Radio frequency magnetron sputter deposition is widely used for the growth of insulators such as silicon oxide, aluminum oxide and other oxides where the substrate temperature limits preclude other techniques. The plasma is initiated between the cathode and the anode at pressures in the several mTorr ranges by the application of high voltage.
<Specification>
Base pressure : 1 * 10-6 Torr
Working pressure : 2* 10-3 Torr
Substrate rotation : available (10 rpm)
Target size : 2'' - 1 ea, 4'' - 2 ea
Substrate heating : available ( up to 1200 oC)