A Karl Suss MJB 3 contact aligner enables to fabricate photoresist patterns with a line width up to 0.5 μm on thin films of various semiconductors. The mercury lamp of i-line wavelength (365 nm) is used for high-intensity UV source. The size of photo mask used is 4 × 4 or 5 × 5 inch2 and the maximum size of thin film sample for lithography is about 3 × 3 cm2. A photoresist coating system with the maximum spin speed of 8000 rpm is accompanied. CSPL offer a position for a postdoctoral fellow mainly working in the field of the fabrication and characterization of semiconductor device.Requirements: