교원검색

Profile.
Name	Chang-Ki Baek
Organization	Dept. Convergence IT Engineering
Telephone	054-279-8893
E-mail	baekck@postech.ac.kr
Homepage	http://idea.postech.ac.kr/

Journal Papers

International

Solar Cell Using Hourglass-Shaped Silicon Nanowires for Increased Light-Trapping Path, IEEE JOURNAL OF PHOTOVOLTAICS, , 10, 475-479 (2020)
High-Voltage Drain-Extended FinFET With a High-k Dielectric Field Plate, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 67, 1077-1084 (2020)
Thermal conductivity reduction by scallop shaped surface modulation in silicon nanowires, APPLIED PHYSICS LETTERS, , 116, - (2020)
Disorder Originated Unusual Mobility in Crystalline InGaZnO4, IEEE Electron Device Letters, , 41, 872-875 (2020)
Design Guidelines for High Sensitivity ZnO Nanowire Gas Sensors With Schottky Contact, IEEE SENSORS JOURNAL, , 19, 976-981 (2019)
Whispering gallery modes enhance the near-infrared photoresponse of hourglass-shaped silicon nanowire photodiodes, NATURE ELECTRONICS, , 2, 572-579 (2019)
Weakly Tapered Silicon Nanopillar Resonators with Spatially Well Separated Whispering Gallery Modes for Si-Based Lasers, Acs Applied Nano Materials, , 2, 4852-4858 (2019)
Vertical Silicon Nanowire Thermoelectric Modules with Enhanced Thermoelectric Properties, Nano Letters, , 19, 747-755 (2019)
LaF3 electrolyte-insulator-semiconductor sensor for detecting fluoride ions, Sensors and Actuators, B: Chemical, , 279, 183-188 (2019)
An array of metal oxides nanoscale hetero p-n junctions toward designable and highly-selective gas sensors, SENSORS AND ACTUATORS B-CHEMICAL, , 255, 1663-1670 (2018)
Bandgap Engineering and Strain Effects of Core-Shell Tunneling Field-Effect Transistors, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 65, 277-281 (2018)
Ultrasensitive detection of Ebola matrix protein in a memristor mode, Nano Research, , 11, 1057-1068 (2018)
Electrical Characteristics of Doped Silicon Nanowire Channel Field-Effect Transistor Biosensors, IEEE Sensors Journal ensors, , 17, 667-673 (2017)
Performance and Variations Induced by Single Interface Trap of Nanowire FETs at 7-nm Node, IEEE Transaction on Electron Devices, , 64, 339-345 (2017)
Core-Shell homojunction silicon vertical nanowire tunneling field-effect transistors, Scientific Reports, , , - (2017)
Investigation of DC Characteristics in Polysilicon Nanowire Tunneling Field-Effect Transistors, Journal of Nanoscience and Nanotechnology, , 17, 3071-3076 (2017)
Nanowire sensors monitor bacterial growth kinetics and response to antibiotics, LAB ON A CHIP, , 17, 4283-4293 (2017)
Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors, Nano Letters, , 17, 6727-6734 (2017)
Optical Characteristics of Silicon-Based Asymmetric Vertical Nanowire Photodetectors, IEEE Transactions on Electron Devices, , 64, 2261-2266 (2017)
Optimization of Signal to Noise Ratio in Silicon Nanowire ISFET Sensors, IEEE Sensors Journal, , 17, 2792-2796 (2017)
Polysilicon near-infrared photodetector with performance comparable to crystalline silicon devices, OPTICS EXPRESS, , 25, 32910-32918 (2017)
Variability study of Si nanowire FETs with different junction gradients, AIP advances, , 6, - (2016)
Effects of single grain boundary and random interface traps on electrical variations of sub-30 nm polysilicon nanowire structures, MICROELECTRONIC ENGINEERING, , 149, 113-116 (2016)
Process-Induced Variations of 10-nm Node Bulk nFinFETs Considering Middle-of-Line Parasitics, IEEE Transactions on Electron Devices, , 63, 3399-3405 (2016)
Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors, APPLIED PHYSICS LETTERS, , 106, - (2015)
Junction Design Strategy for Si Bulk FinFETs for System-on-Chip Applications Down to the 7-nm Node, IEEE ELECTRON DEVICE LETTERS, , 36, 994-996 (2015)
Three-dimensional simulation of threshold voltage variations due to an oblique single grain boundary in sub-40nm polysilicon nanowire FETs, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, , 30, - (2015)
Chemical Gated Field Effect Transistor by Hybrid Integration of One-Dimensional Silicon Nanowire and Two-Dimensional Tin Oxide Thin Film for Low Power Gas Sensor, ACS APPLIED MATERIALS & INTERFACES, , 7, 21263-21269 (2015)
Investigation of RC Parasitics Considering Middle-of-the-Line in Si-Bulk FinFETs for Sub-14-nm Node Logic Applications, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 62, 3441-3444 (2015)
High efficiency silicon solar cell based on asymmetric nanowire, SCIENTIFIC REPORTS, , 5, - (2015)
Silicon Nanowire Biologically Sensitive Field Effect Transistors: Electrical Characteristics and Applications, Journal of Nanoscience and Nanotechnology, , 14, 273-287 (2014)
Optimized operation of silicon nanowire field effect transistor sensors, NANOTECHNOLOGY, , 25, - (2014)
Threshold Voltage Variations Due to Oblique Single Grain Boundary in Sub-50-nm Polysilicon Channel, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 61, 2705-2710 (2014)
Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, , 16, 22687-22693 (2014)
Vertical gate-all-around junctionless nanowire transistors with asymmetric diameters and underlap lengths, APPLIED PHYSICS LETTERS, , 105, - (2014)
Thermally Phase-Transformed In2Se3 Nanowires for Highly Sensitive Photodetectors, SMALL, , 10, 3795-3802 (2014)
