitored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, and dopant activation. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals.fter making several patterns with an aligner, instrument which can remove PR on the surface of the semiconductor