Research

International

• Efficient solardriven hydrogen peroxide production enabled by a perovskite electrochemical device integrated with a cobaltbased chiral catalyst, Energy Environmental Science, , 19, 312-326 (2026 )
• TemplateGuided Nitridation of Epitaxial Cr Thin Films into Oriented CrN, Crystal Growth Design, , 26, 2379-2386 (2026 )
• Highentropy spinel oxide Synthesis and photoresponsivity of Mn068 Cr08 Rh064 Co087 O4, Journal of Alloys and Compounds, , 1010, - (2025 )
• Waferscale AAstacked hexagonal boron nitride grown on a GaN substrate, Nature Materials, , 24, - (2025 )
• The heterostructure of hexagonal boron nitride with wurtzite IIInitrides for optoelectronic and electronic applications, Journal of Applied Physics, , 137, - (2025 )
• Quantum emitters based on hexagonal boron nitride for nextgeneration quantum technology, Progress in Quantum Electronics, , 102, - (2025 )
• Analog Switching in Hexagonal Boron Nitride Memristors via Multiple NanoFilaments Confinement, Small, , 21, - (2025 )
• Stabilized Co SingleAtom Catalyst via Ion Implantation for Efficient Hydrogen Production, Small, , 21, - (2025 )
• TiO2 Nanohelices Decorated with Homogeneous AuCore PdShell Nanocatalysts for Selective Toluene Gas Detection, Small, , 21, - (2025 )
• HighEntropy Synthesis of (Cr07Co02Rh01)VO4 Nanospheres with Improved VisibleLight Photoresponse, Crystal Growth Design, , 25, 6954-6962 (2025 )
• Metalorganic chemical vapor deposition of hexagonal boron nitride from highquality growth to functional engineering, 2D Materials, , 12, - (2025 )
• SelfExfoliation in Quasivan der Waals Epitaxy of IIINitrides on Hexagonal Boron Nitride, ACS Applied Electronic Materials, , 7, 9380-9388 (2025 )
• Demonstration of GaNBased HEMTs Using Extremely Thin hBN Passivation Layer and Air Spacer for the RF Performance Improvement, Advanced Electronic Materials, , 11, - (2025 )
• Investigating contact resistance between WOx and metal electrodes in ECRAMs via interface analysis, Scientific Reports, , 15, - (2025 )
• HighPerformance Ceramic Catalyst Filters with Textured Waveguides for Efficient Removal of Volatile Organic Compounds, Advanced Optical Materials, , 12, - (2024 )
• Attojoule Hexagonal Boron NitrideBased Memristor for HighPerformance Neuromorphic Computing, Small, , 20, - (2024 )
• A MOFderived pyrrolic Nstabilized Ni single atom catalyst for selective electrochemical reduction of CO2 to CO at high current density, Journal of Materials Chemistry A, , 12, 11090-11100 (2024 )
• Development of finLEDs for nextgeneration inorganic displays using faceselective dielectrophoretic assembly, Nature Communications, , 15, - (2024 )
• Quantitative Analysis and Characterization of Sidewall Defects in InGaNBased Blue MicroLEDs, ACS Applied Electronic Materials, , 6, 8377-8383 (2024 )
• Activating NiO nanorods array via nitrogen ion implantation for enhanced alkaline hydrogen evolution, Chemical Engineering Journal, , 501, - (2024 )
• Hexagonal Boron Nitride for NextGeneration Photonics and Electronics, Advanced Materials, , 35, - (2023 )
• Electricfielddriven interfacial trapping of drifting triboelectric charges via contact electrification, Energy Environmental Science, , 16, 598-609 (2023 )
• Conformal Growth of Hexagonal Boron Nitride on HighAspectRatio SiliconBased Nanotrenches, Chemistry of Materials, , 35, 2429-2438 (2023 )
• Enhanced Activity and Selectivity for Electrochemical CO2 Reduction through Water Activation by Oxophilic Metal Deposited on Ag, ACS Applied Energy Materials, , 6, 4413-4421 (2023 )
• StratumConfined SolidState Reaction (SCSSR) toward Colloidal SiliconBased Hollow Nanostructures for Bioapplications, Small, , , - (2023 )
• Nanostructured BiVO4 obtained by the vanadium calcination of Bi2O3 nanohelixes for enhanced photoelectrochemical water splitting, Journal of Materials Chemistry A, , 11, 17644-17650 (2023 )
• Efficient Alkaline Hydrogen Evolution Reaction Using Superaerophobic Ni Nanoarrays with Accelerated Hsub2sub Bubble Release, Advanced Materials, , 35, - (2023 )
• Hexagonal Boron Nitride for NextGeneration Photonics and Electronics, Advanced Materials, , , - (2022 )
• Dennard Scaling in Optoelectronics Scientific Challenges and Countermeasures of Micro‐LEDs for Displays, Laser Photonics Reviews, , 16, 2100433- (2022 )
• Tailoring Binding Abilities by Incorporating Oxophilic Transition Metals on 3D Nanostructured Ni Arrays for Accelerated Alkaline Hydrogen Evolution Reaction, Journal of the American Chemical Society, , 143, 1399-1408 (2021 )
• Structural evolution of hexagonal boron nitride powder by Beadmilling, Materials Letters, , 300, - (2021 )
• ZnFe2O4 DendriteSnO2 Helix 3D HeteroStructure Photoanodes for Enhanced Photoelectrochemical Water Splitting Triple Functions of SnO2 Nanohelix, Small, , 17, - (2021 )
• Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaNGaN Epitaxial Wafer for HighPerformance Radio Frequency Applications, ACS Applied Materials Interfaces, , 13, 59440-59449 (2021 )
• van der Waals gapinserted lightemitting pn heterojunction of ZnO nanorodsgraphenepGaN film, CURRENT APPLIED PHYSICS, , 20, 352-357 (2020 )
• Gatetunable gas sensing behaviors in airstable ambipolar organic thinfilm transistors, RSC ADVANCES, , 10, 1910-1916 (2020 )
• Counterintuitive junction temperature behavior in AlGaNbased deepultraviolet lightemitting diodes, AIP ADVANCES, , 10, - (2020 )
• Microwaveassisted evolution of WO3 and WS2WO3 hierarchical nanotrees, Journal of Materials Chemistry A, , 8, 9654-9660 (2020 )
• Remote heteroepitaxy of GaN microrod heterostructures for deformable lightemitting diodes and wafer recycle, SCIENCE ADVANCES, , 6, - (2020 )
• Control of magnesium in vitro degradation based on ultrafinegrained surface gradient structure using ultrasonic nanocrystalline surface modification, Materialia, , 12, - (2020 )
• AlGaN DeepUltraviolet LightEmitting Diodes with Localized Surface Plasmon Resonance by a HighDensity Array of 40 nm Al Nanoparticles, ACS APPLIED MATERIALS INTERFACES, , 12, 36339-36346 (2020 )
• Resistive Switching in FewLayer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge Transfer, ACS APPLIED MATERIALS INTERFACES, , 12, 46288-46295 (2020 )
• ThreeDimensional Tungsten Disulfide Raman Biosensor for Dopamine Detection, ACS Applied Bio Materials, , 3, 7687-7695 (2020 )
• Performance of Recessed Anode AlGaNGaN Schottky Barrier Diode Passivated With HighTemperature Atomic LayerDeposited Al2O3 Layer, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 66, 324-329 (2019 )
• Overcoming ineffective resistance modulation in ptype NiO gas sensor by nanoscale Schottky contacts, NANOTECHNOLOGY, , 30, - (2019 )
• Epitaxial van der Waals Contacts between TransitionMetal Dichalcogenide Monolayer Polymorphs, Nano Letters, , 19, 1814-1820 (2019 )
• Waferscale and selectivearea growth of highquality hexagonal boron nitride on Ni(111) by metalorganic chemical vapor deposition, Scientific Reports, , 9, - (2019 )
• Epitaxial growth of WO3 nanoneedles achieved using a facile flame surface treatment process engineering of hole transport and water oxidation reactivity (vol 6 pg 19542 2018), JOURNAL OF MATERIALS CHEMISTRY A, , 7, 5832-5832 (2019 )
• Amorphous Tin Oxide Nanohelix Structure Based Electrode for Highly Reversible NaIon Batteries, ACS Nano, , 13, 6513-6521 (2019 )
• Electroluminescence from hBN by using Al2O3hBN multiple heterostructure, OPTICS EXPRESS, , 27, 19692-19701 (2019 )
• Improvements in structural and optical properties of waferscale hexagonal boron nitride film by postgrowth annealing, SCIENTIFIC REPORTS, , 9, - (2019 )
• HighOutput and BendingTolerant Triboelectric Nanogenerator Based on an Interlocked Array of SurfaceFunctionalized Indium Tin Oxide Nanohelixes, ACS ENERGY LETTERS, , 4, 1748-1754 (2019 )
• Selfprotective GaInNbased lightemitting diodes with VO2 nanowires, NANOSCALE, , 11, 18444-18448 (2019 )
• Transfer or delivery of micro lightemitting diodes for lightemitting diode displays, AIP Advances, , 9, - (2019 )
• Enhanced catalytic activity of edgeexposed 1T phase WS2 grown directly on a WO3 nanohelical array for water splitting, Journal of Materials Chemistry A, , 7, 26378-26384 (2019 )
• An array of metal oxides nanoscale hetero pn junctions toward designable and highlyselective gas sensors, SENSORS AND ACTUATORS BCHEMICAL, , 255, 1663-1670 (2018 )
• Observation of spacechargelimited current in AlGaNGaN ultraviolet lightemitting diodes, MATERIALS LETTERS, , 214, 217-219 (2018 )
• Fundamental Limitations of WideBandgap Semiconductors for LightEmitting Diodes, ACS Energy Letters, , 3, 655-662 (2018 )
• Wavelengthdependent visible light response in vertically aligned nanohelical TiO2based Schottky diodes, APPLIED PHYSICS LETTERS, , 112, - (2018 )
• Straininduced Indium Clustering in Nonpolar InGaN Quantum Wells, ACTA MATERIALIA, , 145, 109-122 (2018 )
• Low Temperature SolutionProcessable Cesium Lead Bromide Microcrystals for Light Conversion, CRYSTAL GROWTH DESIGN, , 18, 3161-3166 (2018 )
• DefectMediated InPlane Electrical Conduction in FewLayer sp(2)Hybridized Boron Nitrides, ACS APPLIED MATERIALS INTERFACES, , 10, 17287-17294 (2018 )
• Multiple Heterojunction in Single Titanium Dioxide Nanoparticles for Novel MetalFree Photocatalysis, NANO LETTERS, , 18, 4257-4262 (2018 )