Investigation of Low-Frequency Noise in p-type Nanowire FETs: Effect of Switched Biasing Condition and Embedded SiGe Layer, IEEE ELECTRON DEVICE LETTERS, , 35, 702-704 (2014)
Universal relaxation characteristic of interface trap under FN and NBTI stress in pMOSFET device, ELECTRONICS LETTERS, , 50, 1877-U245 (2014)
Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation, Solid-State Electronics, , 80, 10-13 (2013)
Analytic Model of S/D Series Resistance in Trigate FinFETs with Polygonal Epitaxy, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 60, 1302-1309 (2013)
Investigation of the electrical stability of Si-nanowire biologically sensitive field-effect transistors with embedded Ag/AgCl pseudo reference electrode, RSC Advances, , 3, 7963-7969 (2013)
Simple Source/Drain Series Resistance Extraction Method Optimized for Nanowire, IEEE ELECTRON DEVICE LETTERS, , 34, 828-830 (2013)
Improved Electrical Characteristics of Honeycomb-Nanowire ISFETs, IEEE ELECTRON DEVICE LETTERS, , 34, 1059-1061 (2013)
Study on a Scaling Length Model for Tapered Tri-gate FinFET based on 3-D Simulation and Analytical Analysis, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 60, 2721-2727 (2013)
Investigation of electromigration in In2Se3 nanowire for phase change memory devices, APPLIED PHYSICS LETTERS, , 103, 233504-1-233504-4 (2013)
Electrical characteristics of 20-nm junctionless Si nanowire transistors, Solid-State Electronics, , 73, 7-10 (2012)
Optical and electrical characteristics of asymmetric nanowire solar cells, JOURNAL OF APPLIED PHYSICS, , 111, 73102- (2012)
Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration, JOURNAL OF APPLIED PHYSICS, , 112, - (2012)
Device Design Guidelines for Nanoscale FinFETs in RF/Analog Applications, IEEE ELECTRON DEVICE LETTERS, , 33, 1234-1236 (2012)
Characterization of Channel Diameter Dependent Low Frequency Noise in Silicon Nanowire Field Effect Transistors, IEEE ELECTRON DEVICE LETTERS, , 33, 1348-1350 (2012)
Characterization and Modeling of 1/f Noise in Si-nanowire FETs _ Effects of Cylindrical Geometry and Different Processing of Oxides, IEEE TRANSACTIONS ON NANOTECHNOLOGY, , 10, 417-423 (2011)
C-V Characteristics in Undoped Gate-All-Around Nanowire FET Array, IEEE ELECTRON DEVICE LETTERS, , 32, 116-118 (2011)
An Analysis of the Field Dependence of Interface Trap Generation under Negative Bias Temperature Instability Stress using Wentzel- Kramers Brillouin with Density Gradient Method, Japanese Journal of Applied Physics, , 50, - (2011)
A 3-D Statistical Simulation Study of Mobility Fluctuations in MOSFET Induced by Discrete Trapped Charges in SiO2 Layer, IEEE TRANSACTIONS ON NANOTECHNOLOGY, , 10, 699-705 (2011)
Interfacial-Layer-Driven Dielectric Degradation and Breakdown of HfSiON/SiON Gate Dielectric nMOSFETs, IEEE ELECTRON DEVICE LETTERS, , 32, 1319-1321 (2011)
Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics, Analyst, , 136, 5012-5016 (2011)
Comprehensive Study of Quasi-Ballistic Transport in High-k/Metal Gate nMOSFETs, IEEE ELECTRON DEVICE LETTERS, , 32, 1474-1476 (2011)
New Investigation of Hot Carrier Degradation on RF Small-Signal Parameter and Performance in High-k/Metal Gate nMOSFETs, IEEE ELECTRON DEVICE LETTERS, , 32, 1668-1670 (2011)
Characteristics of the Series Resistance Extracted from Si-Nanowire FETs using the Y-function Technique, IEEE TRANSACTIONS ON NANOTECHNOLOGY, , 9, 212-217 (2010)
Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-type Si-NWFETs Using the Y-function Technique, JAPANESE JOURNAL OF APPLIED PHYSICS, , 49, 4DN06-01-4DN06-05 (2010)
Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nano-Scale MOSFET Applications, IEEE TRANSACTIONS ON NANOTECHNOLOGY, , 8, 654-658 (2009)
A Comparative Study of the DRAM Leakage Mechanism for Planar and Recessed Channel MOSFETs, SOLID-STATE ELECTRONICS, , 53, 998-1000 (2009)
Three-dimensional Simulation of Dopant Fluctuation Induced Threshold Voltage Dispersion in Non-planar MOS Structures Targeting Flash EEPROM Transistors, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 55, 1456-1463 (2008)
A Proposal on an Optimized Device Structure With Experimental Studies on Recent Devices for the DRAM Cell Transistor, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 54, 3325-3335 (2007)
Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage Distributions in Flash Memory Cells, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 53, 3012-3019 (2006)
Reliable Extraction of Cycling Induced Interface States Implementing Realistic P/E Stresses in Reference Cell: Comparison with Flash Memory Cell, IEEE ELECTRON DEVICE LETTERS, , 27, 169-171 (2006)
Design Technique for Ramped Gate Soft-Programming in Over-Erased NOR Type Flash EEPROM Cells, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, , 44, L578-L580 (2005)
Simple Experimental Determination of the Spread of Trapped Hot Holes Injected in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Cells: Optimized Erase and Cell Shrinkage, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, , 43, L1611-L1613 (2004)
Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell: Effects of Localized Electron Trapping, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, , 43, L1581-L1583 (2004)
High Speed, Low Power Programming in 0.17mum Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, , 43, L224-L226 (2004)

Domestic Journal Papers

General Journal Papers

Conference Proceedings

Interface Engineering to Enhance Photoresponse of Core-Shell Silicon Nanowire Photodetectors, -, 0, 0, - (2019)
Thermal Conductivity of Rough Silicon Nanowires with Silicide Layer, -, 0, 0, - (2019)
Sensitivity Optimization of Silicon Nanowire ISFET Sensor for Detecting Fluoride Ions, -, 0, 0, - (2019)
The F− Sensitivity Enhancement of SiNW ISFET with Poly-LaF3 Sensing Membrane, -, 0, 0, - (2019)
Highly fluoride-sensitive electrolyte-insulator-semiconductor sensor with poly LaF3 sensing membrane, -, 0, 0, - (2019)
Optimization of Silicon Nanowire ISFET Sensor for Sensitive Detection of Fluoride Ion, -, 0, 0, - (2019)
Design Optimization of Silicon Single Photon Avalanche Diode with for High Photon Detection and Low Crosstalk Probabilities, -, 0, 0, - (2019)
Structural and Sensing Characteristics of Lanthanum Fluoride Membrane for Fluoride ion Sensor, -, 0, 0, - (2019)
Silicon Nanowire based Resonators for Increasing Near-infrared Light Absorption, -, 0, 0, - (2019)
Photoluminescence Characteristics of Silicon Nanopillar Structures, -, 0, 0, - (2018)
EIS sensor for fluoride ion detection based on LaF3 film, -, 0, 0, - (2018)
An array of metal oxides nanoscale hetero p-n junctions toward designable and highly-selective gas sensors, 2017 MRS Fall meeting & Exhibit, 0, 0, - (2017)
Gate controlled memristor for Ebola biosensing, -, 0, 0, - (2017)
Noise Characteristics of Silicon Nanowire ISFET Sensors with different channel doping concentration, NanoBioSensors, 0, 0, - (2017)
Silicon Nanowire Based Thermoelectric Device for Energy Harvesting, -, 0, 0, - (2017)
Gas sensitivity analysis of single ZnO nanowire gas sensor having different defect density, dimension and material properties, NANO KOREA 2017, 0, 0, - (2017)
Silicon-based Tunneling Field-Effect Transistors for Ultra-low Power Applications, -, 0, 0, - (2017)
Silicon-based near infrared photodetector with high responsivity, -, 0, 0, - (2017)
The investigation of the responsivity on silicon photodetector depend on deposition technique, -, 0, 0, - (2017)
Gas sensitivity variation with different defect density and dimensions in single ZnO nanowire gas sensor, -, 0, 0, - (2017)
Differential 3w method for measuring thermal conductivity of silicon nanowire, -, 0, 0, - (2017)
DC characteristics in polysilicon nanowire tunneling field-effect transistors, -, 0, 0, - (2017)
도핑농도에 따른 나노선 ISFET 센서의 잡음 특성, 2016 대한전자공학회 하계학술대회 논문집, 0, 0, - (2016)

Invited Talk or Presentations

Metal ion-doped sol-gel film for emulating synaptic activity and short-term non-volatile memory, 26th IEEE International Conference on Electronics, Circuits and Systems, 0, 0, - (2019)
Silicon-based Biochemical Sensor for Point-of-Care Application, The 13th IEEE Int’l Conference on Nano/Molecular Medicine & Engineering, 0, 0, - (2019)
Photoluminescence Characteristics of Silicon Nanopillar Structures, -, 0, 0, - (2018)
EIS sensor for fluoride ion detection based on LaF3 film, -, 0, 0, - (2018)
An array of metal oxides nanoscale hetero p-n junctions toward designable and highly-selective gas sensors, 2017 MRS Fall meeting & Exhibit, 0, 0, - (2017)
Gate controlled memristor for Ebola biosensing, -, 0, 0, - (2017)
Noise Characteristics of Silicon Nanowire ISFET Sensors with different channel doping concentration, NanoBioSensors, 0, 0, - (2017)
Silicon Nanowire Based Thermoelectric Device for Energy Harvesting, -, 0, 0, - (2017)
Gas sensitivity analysis of single ZnO nanowire gas sensor having different defect density, dimension and material properties, NANO KOREA 2017, 0, 0, - (2017)
Silicon-based Tunneling Field-Effect Transistors for Ultra-low Power Applications, -, 0, 0, - (2017)
Silicon-based near infrared photodetector with high responsivity, -, 0, 0, - (2017)
The investigation of the responsivity on silicon photodetector depend on deposition technique, -, 0, 0, - (2017)
Gas sensitivity variation with different defect density and dimensions in single ZnO nanowire gas sensor, -, 0, 0, - (2017)
Differential 3w method for measuring thermal conductivity of silicon nanowire, -, 0, 0, - (2017)
DC characteristics in polysilicon nanowire tunneling field-effect transistors, -, 0, 0, - (2017)
Energy and Sensor Applications based on Silicon Nanotechnology, ., 0, 0, - (2016)
Simulation and characterization of electronic and photonic devices using silicon nanowire structure, ., 0, 0, - (2016)
Honeycomb Nanowire Field Effect Transistor Sensor and Its Applicaiotns, ., 0, 0, - (2015)
The Statistical Distribution of Electrical Characteristics with Random Grain Boundary in Vertical NAND Unit Cells, ., 0, 0, - (2015)
Various Heterojunction Single Gate Tunneling FETs with Graded Channel Doping in Sub-40 nm Channels, ., 0, 0, - (2015)
The Variability due to Random Discrete Dopant and Grain Boundaryin 3D NAND Unit Cell, ., 0, 0, - (2014)
The Temperature Dependence of Threshold Voltage Variations due to Oblique Sing Grain Boundary in 3D NAND unit Cells, ., 0, 0, - (2014)
Noise Consideration for Cancer Marker Detection Using Nanowire Sensors, ., 0, 0, - (2014)
3D Simulation of Threshold Voltage Variations Due to Random Grain Boundary and Discrete Dopants in Sub-20 nm Gate-All-Around Poly-SiTransistor, ., 0, 0, - (2014)
Silicon Nanowire and its Application, ., 0, 0, - (2013)
Characterization of Low Frequency Noise in Nanowire FETs Considering Variability and Quantum Effects, ., 0, 0, - (2013)
Characterization of Silicon Nanowire Biosensors and Solar Cells, ., 0, 0, - (2012)
Modeling and Analysis of the Parasitic Series Resistance in Raised Source/Drain FinFETs with Polygonal Epitaxy, ., 0, 0, - (2012)
An Improved 3D Monte Carlo Simulation of Reaction Diffusion Model for Accurate Prediction of the NBTI Stress/Relaxation, ., 0, 0, - (2012)
Determination of Operation Region in Silicon-Nanowire BioFETs to Maximize Signal-to-Noise Ratio, ., 0, 0, - (2012)
Intrinsic Reliability Improvement of SiGe Quantum Well pMOSFETs, ., 0, 0, - (2012)
Si Thin Film Solar Cell with Asymmetric P-N Junction, ., 0, 0, - (2012)
Analysis of Bottom Channel Effect in Silicon Nanowire FET based on Bulk-Silicon: Reduction of Parasitic Capacitance caused by SiGe layer, ., 0, 0, - (2011)
Fabrication and Characterization of Gate-All-Around Silicon Nanowire Field Effect Transistors, ., 0, 0, - (2011)
Analysis of Parasitic Bottom Capacitance in n- and p-type Si-Nanowire Field Effect Transistors on Bulk, ., 0, 0, - (2011)
Comparative study of fabricated junctionless and inversion-mode nanowire FETs, ., 0, 0, - (2011)
pH Sensing and Noise Characteristics of Si Nanowire Ion-Sensitive Field Effect Transistors, ., 0, 0, - (2011)
Universality in the Interface Trap Relaxation of NBTI and FN Stress: Measurement by Subthreshold Slope Method on nMOSFET and Its Modeling, ., 0, 0, - (2011)
Characteristics and modeling of Si-nanowire FETs, ., 0, 0, - (2010)
Comparative study of C-V characteristics in Si-NWFET and MOSFET, ., 0, 0, - (2010)
C-V Characteristics and Analysis of Undoped Gate-All-Around Nanowire FET Array, ., 0, 0, - (2010)
3D Simulation of NBTI in pMOSFET’s Including Discrete Interface and Oxide Traps Generation, ., 0, 0, - (2010)
Accurate Extraction of Volume Trap Density from Si-Nanowire FET using the Newly Developed Cylindrical Coordinate Based 1/f Noise Model, ., 0, 0, - (2010)

Books

Research Activities

산업용 폐열 회수를 위한 열전발전 시스템 개발, 미래창조과학부 (2015-2015)
고성능 모바일 수질 센서 시스템 기술 개발, 포스코홀딩스(주) (2015-2016)
HONEYCOMB 나노공정기술 및 전극기술개발 공동연구지원, 포항공대산학협력단 (2015-2016)
기술료 연구개발재투자과제, 포항공대산학협력단 (2016-2016)
10나노급 차세대 실리콘 나노선 THYRISTOR RAM개발, 삼성전자(주) (2017-2018)
스마트 산업에너지 ICT융합 컨소시엄, 정보통신산업진흥원 (2017-2018)
DEVELOPMENT OF HIGH SENSITIVE AND LOW LUMINANCE NEAR INFRARED CORE SENSOR TECHNOLOGY FOR AUTONOMOUS VEHICLES, 재단법인한국연구재단 (2018-2018)
Smart Industrial Energy ICT Convergence Consortium, 정보통신산업진흥원 (2018-2019)
스마트 산업에너지 ICT융합 컨소시엄, 정보통신산업진흥원 (2018-2019)
연구개발과제[2015년 신설], 포항공과대학교 (2018-2027)
10나노급 차세대 실리콘 나노선 THYRISTOR RAM개발, 삼성전자(주) (2018-2019)
높은 전류밀도 특성과 RD(ON) 감소를 위한 WBG 전력반도체 제조기술개발, 중소기업기술정보진흥원 (2018-2019)
4.14976_이자과제, 정보통신산업진흥원 (2017-2018)
학생인건비통합관리과제, 포항공대산학협력단 (2019-2040)
차세대 10 나노급 실리콘 수직 나노선 CAPACITOR-LESS DRAM 개발, 삼성전자(주) (2019-2020)
높은 전류밀도 특성과 RD(ON) 감소를 위한 WBG 전력반도체 제조기술개발, 중소기업기술정보진흥원 (2019-2020)
4.16896_이월과제, 중소기업기술정보진흥원 (2019-2020)
4.16487_이자과제, 정보통신산업진흥원 (2018-2019)
DEVELOPMENT OF HIGH EFFICIENCY SILICON NANOWIRE THERMOELECTRIC COOLING DEVICE USING NOVEL STRUCTURE, 재단법인한국연구재단 (2020-2021)
저잡음 SOURCE FOLLOWER TRANSISTOR, 삼성전자(주) (2020-2021)
DEVELOPMENT OF HIGH EFFICIENCY SILICON NANOWIRE THERMOELECTRIC COOLING DEVICE USING NOVEL STRUCTURE, 재단법인한국연구재단 (2021-2022)
4.0019525_이월과제, 재단법인한국연구재단 (2021-2022)
저잡음 SOURCE FOLLOWER TRANSISTOR, 삼성전자(주) (2022-2022)
저잡음 SOURCE FOLLOWER TRANSISTOR, 삼성전자(주) (2023-2024)
실리콘 반도체 기반 고감도 저전력 가스센서 연구회, 대∙중소기업∙농어업협력재단 (2023-2023)
글로벌 R&D 투자・지원 방향 조사 및 분석 용역, 한국과학기술연구원 (2023-2023)
실리콘 반도체 기반 고감도 근적외선 검출 센서 기술연구회, 대∙중소기업∙농어업협력재단 (2023-2023)