• Microwaveassisted synthesis of group 5 transition metal dichalcogenide thin films, Journal of Materials Chemistry C, , 6, 11303-11311 (2018 )
• Pyramidal Metaldielectric hybridstructure geometry with an asymmetric TiO2 layer for broadband light absorption and photocatalytic applications, NANO ENERGY, , 53, 468-474 (2018 )
• A Highly Sensitive Force Sensor with Fast Response Based on Interlocked Arrays of Indium Tin Oxide Nanosprings toward Human Tactile Perception, ADVANCED FUNCTIONAL MATERIALS, , 28, - (2018 )
• Epitaxial growth of WO3 nanoneedles achieved using a facile flame surface treatment process engineering of hole transport and water oxidation reactivity, JOURNAL OF MATERIALS CHEMISTRY A, , 6, 19542-19546 (2018 )
• Directly Assembled 3D Molybdenum Disulfide on Silicon Wafer for Efficient Photoelectrochemical Water Reduction, ADVANCED SUSTAINABLE SYSTEMS, , 2, - (2018 )
• Highlysensitive H2 sensor operating at room temperature using PtTiO2 nanoscale Schottky contacts, SENSORS AND ACTUATORS BCHEMICAL, , 241, 985-992 (2017 )
• Review—Group IIINitrideBased Ultraviolet LightEmitting Diodes Ways of Increasing External Quantum Efficiency, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , 6, Q42-Q52 (2017 )
• White lightemitting diodes History progress and future, LASER PHOTONICS REVIEWS, , 11, 1600147- (2017 )
• Flexible NearField Wireless Optoelectronics as Subdermal Implants for Broad Applications in Optogenetics, NEURON, , 93, 509-521.E3 (2017 )
• Pressure dependent growth of waferscale fewlayer hBN by metalorganic chemical vapor deposition, CRYSTAL GROWTH DESIGN, , 17, 2569-2575 (2017 )
• Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metalorganic chemical vapor deposition, AIP ADVANCES, , 7, - (2017 )
• Optical and facet dependent carrier recombination properties of hendecafacet InGaNGaN micro light emitters, CRYSTAL GROWTH DESIGN, , 17, 3649-3655 (2017 )
• Enhanced light extraction efficiency of microring array AlGaN deep ultraviolet lightemitting diodes, JAPANESE JOURNAL OF APPLIED PHYSICS, , 56, - (2017 )
• Image processingbased analysis of interfacial phases in brazed stainless steel with Nibased filler metal, MATERIALS CHARACTERIZATION, , 130, 278-284 (2017 )
• The Effect of Imbalanced Carrier Transport on the Efficiency Droop in GaInNBased Blue and Green LightEmitting Diodes, ENERGIES, , 10, - (2017 )
• Improved performance of AlGaNbased deep ultraviolet lightemitting diodes with nanopatterned AlNsapphire substrates, Applied Physics Letters, , 110, - (2017 )
• HazeFree Highly Transparent Glass Substrates with Nanostructured Surface by Using SelfAssembled Ag Etch Masks, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , 5, R6-R11 (2016 )
• Highly photoresponsive and wavelengthselective circularlypolarizedlight detector based on metaloxides heterochiral thin film, SCIENTIFIC REPORTS, , 6, - (2016 )
• Variation of the external quantum efficiency with temperature and current density in red blue and deep ultraviolet lightemitting diodes, JOURNAL OF APPLIED PHYSICS, , 119, 19580- (2016 )
• Energy bandgap variation in oblique angledeposited indium tin oxide, APPLIED PHYSICS LETTERS, , 108, 41910- (2016 )
• An elegant route to overcome fundamentallylimited light extraction in AlGaN deepultraviolet lightemitting diodes Preferential outcoupling of strong inplane emission, SCIENTIFIC REPORTS, , 6, 22537- (2016 )
• Effect of curved graphene oxide in a GaN lightemittingdiode for improving heat dissipation with a patterned sapphire substrate, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, , 31, 85010- (2016 )
• Unassisted photoelectrochemical water splitting exceeding 7 solar to hydrogen conversion efficiency using photon recycling, Nature Communications, , 7, 11943- (2016 )
• Wafer-scale antireflective protection layer of solution-processed TiO2 nanorods for high performance silicon-based water splitting photocathodes, JOURNAL OF MATERIALS CHEMISTRY A, , 4, 9477-9485 (2016 )
• Reversible phase modulation and hydrogen storage in multivalent VO2 epitaxial thin films, NATURE MATERIALS, , 15, 1113-1119 (2016 )
• Reversebiasdriven dichromatic electroluminescence of nZnO wire arrayspGaN film heterojunction lightemitting diodes, APPLIED PHYSICS LETTERS, , 109, 101103- (2016 )
• Arrays of Truncated Cone AlGaN DeepUltraviolet LightEmitting Diodes Facilitating Efficient Outcoupling of inPlane Emission, ACS Photonics, , 3, 2030-2034 (2016 )
• A waferscale antireflective protection layer of solutionprocessed TiO2 nanorods for high performance siliconbased water splitting photocathodes, JOURNAL OF MATERIALS CHEMISTRY A, , 4, 9477-9485 (2016 )
• Enhanced power conversion efficiency of dyesensitized solar cells with multifunctional photoanodes based on a threedimensional TiO2 nanohelix array, SOLAR ENERGY MATERIALS AND SOLAR CELLS, , 132, 47-55 (2015 )
• Correlative analysis of strain-charge relationship in an InGaN/GaN multiquantum well structure using inline electron holography, Advanced Materials Interfaces, , 2, - (2015 )
• Overcoming the Fundamental Limitation in LightExtraction Efficiency of DeepUltraviolet LightEmitting Diodes by Utilizing TransverseMagneticDominant Emission, LightScience Applications, , 3, 9- (2015 )
• Polarizationengineered high efficiency GaInN lightemitting diodes optimized by genetic algorithm, IEEE PHOTONICS JOURNAL, , 7, 1300209- (2015 )
• Optoelectronic properties of TiO2 nanohelices with embedded HC(NH2)(2)PbI3 perovskite solar cells, Journal of Materials Chemistry A, , 3, 9179-9186 (2015 )
• Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission, LIGHT-SCIENCE & APPLICATIONS, , 4, - (2015 )
• Correlative HighResolution Mapping of Strain and Charge Density in a Strained Piezoelectric Multilayer, ADVANCED MATERIALS INTERFACES, , 2, - (2015 )
• Modulation of holeinjection in GaInNlight emitting triodes and its effect on carrier recombination behavior, AIP Advances, , 5, - (2015 )
• Effect of a ptype ZnO insertion layer on the external quantum efficiency of GaInN lightemitting diodes, APPLIED PHYSICS EXPRESS, , 8, - (2015 )
• ThreeDimensional MetalOxide Nanohelix Arrays Fabricated by Oblique Angle Deposition Fabrication Properties and Applications, NANOSCALE RESEARCH LETTERS, , 10, - (2015 )
• The beneficial effects of a ptype GaInN spacer layer on the efficiency of GaInNGaN lightemitting diodes, CURRENT APPLIED PHYSICS, , 15, 1222-1225 (2015 )
• Onset of the Efficiency Droop in GalnN Quantum Well LightEmitting Diodes under Photoluminescence and Electroluminescence Excitation, ACS PHOTONICS, , 2, 1013-1018 (2015 )
• Spatially graded TiO2SiO2 Bragg reflector with rainbowcolored photonic band gap, OPTICS EXPRESS, , 23, 17568-17575 (2015 )
• Distinct Ushape efficiencyversuscurrent curves in AlGaNbased deepultraviolet lightemitting diodes, OPTICS EXPRESS, , 23, 15398-15404 (2015 )
• Temperature dependence of efficiency in GaInNGaN lightemitting diodes with a GaInN underlayer, International Journal of Applied Ceramic Technology, , , - (2015 )
• Visible Color Tunable Emission in ThreeDimensional Light Emitting Diodes by MgO Passivation of Pyramid Tip, ACS Applied Materials and Interfaces, , 7, 27743-27748 (2015 )
• Recent Advances in White LEDs and SolidState Lighting FOREWORD, JAPANESE JOURNAL OF APPLIED PHYSICS, , 54, - (2015 )
• ZnO nanowirebased antireflective coatings with doublenanotextured surfaces, ACS APPLIED MATERIALS INTERFACES, , 6, 1375-1379 (2014 )
• ThreeDimensional Branched Nanowire Heterostructures as Efficient LightExtraction Layer in LightEmitting Diodes, Advanced Functional Materials, , 24, 3384-3391 (2014 )
• ThreeDimensional Nanostructured IndiumTinOxide Electrodes for Enhanced Performance of Bulk Heterojunction Organic Solar Cells, ADVANCED ENERGY MATERIALS, , 4, 1301566- (2014 )
• Down-conversion in Tm3 +/Yb3 + doped glasses for multicrystalline silicon photo-voltaic module efficiency enhancement, Journal of non-crystalline solids, , 388, 181-183 (2014 )
• Strong Correlation between Capacitance and Breakdown Voltage of GaInNGaN LightEmitting Diodes, ELECTRONIC MATERIALS LETTERS, , 10, 1155-1157 (2014 )
• Efficient photoelectrochemical hydrogen production from bismuth vanadatedecorated tungsten trioxide helix nanostructures, NATURE COMMUNICATIONS, , 5, - (2014 )
• Graphene oxide nanosheet wrapped whiteemissive conjugatedpolymer nanoparticles, ACS Nano, , 8, 4248-4256 (2014 )
• Enhanced power conversion efficiency of quantum dot sensitized solar cells with near singlecrystalline TiO2 nanohelixes used as photoanodes, Optics Express, , 22, A867-A879 (2014 )
• Downconversion in Tm3Yb3 doped glasses for multicrystalline silicon photovoltaic module efficiency enhancement, JOURNAL OF NONCRYSTALLINE SOLIDS, , 383, 181-183 (2014 )
• Strain mapping of LED devices by darkfield inline electron holography Comparison between deterministic and iterative phase retrieval approaches, ULTRAMICROSCOPY, , 127, 119-125 (2013 )
• Efficiency droop in lightemitting diodes Challenges and countermeasures, LASER PHOTONICS REVIEWS, , 7, 8-421 (2013 )
• Effect of Quantum Barrier Thickness in the MultipleQuantumWell Active Region of GaInNGaN LightEmitting Diodes, Photonics Journal IEEE, , 5, - (2013 )
• Enhanced overall efficiency of GaInNbased lightemitting diodes with reduced efficiency droop by Alcompositiongraded AlGaNGaN superlattice electron blocking layer, Applied Physics Letters, , 103, - (2013 )
• Enhanced phosphor conversion efficiency of GaNbased white lightemitting diodes having dichroicfiltering contacts, Journal of Materials Chemistry C, , 1, - (2013 )
• Ohmic contacts to Nface pGaN using NiAu for the fabrication of polarization inverted lightemitting diodes, Journal of Nanoscience and Nanotechnology, , 13, 5715-5718 (2013 )
• Freestanding luminescent films of nitrogenrich carbon nanodots towards large scale phosphorbased white lightemitting devices, Chemistry of Materials, , 25, 1893-1899 (2013 )
• A near single crystalline TiO2 nanohelix array enhanced gas sensing performance and its application as a monolithically integrated electronic nose, Analyst, , 138, 443-450 (2013 )
• Enhanced broadband and omnidirectional performance of polycrystalline Si solar cells by using discrete multilayer antireflection coatings, Optics Express, , 21, A157-A166 (2013 )
• Enhanced Omnidirectional Photovoltaic Performance of Solar Cells Using MultipleDiscreteLayer Tailored and LowRefractive Index AntiReflection Coatings, Advanced Functional Materials, , 23, 583-590 (2013 )
• Analysis of the reverse leakage current in AlGaNGaN Schottky barrier diodes treated with fluorine plasma, Applied Physics Letters, , 100, - (2012 )
• Temperature dependent efficiency droop in GaInN lightemitting diodes with different current densities, APPLIED PHYSICS LETTERS, , 100, - (2012 )
• Carrier transport mechanism of AlGaNGaN Schottky barrier diodes with various Al mole fractions, Physica Status Solidi (C) Current Topics in Solid State Physics, , 9, 851-854 (2012 )
• Selfactivated ultrahigh chemosensitivity of oxide thin film nanostructures for transparent sensors, Scientific Reports 2, , , - (2012 )
• Strain mapping of LED devices by dark-field inline electron holography: Comparison between deterministic and iterative phase retrieval approaches, ULTRAMICROSCOPY, , , - (2012 )
• Reduction of efficiency droop in GaInNGaN Lightemitting diodes with thick AlGaN cladding layers, Electronic Materials Letters, , 8, 1-4 (2012 )
• Strong light extraction enhancement in GaInN lightemitting diodes by using selforganized nanoscale patterning of ptype GaN, APPLIED PHYSICS LETTERS, , 98, - (2011 )
• Temperaturedependent lightoutput characteristics of GaInN lightemitting diodes with different dislocation densities, PHYSICA STATUS SOLIDI AAPPLICATIONS AND MATERIALS SCIENCE, , 208, 947-950 (2011 )
• Comparison of metalorganic decomposed (MOD) cerium oxide (CeO(2)) gate deposited on GaN and SiC substrates Preface, JOURNAL OF CRYSTAL GROWTH, , 326, 1-1 (2011 )
• Nanostructured Multilayer TailoredRefractiveIndex Antireflection Coating for Glass with Broadband and Omnidirectional Characteristics, APPLIED PHYSICS EXPRESS, , 4, - (2011 )
• Promotion of hole injection enabled by GaInNGaN lightemitting triodes and its effect on the efficiency droop, APPLIED PHYSICS LETTERS, , 99, 181115-181117 (2011 )
• Optically functional surface composed of patterned gradedrefractiveindex coatings to enhance lightextraction of GaInN lightemitting diodes, JOURNAL OF APPLIED PHYSICS, , 110, - (2011 )
• Efficiency droop in GaInN highpower lightemitting diodes, International Journal of High Speed Electronics and Systems, , 20, 247-265 (2011 )
• Analysis of reverse tunnelling current in GaInN lightemitting diodes, ELECTRONICS LETTERS, , 46, 156-157 (2010 )
• Performance of Antireflection Coatings Consisting of Multiple Discrete Layers and Comparison with Continuously Graded Antireflection Coatings, APPLIED PHYSICS EXPRESS, , 3, 82502- (2010 )
• Growth and characteristics of GaInNGaInN multiple quantum well lightemitting diodes, JOURNAL OF APPLIED PHYSICS, , 107, 63102- (2010 )
• Demonstration of optical interference filters utilizing tunable refractive index layers, OPTICS EXPRESS, , 18, A594-A599 (2010 )
• Characteristics of Blue and Ultraviolet LightEmitting Diodes with Current Density and Temperature, ELECTRONIC MATERIALS LETTERS, , 6, 51-53 (2010 )
• EFFECT OF CHIP GEOMETRY ON BREAKDOWN VOLTAGE OF GAINN LIGHTEMITTING DIODES, ELECTRONICS LETTERS, , 45, 755-756 (2009 )
• REDUCTION IN EFFICIENCY DROOP FORWARD VOLTAGE IDEALITY FACTOR AND WAVELENGTH SHIFT IN POLARIZATIONMATCHED GAINNGAINN MULTIQUANTUMWELL LIGHTEMITTING DIODES", APPLIED PHYSICS LETTERS, , 94, 11113-11113 (2009 )
• The origin of the high diodeideality factors in GaInNGaN multiple quantum well lightemitting diodes, APPLIED PHYSICS LETTERS, , 94, - (2009 )
• On resonant optical excitation and carrier escape in GaInNGaN quantum wells, APPLIED PHYSICS LETTERS, , 94, - (2009 )
• Internal quantum efficiency and nonradiative recombination coefficient of GaInNGaN multiple quantum wells with different dislocation densities, APPLIED PHYSICS LETTERS, , 94, - (2009 )
• Broadband omnidirectional antireflection coatings optimized by genetic algorithm, OPTICS LETTERS, , 34, 728-730 (2009 )
• High output power density from GaNbased twodimensional nanorod lightemitting diode arrays, APPLIED PHYSICS LETTERS, , 94, - (2009 )
• Improved color rendering and luminous efficacy in phosphorconverted white lightemitting diodes by use of dualblue emitting active regions, OPTICS EXPRESS, , 17, 10806-10813 (2009 )
• Engineered nanoporous and nanostructured films, MATERIALS TODAY, , 12, 36-45 (2009 )
• Partial Polarization Matching in GaInNBased Multiple Quantum Well Blue LEDs Using Ternary GaInN Barriers for a Reduced Efficiency Droop, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, , 15, 1122-1127 (2009 )
• Color tunable lightemitting diodes with modified pulsewidth modulation, PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS, , 3, 284-286 (2009 )
• Electroluminescence induced by photoluminescence excitation in GaInNGaN lightemitting diodes, APPLIED PHYSICS LETTERS, , 95, 191105- (2009 )
• RefractiveIndexMatched IndiumTinOxide Electrodes for Liquid Crystal Displays, JAPANESE JOURNAL OF APPLIED PHYSICS, , 48, - (2009 )
• Improved performance of GaNbased blue light emitting diodes with InGaNGaN multilayer barriers, APPLIED PHYSICS LETTERS, , 95, 241109-241109 (2009 )
• Lightextraction enhancement of GaInN lightemitting diodes by gradedrefractiveindex indium tin oxide antireflection contact, ADVANCED MATERIALS, , 20, 801-801 (2008 )
• Design of multilayer antireflection coatings made from cosputtered and lowrefractiveindex materials by genetic algorithm, OPTICS EXPRESS, , 16, 5290-5298 (2008 )
• Highrefractiveindex TiO2nanoparticleloaded encapsulants for lightemitting diodes, JOURNAL OF APPLIED PHYSICS, , 103, - (2008 )
• Quantification of porosity and deposition rate of nanoporous films grown by obliqueangle deposition, APPLIED PHYSICS LETTERS, , 93, - (2008 )
• Realization of a nearperfect antireflection coating for silicon solar energy utilization, OPTICS LETTERS, , 33, 2527-2529 (2008 )
• Elimination of total internal reflection in GaInN lightemitting diodes by gradedrefractiveindex micropillars, APPLIED PHYSICS LETTERS, , 93, - (2008 )
• Transcending the replacement paradigm of solidstate lighting, OPTICS EXPRESS, , 16, 21835-21842 (2008 )
• Polarizationmatched GaInNAlGaInN multiquantumwell lightemitting diodes with reduced efficiency droop, APPLIED PHYSICS LETTERS, , 93, - (2008 )
• Effect of dislocations on electrical and optical properties of ntype Al034Ga066N, APPLIED PHYSICS LETTERS, , 93, - (2008 )
• Nanostructured multilayer gradedindex antireflection coating for Si solar cells with broadband and omnidirectional characteristics, APPLIED PHYSICS LETTERS, , 93, - (2008 )
• Kinetic study of Almole fraction in AlxGa1xN grown on cplane sapphire and AlN bulk substrates by metalorganic vaporphase epitaxy, APPLIED PHYSICS LETTERS, , 90, - (2007 )
• Comparative study of ntype AlGaN grown on sapphire by using a superlattice layer and a lowtemperature AlN interlayer, JOURNAL OF CRYSTAL GROWTH, , 299, 59-62 (2007 )
• Studies of 4HSiC wafer and its epitaxial layers grown by chemical vapor deposition, PHYSICA BCONDENSED MATTER, , 391, 35-41 (2007 )
• Distributed Bragg reflector consisting of high and lowrefractiveindex thin film layers made of the same material, APPLIED PHYSICS LETTERS, , 90, - (2007 )
• Optical thinfilm materials with low refractive index for broadband elimination of Fresnel reflection, NATURE PHOTONICS, , 1, 176-179 (2007 )
• Optimization of highquality AlN epitaxially grown on (0001) sapphire by metalorganic vaporphase epitaxy, JOURNAL OF ELECTRONIC MATERIALS, , 36, 533-537 (2007 )
• Recombination dynamics in ultraviolet lightemitting diodes with Sidoped AlxGa1xNAlyGa1yN multiple quantum well active regions, JOURNAL OF APPLIED PHYSICS, , 101, - (2007 )
• Polarization of light emission by 460 nm GaInNGaN lightemitting diodes grown on (0001) oriented sapphire substrates, APPLIED PHYSICS LETTERS, , 91, - (2007 )
• Lowrefractiveindex materials A new class of optical thinfilm materials, PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS, , 244, 3002-3008 (2007 )
• Encapsulation shape with nonrotational symmetry designed for extraction of polarized light from unpolarized sources, OPTICS EXPRESS, , 15, 10452-10457 (2007 )
• Linearly polarized emission from GaInN lightemitting diodes with polarizationenhancing reflector, OPTICS EXPRESS, , 15, 11213-11218 (2007 )
• Parasitic subbandgap emission originating from compensating native defects in Si doped AlGaN, APPLIED PHYSICS LETTERS, , 91, - (2007 )
• Origin of efficiency droop in GaNbased lightemitting diodes, APPLIED PHYSICS LETTERS, , 91, - (2007 )
• Effect of dislocation density on efficiency droop in GaInNGaN lightemitting diodes, APPLIED PHYSICS LETTERS, , 91, - (2007 )
• GaInN lightemitting diode with conductive omnidirectional reflector having a lowrefractiveindex indiumtin oxide layer, APPLIED PHYSICS LETTERS, , 88, - (2006 )
• Light extraction in GaInN lightemitting diodes using diffuse omnidirectional reflectors, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 153, G105-G107 (2006 )
• Very lowrefractiveindex optical thin films consisting of an array of SiO2 nanorods, OPTICS LETTERS, , 31, 601-603 (2006 )
• Effect of CSi ratio on deep levels in epitaxial 4HSiC, APPLIED PHYSICS LETTERS, , 88, - (2006 )
• Surface studies of SiC epitaxial layers grown by chemical vapor deposition, MATERIALS SCIENCE AND ENGINEERING BSOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, , 129, 22-30 (2006 )
• GaN lightemitting triodes for highefficiency hole injection, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 153, G734-G737 (2006 )
• Quantitative assessment of diffusivity and specularity of surfacetextured reflectors for light extraction in lightemitting diodes, JOURNAL OF VACUUM SCIENCE TECHNOLOGY A, , 24, 1627-1630 (2006 )
• Trapped whisperinggallery optical modes in white lightemitting diode lamps with remote phosphor, APPLIED PHYSICS LETTERS, , 89, - (2006 )
• Very high quality AlN grown on (0001) sapphire by metalorganic vapor phase epitaxy, APPLIED PHYSICS LETTERS, , 89, - (2006 )
• Enhanced lightextraction in GaInN nearultraviolet lightemitting diode with Albased omnidirectional reflector having NiZnAg microcontacts, APPLIED PHYSICS LETTERS, , 89, - (2006 )
• Solidstate lighting a benevolent technology, REPORTS ON PROGRESS IN PHYSICS, , 69, 3069-3099 (2006 )
• Junction and carrier temperature measurements in deepultraviolet lightemitting diodes using three different methods, APPLIED PHYSICS LETTERS, , 86, - (2005 )
• Solidstate light sources getting smart, SCIENCE, , 308, 1274-1278 (2005 )
• Analysis of highpower packages for phosphorbased whitelightemitting diodes, APPLIED PHYSICS LETTERS, , 86, - (2005 )
• Strongly enhanced phosphor efficiency in GaInN white lightemitting diodes using remote phosphor configuration and diffuse reflector cup, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2LETTERS EXPRESS LETTERS, , 44, - (2005 )
• Silica nanorodarray films with very low refractive indices, NANO LETTERS, , 5, 1385-1387 (2005 )
• Internal highreflectivity omnidirectional reflectors, APPLIED PHYSICS LETTERS, , 87, - (2005 )
• Junction temperature in ultraviolet lightemitting diodes, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1REGULAR PAPERS BRIEF COMMUNICATIONS REVIEW PAPERS, , 44, 7260-7266 (2005 )
• Growth and characterization of SiC epitaxial layers on Si and Cface 4H SiC substrates by chemicalvapor deposition, JOURNAL OF APPLIED PHYSICS, , 98, - (2005 )
• GaN MSM ultraviolet photodetectors with transparent and thermally stable RuO2 and IrO2 Schottky contacts, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 151, G190-G195 (2004 )
• Ptype conductivity in bulk AlxGa1xN and AlxGa1xNAlyGa1yN superlattices with average Al mole fraction 20, APPLIED PHYSICS LETTERS, , 84, 3310-3312 (2004 )
• GaInN lightemitting diodes with RuO2SiO2Ag omnidirectional reflector, APPLIED PHYSICS LETTERS, , 84, 4508-4510 (2004 )
• Ohmic contacts for high power LEDs, PHYSICA STATUS SOLIDI AAPPLIED RESEARCH, , 201, 2831-2836 (2004 )
• MetalGaN reaction chemistry and their electrical properties, PHYSICA STATUS SOLIDI BBASIC RESEARCH, , 241, 2771-2774 (2004 )
• Electrical properties of metal contacts on laserirradiated ntype GaN, APPLIED PHYSICS LETTERS, , 82, 580-582 (2003 )
• Effect of microstructural change on magnetic property of Mnimplanted ptype GaN, APPLIED PHYSICS LETTERS, , 82, 583-585 (2003 )
• Effect of surface treatment on Schottky barrier height of ptype GaN, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 150, G209-G211 (2003 )
• Microstructural study of Pt contact on ptype GaN, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, , 21, 87-90 (2003 )
• Current conduction mechanism of PtGaN and PtAl035Ga065N Schottky diodes, JOURNAL OF APPLIED PHYSICS, , 94, 7201-7205 (2003 )
• Effect of a Au overlayer on thermal stability of Pt transparent ohmic contact on ptype GaN, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 149, G266-G270 (2002 )
• Mechanism for Ohmic contact formation of Ti on ntype GaN investigated using synchrotron radiation photoemission spectroscopy, JOURNAL OF APPLIED PHYSICS, , 91, 9214-9217 (2002 )
• Mechanism of twodimensional electron gas formation in AlxGa1xNGaN heterostructures, APPLIED PHYSICS LETTERS, , 81, 1249-1251 (2002 )
• Lowresistance TiAl ohmic contact on undoped ZnO, JOURNAL OF ELECTRONIC MATERIALS, , 31, 868-871 (2002 )
• Xray photoemission determination of the Schottky barrier height of metal contacts to nGaN and pGaN, JOURNAL OF APPLIED PHYSICS, , 92, 6671-6678 (2002 )
• GaN metalsemiconductormetal ultraviolet photodetector with IrO2 Schottky contact, APPLIED PHYSICS LETTERS, , 81, 4655-4657 (2002 )
• Microstructural and electrical investigation of NiAu ohmic contact on ptype GaN, JOURNAL OF ELECTRONIC MATERIALS, , 30, L8-L12 (2001 )
• Effects of surface treatment using aqua regia solution on the change of surface band bending of ptype GaN, JOURNAL OF ELECTRONIC MATERIALS, , 30, 129-133 (2001 )
• Effects of surface treatments on the electrical and the microstructural changes of Pd contact an ptype GaN, JOURNAL OF ELECTRONIC MATERIALS, , 30, 170-174 (2001 )
• Roomtemperature Ohmic contact on ntype GaN with surface treatment using Cl2 inductively coupled plasma, APPLIED PHYSICS LETTERS, , 78, 2015-2017 (2001 )
• Catalytic role of Au in NiAu contact on GaN(0001), APPLIED PHYSICS LETTERS, , 78, 3773-3775 (2001 )
• Positron annihilation study of Pd contacts on impuritydoped GaN, APPLIED PHYSICS LETTERS, , 78, 4142-4144 (2001 )
• The effects of Au overlayer on the thermal stability of Pt ohmic contact on ptype GaN, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, , 39, 23-27 (2001 )
• Ohmic contact formation mechanism of Ni on ntype 4HSiC, APPLIED PHYSICS LETTERS, , 79, 1816-1818 (2001 )
• Lowresistance and thermally stable ohmic contact on ptype GaN using PdNi metallization, APPLIED PHYSICS LETTERS, , 79, 1822-1824 (2001 )
• Au catalyzed structural and electrical evolution of NiAu contact to GaN, PHYSICA STATUS SOLIDI AAPPLIED RESEARCH, , 188, 379-382 (2001 )
• Hightemperature structural behavior of NiAu contact on GaN (0001), MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, , 6, 1-7 (2001 )
• Room Temperature Ohmic contact on ntype GaN using plasma treatment, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, , 6, 1-7 (2001 )
• Transparent Pt ohmic contact on ptype GaN with low resistivity using (NH4)(2)Sx treatment, ELECTROCHEMICAL AND SOLID STATE LETTERS, , 3, 53-55 (2000 )
• 33V supply singlevoltageoperating doubleplanardoped AlGaAsInGaAs PHEMT with double channel for 16GHz digital mobile communications, ELECTRONICS LETTERS, , 36, 262-264 (2000 )
• Ohmic contact formation mechanism of Pd nonalloyed contacts on ptype GaN, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 147, 2297-2302 (2000 )
• Pretreatment effects by aquaregia solution on field emission of diamond film, APPLIED PHYSICS LETTERS, , 76, 3694-3696 (2000 )
• Microstructural investigation of NiAu ohmic contact on ptype GaN, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 147, 4645-4651 (2000 )
• Low transparent Pt ohmic contact on ptype GaN by surface treatment using aqua regia, ELECTRONICS LETTERS, , 35, 1676-1678 (1999 )
• Reduction of ohmic contact resistivity on ptype GaN by surface treatment, PHYSICA STATUS SOLIDI AAPPLIED RESEARCH, , 176, 763-766 (1999 )
• Effect of An overlayer on Ni contacts to ptype GaN, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, , 17, 2675-2678 (1999 )
• Pt ohmic contact to ptype GaN with contact resistivity of 10(4) Omega center dot cm(2) using surface treatment, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, , 35, S1063-S1066 (1999 )
• Effect of surface treatment by KOH solution on ohmic contact formation of ptype GaN, SOLIDSTATE ELECTRONICS, , 43, 435-438 (1999 )
• Ohmic contact formation mechanism of nonalloyed Pd contacts to ptype GaN observed by positron annihilation spectroscopy, APPLIED PHYSICS LETTERS, , 74, 2289-2291 (1999 )
• Effect of surface treatment by (NH4)(2)Sx solution on the reduction of ohmic contact resistivity of ptype GaN, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, , 17, 497-499 (1999 )
• Low resistance PdAu ohmic contacts to ptype GaN using surface treatment, APPLIED PHYSICS LETTERS, , 73, 2953-2955 (1998 )
• Strongly enhanced phosphor efficiency in GaInN white light-emitting diodes using remote phosphor configuration and diffuse reflector cup, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, , 44, - (0020 )