IP

백창기,김향우,오경환, 이중 물질 게이트와 고유전율 필드 플레이트를 구비한 드레인 확장형 전계 효과 트랜지스터 및 이의 구동 방법, 한국, 10-2023-0054972 (2023)
공병돈,윤석현,백창기,조현수,이승호,서경민, 표면탄성파 장치용 기판 및 이를 포함하는 표면탄성파 장치, USA, 18/254,131 (2023)
백창기,김향우,김이준, 축적 및 발화 뉴런 회로 및 그 구동방법, 한국, 10-2023-0027658 (2022)
백창기,김향우,김가영,공병돈, 커패시터리스 메모리 소자 및 그 구동 방법, 한국, 10-2022-0038014 (2022)
공병돈,윤석현,백창기,조현수,이승호,서경민, 표면탄성파 장치용 기판 및 이를 포함하는 표면탄성파 장치, -, PCT/KR2021/0169 (2021)
공병돈,윤석현,서경민,이승호,백창기, 표면탄성파 장치용 기판 및 이를 포함하는 표면탄성파 장치, 한국, 10-2021-0117313 (2021)
백창기,공병돈,김향우,김가영, 이중 PN 접합을 포함하는 메모리 소자 및 그 구동방법, 및 이중 PN 접합과 제어 게이트를 포함하는 커패시터리스 메모리 소자 및 그 구동방법, 대만, 110127294 (2021)
백창기,공병돈,김향우,김가영, 이중 PN 접합을 포함하는 메모리 소자 및 그 구동방법, 및 이중 PN 접합과 제어 게이트를 포함하는 커패시터리스 메모리 소자 및 그 구동방법, 중국, 202110829499.7 (2021)
백창기,공병돈,김향우,김가영, 이중 PN 접합을 포함하는 메모리 소자 및 그 구동방법, 및 이중 PN 접합과 제어 게이트를 포함하는 커패시터리스 메모리 소자 및 그 구동방법, USA, 17/354,910 (2021)
백창기,공병돈,김향우,김가영, 이중 PN 접합을 포함하는 메모리 소자 및 그 구동방법, 및 이중 PN 접합과 제어 게이트를 포함하는 커패시터리스 메모리 소자 및 그 구동방법, USA, 17/354,910 (2021)
백창기,김향우,김가영,공병돈, 이중 PN 접합과 제어 게이트를 포함하는 커패시터리스 메모리 소자 및 그 구동방법, 한국, 10-2021-0070651 (2021)
공병돈,서경민,백창기,조현수,이승호,윤석현, 표면탄성파 장치용 기판 및 이를 포함하는 표면탄성파 장치, 한국, 10-2020-0157468 (2020)
백창기,공병돈,김향우,김가영, 이중 PN 접합을 포함하는 메모리 소자 및 그 구동방법, 한국, 10-2020-0093129 (2020)
백창기,조현수,김향우,김가영,공병돈, 쇼트키 접합을 포함하는 메모리 소자 및 그 구동방법, 한국, 10-2020-0048140 (2020)
백창기,공병돈,조현수,김향우,김가영, 오믹 접합과 쇼트키 접합을 이용하는 메모리 및 이의 제조방법, 한국, 10-2020-0014510 (2020)
백창기,조현수,공병돈,김향우,김가영, 이중 쇼트키 접합을 이용하는 메모리 및 이의 제조 방법, 한국, 10-2020-0014513 (2020)
백창기,조현수,공병돈,김향우, 고 유전율 필드 플레이트를 구비한 드레인 확장형 핀펫 및 이의 제조방법, 한국, 10-2020-0017075 (2020)
백창기,조현수,공병돈,김향우, 고 유전율 필드 플레이트를 구비한 드레인 확장형 핀펫 및 이의 제조방법, 한국, 10-2020-0017075 (2020)
백창기,송영운, 조향 및 자세 제어가 가능한 이륜차 로봇 및 이의 제어 방법, 한국, 10-2020-0007468 (2019)
백창기,송영운, 조향 및 자세 제어가 가능한 이륜차 로봇 및 이의 제어 방법, 한국, 10-2020-0007468 (2019)