Invited Talk or Presentations

• UV Electroluminescence from CarbonIncorporated hBN Grown by MOCVD, , , 0, - (2025)
• WaferScale AAStacked Hexagonal Boron Nitride Grown on a GaN Substrate, , , 0, - (2025)
• Scalable Hexagonal Boron NitrideBased Memristors with Reliable Analog Switching Behavior, , , 0, - (2025)
• LowTemperature Growth of Hexagonal Boron Nitride on High AspectRatio SiBased NanoTrenches by MetalOrganic Chemical Vapor Deposition, , , 0, - (2025)
• Hexagonal Boron NitrideAluminium Gallium Nitride Heterojunction for HighPerformance Deep Ultraviolet Photodetection, , , 0, - (2025)
• Heteroepitaxy of Hexagonal Boron Nitride on Graphene by MetalOrganic Chemical Vapor Deposition, , , 0, - (2025)
• TiO2 Nanohelices Decorated with Homogeneous AuPd CoreShell Nanocatalysts for Selective Toluene Gas Detection, , , 0, - (2025)
• Monolithic Integration of WavelengthSelective Gas Sensors for Artificial Olfaction System, , , 0, - (2025)
• Insitu Heating Electron Microscopy of Atomic Grain Boundary Migration Dynamics in Monolayer MoS2 Grain Growth, , , 0, - (2025)
• Monolithicallyintegrated Orthogonal Gas Sensor Array with Tailored Response Polarity for Artificial Olfaction, , , 0, - (2025)
• Insitu Heating Electron Microscopy of Atomic Grain Boundary Migration Dynamics in Monolayer MoS2 Grain Growth, , , 0, - (2025)
• Multiple nanofilaments confinement for analogue switching in hexagonal boron nitride memristors, , , 0, - (2025)
• Growth of hexagonal boron nitrides on noncatalytic substrates by MOCVD and their applications, , , 0, - (2025)
• hBN grown on noncatalytic substrates by MOCVD and their applications, , , 0, - (2025)
• UV electroluminescence from carbon incorporated hBN grown by MOCVD, , , 0, - (2025)
• Waferscale Quasivan der Waals Epitaxy of MixedDimensional IIINitrides by Metal Organic Chemical Vapor Deposition, , , 0, - (2025)
• Growth of Hexagonal Boron Nitrides by MOCVD and Their Applications, , , 0, - (2025)
• Growth of hexagonal boron nitride by MOCVD for electronic and photonic applications, , , 0, - (2025)
• Homogeneous bimetallic AuPd nanocatalysts decorated TiO2 nanohelices for selective toluene gas sensor, , , 0, - (2024)
• SizeDependent Degradation via Sidewall Defects and Recombination Processes in InGaNBased Micro LEDs, , , 0, - (2024)
• WaferScale AAStacked Hexagonal Boron Nitride Grown on GaN Substrate, , , 0, - (2024)
• Homogeneous bimetallic AuPd nanocatalysts decorated TiO2 nanohelices for selective toluene gas sensor, , , 0, - (2024)
• Carbon Incorporation in MOCVDGrown hBN and its Optoelectronic Characteristics, , , 0, - (2024)
• HighPerformance Ceramic Catalyst Filters with Textured Waveguides for Efficient Removal of Volatile Organic Compounds, , , 0, - (2024)
• Analog Switching Memristor Based on Hexagonal Boron Nitride Grown on Gallium Nitride Substrate, , , 0, - (2024)
• HighEntropy Spinel Oxide Synthesis and PhotoResponsivity of Mn068Cr08Rh064Co087O4, , , 0, - (2024)
• Growth of Hexagonal Boron Nitride on Graphene by MetalOrganic Chemical Vapor Deposition, , , 0, - (2024)
• Hexagonal boron nitrides grown by MOCVD for photonics and electronics applications, , , 0, - (2024)
• Transistorfree Analog Switching Memristors Based on Hexagonal Boron Nitride Grown on Gallium Nitride Substrate, , , 0, - (2024)
• SizeDependent Degradation via Sidewall Defects and Recombination Processes in InGaNBased Micro LEDs, , , 0, - (2024)
• WaferScale AAStacked Hexagonal Boron Nitride Grown on GaN Substrate, , , 0, - (2024)
• SizeDependent Degradation via Sidewall Defects and Recombination Processes in InGaNBased Micro LEDs, , , 0, - (2024)
• Analog Switching Memristor based on Hexagonal Boron Nitride Grown on Gallium Nitride Substrate, , , 0, - (2024)
• Hexagonal Boron NitrideGallium Nitride Heterojunction for HighPerformance Deep Ultraviolet Photodetection, , , 0, - (2024)
• Carbon Incorporation in MOCVDGrown hBN and Its Optoelectronic Characteristics, , , 0, - (2024)
• Growth of hexagonal boron nitrides by MOCVD and their applications, , , 0, - (2024)
• Growth of hexagonal boron nitrides by MOCVD and their applications, , , 0, - (2024)
• WaferScale AAStacked Hexagonal Boron Nitride Grown on GaN Substrate, , , 0, - (2024)
• First Observation of Suspended AAStacked Hexagonal Boron Nitride Grown on GaN Substrate by MetalOrganic Chemical Vapor Deposition, , , 0, - (2022)
• 3D Geometrycontrolled Superaerophobic Ni Nanoarrays for Efficient Alkaline Hydrogen Evolution Reaction, , , 0, - (2022)
• Activating NiO Nanorods via Nitrogen Doping and Vacancy Engineering for Alkaline Hydrogen Evolution Reaction, , , 0, - (2022)
• Tailoring Binding Abilities by Incorporating Oxophilic Transition Metals on 3D Nanostructured Ni Arrays for Accelerated Alkaline Hydrogen Evolution Reaction, , , 0, - (2022)
• Conformal growth of hexagonal boron nitride on siliconbased nanotrenches with highaspect ratio, , , 0, - (2022)
• Activating NiO Nanorods via Nitrogen Doping and Vacancy Engineering for Alkaline Hydrogen Evolution Reaction, , , 0, - (2022)
• Tailoring Binding Abilities by Incorporating Oxophilic Transition Metals on 3D Nanostructured Ni Arrays for Accelerated Alkaline Hydrogen Evolution Reaction, , , 0, - (2022)
• 3D Geometrycontrolled Superaerophobic Ni Nanoarrays for Efficient Alkaline Hydrogen Evolution Reaction, , , 0, - (2022)
• Ceramic Catalyst Filter with Aligned Ultraviolet Light emitting Diode Array, , , 0, - (2022)
• Response Polarity Tailored MOXbased pn Heterojunction Gas Sensors for Enhancing Selectivity, , , 0, - (2022)
• Direct Conformal Growth of Hexagonal Boron Nitride on Highaspectratio Siliconbased Nanotrenches, , , 0, - (2022)
• Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaNGaN Epitaxial Wafer for HighPerformance RadioFrequency Applications, , , 0, - (2022)
• Direct Conformal Growth of Hexagonal Boron Nitride on Highaspectratio Siliconbased Nanotrenches, , , 0, - (2022)
• Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaNGaN Epitaxial Wafer for HighPerformance Radiofrequency Applications, , , 0, - (2022)
• Tailoring Binding Abilities by Incorporating Oxophilic Transition Metals on 3D Nanostructured Ni Arrays for Accelerated Alkaline Hydrogen Evolution Reaction, , , 0, - (2022)
• Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaNGaN Epitaxial Wafer for HighPerformance RadioFrequency Applications, , , 0, - (2022)
• Direct growth of wafer scale hexagonal boron nitride on silicon dioxide by MOCVD for integration of Sibased electronics, , , 0, - (2022)
• TransferFree Direct Growth of Wafer Scale Hexagonal Boron Nitride on Silicon Dioxide by MOCVD for Integration of SiBased Electronics, , , 0, - (2021)
• MicrowaveAssisted Evolution of WO3 and WS2WO3 Hierarchical Nanotrees for Hydrogen Evolution Reaction, , , 0, - (2021)
• Van Der Waals Heterostructure of Hexagonal Boron Nitride with AlGaNGaN Epitaxial Wafer for HighPerformance Radiofrequency Applications, , , 0, - (2021)
• Tailoring Binding Abilities by Incorporating Oxophilic Transition Metals on 3D Nanostructured Ni Arrays for Accelerated Alkaline Hydrogen Evolution Reaction, , , 0, - (2021)
• Structural Evolution of Hexagonal Boron Nitride Powder by BeadMilling, , , 0, - (2021)
• AlGaN Deep Ultraviolet LightEmitting Diodes with Localized Surface Plasmon Resonance by HighDensity Array of 40nm Al Nanoparticles, , , 0, - (2021)
• Metal OxideBased Gas Sensor with Asymmetric BacktoBack Schottky Contacts for Enhancing Sensitivity and Selectivity, , , 0, - (2021)
• Direct growth of wa fer scale hexagonal boron nitride on silicon dioxide by MOCVD for integration of Sibased electronics, , , 0, - (2021)
• Nucleation and Growth of MOCVD GaN on 2D hBN, , , 0, - (2021)
• Waferscale Growth of Hexagonal Boron Nitride Passivation Layer Directly on IIINitride Highelectron Mobility Transistor for Radiofrequency Operation, , , 0, - (2021)
• MicrowaveAssisted Evolution of WO3 and WS2WO3 Hierarchical Nanotrees For Hydrogen Evolution Reaction, , , 0, - (2021)
• Tailoring Binding Abilities by Incorporating Oxophilic Transition Metals on 3D Nanostructured Ni Arrays for Accelerated Alkaline Hydrogen Evolution Reaction, , , 0, - (2021)
• Metal OxideBased Gas Sensor with Asymmeteric Backtoback Schottky Contacts for Enhancing Sensitivity and Selectivity, , , 0, - (2021)
• Development of ThreeDimensional Nanostructure based Highly Active and Stable Catalytic Electrode for Hydrogen Evolution Reaction, , , 0, - (2021)
• Tailoring Binding Abilities on ThreeDimensional Nanostructured Ni Arrays for Accelerated Alkaline Hydrogen Evolution Reaction, , , 0, - (2021)
• MicrowaveAssisted Evolution of WO3 and WS2WO3 Hierarchical Nanotrees for Hydrogen Evolution Reaction, , , 0, - (2021)
• Three Dimensional Nanostructured Materials for Enhanced Hydrogen Evolution Reactions, , , 0, - (2021)
• AlGaN Deep Ultraviolet LightEmitting Diodes with Localized Surface Plasmon Resonance by HighDensity Array of 40nm Al Nanoparticles, , , 0, - (2020)
• Tailoring binding abilities by incorporating oxophilic transition metals on 3dimensional nanostructured Ni arrays for accelerated alkaline hydrogen evolution reaction, , , 0, - (2020)
• Enhanced Nucleation and Growth of MOCVD GaN on 2D hBN by Thermal Nitridation, , , 0, - (2020)