백창기,조현수,이승호,윤솔,김가영, 3차원 적층 구조의 나노선을 구비한 나노선 열전소자 및 이의 제조방법, 한국, 10-2019-0099808 (2019)
김기현,백창기,윤솔, 이중 흡수층을 갖는 수직 나노선 광검출기 및 그 제조방법, 한국, 10-2019-0081110 (2019)
백창기,김기현,윤솔, 감응도가 향상된 다결정실리콘층을 포함하는 광검출기 및 이의 제조방법, 한국, 10-2018-0140535 (2018)
김기현,백창기,조현수, 고감도의 다결정 란탄 트리플루오라이드 박막의 제조방법, 이에 의해 제조된 고감도의 다결정 란탄 트리플루오라이드 박막 및 이를 포함하는 센서, 한국, 10-2018-0139254 (2018)
백창기,김기현,조현수, 고감도의 다결정 란탄 트리플루오라이드 박막의 제조방법, 이에 의해 제조된 고감도의 다결정 란탄 트리플루오라이드 박막 및 이를 포함하는 센서, 한국, 10-2018-0139254 (2018)
김기현,백창기,이승호, 스캘럽 구조를 가지는 수직 나노선 어레이를 포함하는 열전소자 및 이의 제조방법, 한국, 10-2018-0131668 (2018)
백창기,이승호,김가영,유형석,조현수, 스캘럽 구조를 가지는 수직 나노선 어레이를 포함하는 열전소자 및 이의 제조방법, 한국, 10-2018-0131668 (2018)
백창기,김기현,이승호, 실리사이드층을 포함하는 수직 나노선을 이용한 열전소자 및 이의 제조 방법, USA, 16/186,844 (2018)
김기현,백창기,이승호, 실리사이드층을 포함하는 수직 나노선을 이용한 열전소자 및 이의 제조 방법, 한국, 10-2017-0153007 (2017)
백창기,김기현,이승호, 실리사이드층을 포함하는 수직 나노선을 이용한 열전소자 및 이의 제조 방법, 한국, 10-2017-0153007 (2017)
백창기,김기현,서명해, 사이리스터 기반의 크로스 포인트 메모리 및 이의 제조방법, 한국, 10-2017-0093974 (2017)
윤준식,백창기,김기현,서명해, 수직 나노선 터널링 전계효과 트랜지스터 및 이의 제조방법, 한국, 10-2016-0177655 (2016)
백창기,김기현,윤솔,서명해, 수직 나노선 광검출기 및 이의 제조방법, 한국, 10-2016-0125995 (2016)
김기현,백창기,윤솔,서명해, 비대칭 수직 나노선 광검출기 및 이의 제조방법, 한국, 10-2016-0125995 (2016)
백창기,임태욱,박병규,김재준, 세포 감별 계수기 및 세포 감별 계수 방법, 한국, 10-2015-0154634 (2015)
임태욱,박병규,백창기,김재준, 세포 감별 계수기 및 세포 감별 계수 방법, 한국, 10-2015-0154634 (2015)
이정수,정윤하,임태욱,김기현,김성호,백창기, 3차원 적층 구조의 나노선을 구비한 나노선 전계효과 센서, USA, 14/648,969 (2015)
이정수,정윤하,임태욱,김기현,김성호,백창기, 3차원 적층 구조의 나노선을 구비한 나노선 전계효과 센서, USA, 14/648,969 (2015)
백창기,김기현,이승호, 비대칭 수직 나노선 어레이를 이용한 열전소자 및 이의 제조방법, 한국, 10-2015-0127219 (2015)
김기현,백창기,이승호, 비대칭 수직 나노선 어레이를 이용한 열전소자 및 이의 제조방법, 한국, 10-2015-0127219 (2015)
임태욱,김재준,백창기, 전자 소자, USA, 14/751,290 (2015)
백창기,고명동,임태욱, 나노선 전계효과 트랜지스터 및 이의 제조방법, USA, 14/385,450 (2014)
백창기,고명동,임태욱, 나노선 전계효과 트랜지스터 및 이의 제조방법, USA, 14/385,450 (2014)
백창기,고명동,정윤하,임태욱,박수영,최성욱, 태양전지 및 이의 제조방법, 중국, 201280049982.2 (2014)