• Metal OxideBased Gas Sensor with Asymmetric Backtoback Schottky Contacts for Enhancing Sensitivity and Selectivity, , , 0, - (2020)
• MicrowaveAssisted Evolution of WO3 and WS2WO3 Hierarchical Nanotrees For Hydrogen Evolution Reaction, , , 0, - (2020)
• Selfprotective GaInNbased LightEmitting Diodes with VO2 Nanowires, , , 0, - (2020)
• Transferfree direct growth of wafer scale hexagonal boron nitride on silicon dioxide by MOCVD for integration of Sibased electronics, , , 0, - (2020)
• Waferscale and selectivearea growth of highquality hexagonal boron nitride on Ni(111) by metalorganic chemical vapor deposition, , , 0, - (2020)
• Resistive switching in fewlayer hexagonal boron nitride mediated by defects and interfacial charge transfer, , , 0, - (2020)
• Waferscale Growth of Hexagonal Boron Nitride on Gallium Nitride Substrates by Metalorganic Chemical Vapor Deposition, , , 0, - (2020)
• Improvements in structural and optical properties of waferscale, SPIE Photonics West 2020, , 0, - (2020)
• Selfprotective GaInNbased lightemitting diodes with VO2 nanowires, SPIE Photonics West 2020, , 0, - (2020)
• Analytical model for an optimized design of AlGaNbased deep ultraviolet lightemitting diodes, SPIE Photonics West 2020, , 0, - (2020)
• Electroluminescence from hBN by using Al2O3hBN multiple heterostructure, SPIE Photonics West 2020, , 0, - (2020)
• Enhanced Catalytic Activity of EdgeExposed 1TWS2WO3 Nanohelix Array for Efficient Water Splitting, 2019 MRS Fall meeting Exhibit, , 0, - (2019)
• Selfprotective GaInNbased lightemitting diodes with VO2 nanowires, The 5th ICAE 2019, , 0, - (2019)
• Electroluminescence from hBN by Using Al2O3hBN Multiple Heterostructure, The 5th ICAE2019, , 0, - (2019)
• Improvements in structural and optical properties of waferscale hexagonal boron nitride film by postgrowth annealing, The 5th ICAE 2019, , 0, - (2019)
• Waferscale and selectivearea growth of highquality hBN by MOVPE, 4th IWUMD, , 0, - (2019)
• Enhanced Catalytic Activity of EdgeExposed 1TWS2WO3 Nanohelix Array for Efficient Water Splitting, 2019 Joint symposium on Material Science and Engineering for the 21st Century, , 0, - (2019)
• Electrically driven light emission from hBN by using Al2O3hBN, , , 0, - (2019)
• Growth Characteristics of Heteroepitaxial GaN Growth on 2D Hexagonal Boron Nitride by MOCVD, , , 0, - (2019)
• Improvements in structural and optical properties of waferscale hexagonal boron nitride film by postgrowth annealing, , , 0, - (2019)
• Waferscale and selectivearea growth of highquality hexagonal boron nitride on Ni(111) by metalorganic chemical vapor deposition, , , 0, - (2019)
• Enhanced Catalytic Activity of EdgeExposed 1TWS2WO3 Nanohelix Array for Efficient Water Splitting, , , 0, - (2019)
• Highly Efficient AlGaN Deepultraviolet Lightemitting Diodes with Localized Surface Plasmon Resonance by 40 nm Al Nanoparticles, OPIC 2019, , 0, - (2019)
• Epitaxial van der Waals Contacts between TransitionMetal Dichalcogenide Monolayer Polymorphs, The 6th Korean Symposium on Graphene and 2D Materials, , 0, - (2019)
• Epitaxial van der Waals Contacts between TransitionMetal Dichalcogenide Monolayer Polymorphs, , , 0, - (2019)
• Growth and Interface Structural Characterization of MOCVD GaN on hBN, IWN 2018, , 0, - (2018)
• Enhanced catalytic activity of 2D3D hybrid WS2WO3 nanohelix for efficient water splitting, ENGE 2018, , 0, - (2018)
• WaferScale and SelectiveArea Growth of HighQuality Hexagonal Boron Nitride on Ni(111) by MetalOrganic Chemical Vapor Deposition, IWN 2018, , 0, - (2018)
• Enhanced light output power of AlGaNbased deep ultraviolet lightemitting diodes with nanopatterned AlNsapphire substrates, SPIE Optics Photonics 2018, , 0, - (2018)
• Ushape efficiencyversuscurrent curves in AlGaN based deepultraviolet lightemitting diodes, SPIE Optics Photonics 2018, , 0, - (2018)
• Arrays of truncated cone AlGaN deepultraviolet lightemitting diodes for efficient outcoupling of inplane emission, SPIE Optics Photonics 2018, , 0, - (2018)
• Directly Assembled 3D Molybdenum Disulfide on Silicon Wafer for Efficient Photoelectrochemical Water Reduction, 2018 Joint Symposium on MSE of the 21st Century, , 0, - (2018)
• Quasivan der Waals epitaxy of 3D GaN on 2D hBN using MOCVD, Joint Symposium on Materials Science and Engineering for the 21st Century, , 0, - (2018)
• Gas sensing behaviors in metaloxidesbased nanoscale Schottky and hetero pn junctions, 2018년도 한국재료학회 춘계학술대회, , 0, - (2018)
• Amorphous Tin Oxide Nanohelix Structures As an Anode for Highly Efficient NaIon Batteries, 233rd ECS Meeting, , 0, - (2018)
• ThreeDimensional Tin Oxide Nanohelix Structures with Thin Iron Oxide Layer for Efficient Visible Light Driven Water Splitting, 233rd ECS Meeting, , 0, - (2018)
• DefectPairs of Titanium and Carbon in Iron Oxide Film for Efficient Visible Light Driven Water Splitting, 233rd ECS Meeting, , 0, - (2018)
• Defectrelated electrical conduction in fewlayer hexagonal Boron Nitride grown by metalorganic chemical vapor deposition, , , 0, - (2017)
• An Array of Metal Oxides Nanoscale Hetero pn Junctions Toward Designable and HighlySelective Gas Sensors, , , 0, - (2017)
• An array of metal oxides nanoscale hetero p-n junctions toward designable and highly-selective gas sensors, 2017 MRS Fall meeting & Exhibit, 0, 0, - (2017)
• WaferScale van der Waals Epitaxy of 3D GaN on 2D hBN Using MOCVD, , , 0, - (2017)
• WavelengthDependent Photoresponse at the MetalNanostructured TiO2 Interfaces in the Visible Range and Its Persistence, , , 0, - (2017)
• Titanium and Carbon Codoped Iron Oxide Film for Efficient Photoelectrochemical Water Splitting, , , 0, - (2017)
• Amorphous Tin Oxide Helix Nanostructures as an Anode for Highly Efficient NaIon Batteries, , , 0, - (2017)
• Enhanced light extraction from AlGaNbased deepultraviolet lightemitting diodes, , , 0, - (2017)
• A route to overcome fundamentallylimited light extraction in AlGaN deepultraviolet lightemitting diodes Preferential outcoupling of strong inplane emission, , , 0, - (2017)
• Tin Oxide Nanohelix Structures with Thin Iron Oxide Layer for Efficient Photoelectrochemical Water Splitting, , , 0, - (2016)
• Unassisted Photoelectrochemical Water Splitting Exceeding 7 SolartoHydrogen Conversion Efficiency Using Photon Recycling, , , 0, - (2016)
• Highlysensitive H2 sensor operating at room temperature using PtTiO2 nanoscale Schottky contacts, , , 0, - (2016)
• Tin oxide nanohelix structures with thin iron oxide layer for efficient photoelectrochemical water splitting, , , 0, - (2016)
• Preferential Outcoupling of Strong inPlane Emission from AlGaNbased DeepUltraviolet LightEmitting Diodes, , , 0, - (2016)
• External quantum efficiency variation on temperature and current density in red blue and deep ultraviolet lightemitting diodes, , , 0, - (2016)
• Facetdependent optical properties and carrier recombination behavior of hendecafacet panchromatic light emitter, , , 0, - (2016)
• Waferscale growth and characterization of multi –layer hBN by metalorganic chemical vapor deposition, , , 0, - (2016)
• Ushape efficiencyversuscurrent curves in AlGaNbased deepultraviolet lightemitting diodes, , , 0, - (2016)
• PolarizationEngineered HighEfficiency IIINitridebased LightEmitting Diodes Optimized by Genetic Algorithm, , , 0, - (2016)
• An elegant route to overcome fundamentallylimited light extraction in AlGaN deepultraviolet lightemitting diodes preferential outcoupling of strong inplane emission, , , 0, - (2016)
• Nanostructured Thinfilm Materials Fabricated by Oblique Angle Deposition and Their Applications, , , 0, - (2016)
• Microdot deep ultraviolet lightemitting diodes for enhanced outcoupling efficiency, , , 0, - (2016)
• Waferscale growth and characterization of multi –layer hBN by metalorganic chemical vapor deposition, , , 0, - (2016)
• Elegant routes to overcome fundamentallylimited light extraction in AlGaN deepultraviolet lightemitting diodes, , , 0, - (2016)
• Ntype sensing behavior in Ptype NiO gas sensor by modifying contact properties, , , 0, - (2016)
• Ultrasensitive hydrogen sensor operating at room temperature by PtTiO2 nanoscale Schottky contacts, , , 0, - (2016)
• Unassisted Photoelectrochemical Water Splitting Exceeding 7 SolartoHydrogen Conversion Efficiency Using Photon Recycling, , , 0, - (2016)
• Tin oxide nanohelix structures with thin iron oxide layer for efficient photoelectrochemical water splitting, , , 0, - (2016)
• Ultrasensitive hydrogen sensor operating at room temperature by PtTiO2 nanoscale Schottky contacts, , , 0, - (2016)
• Growth and Characterization of Hexagonal Boron Nitrides by MetalOrganic Vapor Phase Epitaxy, , , 0, - (2016)
• Preferential Outcoupling of Strong inPlane Emission from AlGaNbased DeepUltraviolet LightEmitting Diodes, , , 0, - (2016)
• Enhancement in lightextraction efficiency of sidewallemissionenhanced deep ultraviolet lightemitting diodes, , , 0, - (2015)
• The effect of a GaInN spacer layer on the efficiency droop of GaNbased lightemitting diodes, , , 0, - (2015)
• Visible Color Tunable Emission in Threedimensional Light Emitting Diodes by MgO Passivation of Pyramid Tip, , , 0, - (2015)
• PolarizationEngineered HighEfficiency IIINitridebased LightEmitting Diodes Optimized by Genetic Algorithm, , , 0, - (2015)