백창기,고명동,정윤하,임태욱,박수영,최성욱, 태양전지 및 이의 제조방법, 중국, 201280049982.2 (2014)
백창기,고명동,정윤하,임태욱,박수영,최성욱, 태양전지 및 이의 제조방법, 중국, 추후통지 (2014)
정윤하,고명동,백창기,임태욱,박수영,최성욱, 태양전지 및 이의 제조방법, 일본, 2014-527062 (2014)
백창기,고명동,정윤하,임태욱,박수영,최성욱, 태양전지 및 이의 제조방법, 일본, 추후통지 (2014)
정윤하,고명동,백창기,임태욱,박수영,최성욱, 태양전지 및 이의 제조방법, 일본, 2014-527062 (2014)
백창기,고명동,정윤하,임태욱,박수영,최성욱, 태양전지 및 이의 제조방법, USA, 14/239,693 (2014)
백창기,고명동,정윤하,임태욱,박수영,최성욱, 태양전지 및 이의 제조방법, USA, 14/239,693 (2014)
백창기,고명동,정윤하,임태욱,박수영,최성욱, 태양전지 및 이의 제조방법, EP, 12825711.0 (2014)
임태욱,김재준,백창기, 전자 소자, 한국, 10-2014-0080076 (2014)
이정수,정윤하,임태욱,김기현,김성호,백창기, 3차원 적층 구조의 나노선을 구비한 나노선 전계효과 센서, -, PCT/KR2013/0106 (2013)
이정수,김성호,임태욱,김기현,정윤하,백창기, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, 중국, 201280018389.1 (2013)
이정수,김성호,임태욱,김기현,정윤하,백창기, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, 중국, 201280018389.1 (2013)
이정수,김성호,임태욱,김기현,정윤하,백창기, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, USA, 14/111,727 (2013)
이정수,김성호,임태욱,김기현,정윤하,백창기, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, USA, 14/111,727 (2013)
백창기,고명동,임태욱, 나노선 전계효과 트랜지스터 및 이의 제조방법, -, PCT/KR2013/0019 (2013)
백창기,임태욱,고명동, 나노선 전계효과 트랜지스터 및 이의 제조방법, 한국, 10-2012-0077624 (2013)
백창기,고명동,정윤하,임태욱,박수영,최성욱, 태양전지 및 이의 제조방법, -, PCT/KR2012/0065 (2012)
백창기,임태욱,고명동, 비대칭형 채널 구조 및 소스 드레인의 불순물 농도가 상이한 나노선 전계효과 트랜지스터, 한국, 10-2012-0025726 (2012)
이정수,임태욱,백창기,김성호,김기현,정윤하, 3차원 적층 구조의 나노선을 구비한 나노선 전계효과 센서, 한국, 10-2012-0140109 (2012)
이정수,임태욱,백창기,김성호,김기현,정윤하, 3차원 적층 구조의 나노선을 구비한 나노선 전계효과 센서, 한국, 10-2012-0140109 (2012)
이정수,김성호,임태욱,김기현,정윤하,백창기, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, -, PCT/KR2012/0019 (2012)
백창기,임태욱,고명동,정윤하, 태양전지 및 이의 제조방법, 한국, 10-2011-0083105 (2011)
이정수,임태욱,정윤하,김성호,김기현,백창기, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, 한국, 10-2011-0034860 (2011)