• Modulation of holeinjection in GaInN light emitting triodes and its effect on carrier recombination behavior, , , 0, - (2015)
• Ushape efficiencyversuscurrent curves in AlGaNbased deepultraviolet lightemitting diodes, , , 0, - (2015)
• Overcoming the fundamental limitation in lightextraction efficiency of deep ultraviolet lightemitting diodes by utilizing transversemagneticdominant emission, , , 0, - (2015)
• Enhanced light extraction efficiency of AlGaN based deepultraviolet lightemitting diodes by utilizing strong sidewall emission, , , 0, - (2015)
• Ushape phenomenon in the efficiencyversuscurrent curves in AlGaNbased deepultraviolet lightemitting diodes, , , 0, - (2015)
• Enhancement in lightextraction efficiency of deep ultraviolet lightemitting diodes by utilizing transversemagneticdominant emission, , , 0, - (2015)
• Efficient Photoelectrochemical Hydrogen Production Using Helical Nanostructures as a Light Trapping Layer”, , , 0, - (2015)
• On the Temperature Dependence of Efficiency in IIInitride Lightemitting Diodes, , , 0, - (2015)
• Multifunctional nanostructured thinfilm materials fabricated by obliqueangle deposition for photonics applications, , , 0, - (2015)
• Ushape phenomenon in the efficiencyversuscurrent curves in AlGaNbased deepultraviolet lightemitting diodes, , , 0, - (2015)
• Nanohelical photoelectrodes for efficient energy harvesting applications, , , 0, - (2015)
• Enhanced light extraction and electrical properties of deepultraviolet lightemitting diodes by utilizing transversemagneticdominant emission, , , 0, - (2015)
• Efficient Photoelectrochemical Hydrogen Production from BiVO4decorated WO3 Helix Nanostructures, , , 0, - (2015)
• High Performance Gas Sensors with an Array of Vertically Aligned TiO2 Nanohelixes, , , 0, - (2015)
• Enhanced light extraction and electrical properties of deepultraviolet lightemitting diodes by utilizing transversemagneticdominant emission, , , 0, - (2015)
• Threedimensional nanostructured materials for energy harvesting applications, , , 0, - (2015)
• Temperature dependence of efficiency in GaInNGaN lightemitting diodes with a straincontrol layer, , , 0, - (2015)
• Reduction of junction temperature in GaN lightemitting diode on patterned sapphire substrate using graphene oxide canallike layer, , , 0, - (2015)
• Carrier recombination behavior with varied holeinjection efficiency modulated by lateral electric field in GaNInGaNbased light emitting triodes, , , 0, - (2015)
• Overcoming the Fundamental LightExtraction Efficiency Limitations of DeepUltraviolet LightEmitting Diodes by Utilizing TransverseMagneticDominant Emission, , , 0, - (2015)
• Enhanced phosphor conversion efficiency of GaNbased white LEDs with quantum dot incorporated phosphor by using dichroic filter, , , 0, - (2015)
• Ushape efficiencyversuscurrent curves in AlGaNbased deepultraviolet lightemitting diodes, , , 0, - (2015)
• Enhanced Light Extraction and Electrical Properties of DeepUltraviolet LightEmitting Diodes by Alcoated Omnidirectional reflector, , , 0, - (2015)
• Broadband and high seletivity circular polarization discriminators based on metalnanoparticledecorated chiral metal oxides heterostructure, , , 0, - (2014)
• Enhanced overall efficiency of GaInNbased lightemitting diodes with reduced efficiency droop by Alcompositiongraded AlGaNGaN superlattice electron blocking layer, , , 0, - (2014)
• Enhanced phosphor conversion efficiency of GaNbased white lightemitting diodes having dichroic filtering contacts, , , 0, - (2014)
• Enhanced Light Extraction and Electrical Properties of DeepUltraviolet LightEmitting Diodes by Alcoated Omnidirectional reflector, , , 0, - (2014)
• Enhanced Optical and Electrical Properties of AlGaNbased DeepUltraviolet LightEmitting Diodes by SelectiveAreaGrown GaN microstructures, , , 0, - (2014)
• Efficient Photoelectrochemical Hydrogen Production from BiVO4decorated WO3 Helix Nanostructures, , , 0, - (2014)
• Transparent Electrodes Based on ThreeDimensional Nanohelixes Light Harvesting Applications, , , 0, - (2014)
• Enhanced Light Extraction Efficiency of DeepUltraviolet LightEmitting Diodes by Utilizing TMdominant Light Emission, , , 0, - (2014)
• Enhanced phosphor conversion efficiency of GaNbased white lightemitting diodes having dichroicfiltering contacts, , , 0, - (2014)
• Reduction of efficiency droop and enhanced overall efficiency by graded AlGaNGaN, , , 0, - (2014)
• Enhanced phosphor conversion efficiency of GaNbased white lightemitting diodes having dichroic filtering contacts, , , 0, - (2014)
• Evolving LightEmitting Diodes by Genetic Algorithmbased Optimization, , , 0, - (2014)
• ThreeDimensional WO3Nanohelixesbased Hybridized Photoanodes for Efficient Solar Water Splitting, , , 0, - (2014)
• Enhanced Light Extraction Efficiency of DeepUltraviolet LightEmitting Diodes by Alcoated SelectiveAreaGrown GaN stripes, , , 0, - (2014)
• Evolving LightEmitting Diodes by Genetic Algorithmbased Optimization, , , 0, - (2014)
• AlGaNbased Deep Ultraviolet LightEmitting Diodes Challenges and Opportunities, , , 0, - (2014)
• WO3 NanoHelixes Array Photoanode for Enhanced SolarToHydrogen Efficiency of Photoelectrochemical Cells, , , 0, - (2014)
• Enhanced Light Extraction and Electrical Properties of DeepUltraviolet LightEmitting Diodes by Reflective Contacts on SelectiveAreaGrown GaN, , , 0, - (2014)
• WO3 NanoHelixes Array Photoanode for Enhanced SolarToHydrogen Efficiency of Photoelectrochemical Cells, , , 0, - (2013)
• Nanostructured thinfilm materials fabricated by obliqueangle deposition for energy harvesting applications, , , 0, - (2013)
• Direct mapping of strain and charge reorganization in a strained InGaNGaN with nonpolar orientation using inline electron holography, , , 0, - (2013)
• Efficiency droop in lightemitting diodes Challenges and Countermeasures, , , 0, - (2013)
• Direct mapping of strain and charge reorganization in a strained InGaNGaN with nonpolar orientation using inline electron holography, , , 0, - (2013)
• 2D strain and charge density mapping using inline electron holography with a subnanometer resolution, , , 0, - (2013)
• Probing the effect of holeinjection on the efficiency droop behavior with GaInN lightemitting triode, , , 0, - (2013)
• Reduction of efficiency droop and enhanced overall efficiency by graded AlGaNGaN superlattice electron blocking layers, , , 0, - (2013)
• Evolving lightemitting diodes by genetic algorithmbased optimization, , , 0, - (2013)
• Freestanding Luminescent Films of Nitrogenrich Carbon Nanodots Towards Largescale Phosphorbased White Lightemitting Devices, , , 0, - (2013)
• Optimization of AlGaNGaN superlattice electron blocking layers by genetic algorithm for highefficiency GaNbased lightemitting diodes, , , 0, - (2013)
• Reduced efficiency droop of GaInNbased lightemitting diodes by using graded AlGaNGaN superlattice electron blocking layers, , , 0, - (2013)
• Probing the efficiency droop with GaInN lightemitting triode effect of holeinjection efficiency on droop behavior, , , 0, - (2013)
• Enhanced performance of organic solar cells by using threedimensional nanohelixarray electrodes, , , 0, - (2013)
• Enhancement of power conversion efficiency of dyesensitized solar cells by hybridization of TiO2 nanohelixes array and nanoparticles, , , 0, - (2013)
• Temperaturedependent efficiency droop in GaInN lightemitting diodes, , , 0, - (2013)
• 2D strain and charge density mapping using inline electron holography with a subnanometer resolution, , , 0, - (2012)
• High performance gas sensors with an array of TiO2 nanohelixes, , , 0, - (2012)
• Enhanced performance of dyesensitized solar cells by using photoelectrode films based on TiO2 nanohelixes filled with TiO2 nanoparticles, , , 0, - (2012)
• Nanostructured thin films fabricated by oblique angle deposition for energy harvesting applications, , , 0, - (2012)
• Temperature dependence of the efficiency droop in GaInN lightemitting diodes, , , 0, - (2012)
• Efficiency droop in GaNbased lightemitting diodes Mechanisms and solutions, , , 0, - (2012)
• High efficiency dye sensitized solar cells based on an array of singcrystalline TiO2 nanohelixes, , , 0, - (2012)
• Improved power conversion efficiency of polycrystalline Si solar cells by nanostructured broadband and omnidirectional antireflection coatings, , , 0, - (2012)
• Efficiency droop in GaNbased lightemitting diodes Mechanisms and solutions, , , 0, - (2012)
• TiO2 nanohelix gas sensors with enhanced performance and potential application as a building block of electronic noses, , , 0, - (2012)
• Strain and Charge mapping of LED devices by darkfield inline electron holography, , , 0, - (2012)
• High performance gas sensors with an array of TiO2nanohelixesfabricatedbyobliqueangledeposition, , , 0, - (2011)
• Nanostructured multilayer antireflection coatings with broadband and omnidirectional characteristics and their application for solar cells, , , 0, - (2011)
• Improved phosphor conversion efficiency of white LEDs by using conductive color selective filters made of indiumtinoxide, , , 0, - (2011)
• Optical Thin Film Materials with Low Refractive Index and Their Applications, , , 0, - (2011)
• Improved phosphor conversion efficiency of white LEDs by using conductive color selective filters made of indiumtinoxide, , , 0, - (2011)
• High performance gas sensors with an array of vertically aligned TiO2nanohelixes, , , 0, - (2011)
• Strain analysis of InGaNGaN multiquantum wells by darkfield inline electron holography, , , 0, - (2011)
• Influence of dislocation density on temperature stability of GaInN lightemitting diodes, , , 0, - (2011)
• Carrier transport mechanism of AlGaNGaN Schottky barrier diodes with various Al mole fractions, , , 0, - (2011)
• Promises and challenges in lightemitting diodes for lighting applications, , , 0, - (2011)
• Overcoming efficiency loss mechanisms in GaNbased lightemitting diodes, , , 0, - (2011)
• High performance gas sensors with an array of vertically aligned TiO2 nanohelixes, , , 0, - (2011)
• Polarizationmismatchreduced AlGaInNGaInN multiple quantum well lightemitting diodes with reduced efficiency droop, , , 0, - (2011)
• Enhanced light extraction efficiency in GaInN lightemitting diodes by gradedrefractiveindex micropillars, , , 0, - (2010)
• Overcoming loss mechanisms in GaInN lightemitting diodes, , , 0, - (2010)
• Characteristics of reverse current in GaInN lightemitting diodes, , , 0, - (2010)
• Lightextraction efficiency of LightEmitting Diodes, , , 0, - (2010)
• light extraction enhancement of Light emitting diodes by graded refractive index antireflection contact, , , 0, - (2010)
• Overcoming the HighCurrent Loss Mechanism in GaInN LightEmitting Diodes, , , 0, - (2010)
• Solid-state lighting revolution – The replacement paradigm and beyond, ., 0, 0, - (2009)
• Solidstate lighting revolution – The replacement paradigm and beyond, , , 0, - (2009)
• Challenges and Opportunities in Solidstate Lighting, , , 0, - (2009)
• Gradedrefractiveindex Micropatterns on GaInN Lightemitting Diodes for Enhanced Light Extraction and Control Over the Far Field Emission Pattern, , , 0, - (2009)
• Nitride Based Light Emitting Diodes Embedded with a Wiregrid Polarizer, , , 0, - (2009)
• The Origin of the High Diodeideality Factors in GaInNGaN Multiple Quantum Well Lightemitting Diodes, , , 0, - (2009)
• Lowresistance Ohmic Contacts to Nface pGaN for the Fabrication of Functional Devices, , , 0, - (2009)
• III-Nitride light-emitting diodes for solid-state lighting revolution, ., 0, 0, - (2009)
• IIINitride lightemitting diodes for solidstate lighting revolution, , , 0, - (2009)
• Enhanced light extraction and controllability of far-field emission pattern of GaInN light-emitting diodes by graded-refractive-index micro-pillars, ., 0, 0, - (2009)
• Enhanced light extraction and controllability of farfield emission pattern of GaInN lightemitting diodes by gradedrefractiveindex micropillars, , , 0, - (2009)
• Light-emitting diode designs for high power applications – overcoming high-power loss mechanisms, ., 0, 0, - (2009)
• Lightemitting diode designs for high power applications – overcoming highpower loss mechanisms, , , 0, - (2009)
• Design and development of nanostructure based antireflection coatings for EO/IR sensor applications, ., 0, 0, - (2009)
• Design and development of nanostructure based antireflection coatings for EOIR sensor applications, , , 0, - (2009)
• Dual-blue emitting active regions illustrate enhancements in color rendering ability and luminous efficacy in phosphor-converted white light-emitting diodes, ., 0, 0, - (2009)
• Dualblue emitting active regions illustrate enhancements in color rendering ability and luminous efficacy in phosphorconverted white lightemitting diodes, , , 0, - (2009)
• Novel lowrefractiveindex materials and their applications, , , 0, - (2009)
• Novel low-refractive-index materials and their applications, ., 0, 0, - (2009)
• Solid-state lighting revolution and beyond, ., 0, 0, - (2009)
• Solidstate lighting revolution and beyond, , , 0, - (2009)
• Solid-state lighting revolution and beyond, ., 0, 0, - (2009)
• Solidstate lighting revolution and beyond, , , 0, - (2009)
• Solid-state lighting – Emerging market opportunity, ., 0, 0, - (2009)
• Solidstate lighting – Emerging market opportunity, , , 0, - (2009)
• Light-emitting diodes – Replacement paradigm and beyond, ., 0, 0, - (2009)
• Lightemitting diodes – Replacement paradigm and beyond, , , 0, - (2009)
• Energy implications of solid-state lighting technology, ., 0, 0, - (2009)
• Energy implications of solidstate lighting technology, , , 0, - (2009)
• Growth and characterization of GaInN blue light-emitting diodes with GaInN quantum barriers, ., 0, 0, - (2009)
• Growth and characterization of GaInN blue lightemitting diodes with GaInN quantum barriers, , , 0, - (2009)
• Low-refractive-index materials – A new class of optical thin-film materials, ., 0, 0, - (2009)
• Lowrefractiveindex materials – A new class of optical thinfilm materials, , , 0, - (2009)
• Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities, ., 0, 0, - (2009)
• Internal quantum efficiency and nonradiative recombination coefficient of GaInNGaN multiple quantum wells with different dislocation densities, , , 0, - (2009)
• Study of efficiency droop in GaInN/GaN and polarization-matched GaInN/AlGaInN and GaInN/GaInN light-emitting diodes, ., 0, 0, - (2009)
• Study of efficiency droop in GaInNGaN and polarizationmatched GaInNAlGaInN and GaInNGaInN lightemitting diodes, , , 0, - (2009)
• Light-emitting diodes – The replacement paradigm and beyond, ., 0, 0, - (2009)
• Lightemitting diodes – The replacement paradigm and beyond, , , 0, - (2009)
• Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micro-pillars, ., 0, 0, - (2009)
• Elimination of total internal reflection in GaInN lightemitting diodes by gradedrefractiveindex micropillars, , , 0, - (2009)
• Matching material polarization in GaInN light-emitting diodes – A novel concept for enhancing performance and reducing efficiency droop, ., 0, 0, - (2009)
• Matching material polarization in GaInN lightemitting diodes – A novel concept for enhancing performance and reducing efficiency droop, , , 0, - (2009)
• Solidstate lighting revolution and beyond, , , 0, - (2009)
• Solid-state lighting revolution and beyond, ., 0, 0, - (2009)
• Polarizationmatching in GaInN lightemitting diodes a new concept for reducing efficiency droop and enhancing performance, , , 0, - (2009)
• Polarization-matching in GaInN light-emitting diodes: a new concept for reducing efficiency droop and enhancing performance, ., 0, 0, - (2009)
• Quantification of porosity and deposition rate of nano-porous films grown by oblique angle deposition, ., 0, 0, - (2008)
• Quantification of porosity and deposition rate of nanoporous films grown by oblique angle deposition, , , 0, - (2008)
• Polarized c-plane GaInN/GaN light-emitting diodes, ., 0, 0, - (2008)
• Polarized cplane GaInNGaN lightemitting diodes, , , 0, - (2008)
• Efficiency droop in GaN-based light-emitting diodes, ., 0, 0, - (2008)
• Efficiency droop in GaNbased lightemitting diodes, , , 0, - (2008)
• Relevance of Light-Emitting Diodes and Photonics for Energy, ., 0, 0, - (2008)
• Relevance of LightEmitting Diodes and Photonics for Energy, , , 0, - (2008)
• The effect of holeinjection efficiency on efficiency droop of GaNbased light emitters investigated by lightemitting triodes, , , 0, - (2008)
• The effect of hole-injection efficiency on efficiency droop of GaN-based light emitters investigated by light-emitting triodes, ., 0, 0, - (2008)
• Design of graded refractive index micro-patterns to enhance light-extraction efficiency in GaInN blue light-emitting diodes, ., 0, 0, - (2008)
• Design of graded refractive index micropatterns to enhance lightextraction efficiency in GaInN blue lightemitting diodes, , , 0, - (2008)
• GaInN vertical-structure light-emitting diodes on bulk GaN substrate with optical enhancement technique: omnidirectional reflectors and surface texture treatment, ., 0, 0, - (2008)
• GaInN verticalstructure lightemitting diodes on bulk GaN substrate with optical enhancement technique omnidirectional reflectors and surface texture treatment, , , 0, - (2008)
• The origin of efficiency droop in GaNbased lightemitting diodes and its solution, , , 0, - (2008)
• The origin of efficiency droop in GaN-based light-emitting diodes and its solution, ., 0, 0, - (2008)
• Efficiency droop in GaInNGaN LEDs the effect of dislocation density physical origin and possible solution, , , 0, - (2008)
• Efficiency droop in GaInN/GaN LEDs: the effect of dislocation density, physical origin, and possible solution, ., 0, 0, - (2008)
• Micro-patterned graded-index coatings of co-sputtered TiO2-SiO2 for enhanced light extraction from GaInN light-emitting diodes, ., 0, 0, - (2008)
• Micropatterned gradedindex coatings of cosputtered TiO2SiO2 for enhanced light extraction from GaInN lightemitting diodes, , , 0, - (2008)
• Recombination mechanisms of GaInN light-emitting diode wafers with various dislocation densities, ., 0, 0, - (2008)
• Recombination mechanisms of GaInN lightemitting diode wafers with various dislocation densities, , , 0, - (2008)
• Multilayer nanostructured antireflection coatings with broadband omnidirectional characteristics, , , 0, - (2008)
• Multilayer nano-structured anti-reflection coatings with broad-band omnidirectional characteristics, ., 0, 0, - (2008)
• Efforts towards more efficient inorganic light-emitting diodes, ., 0, 0, - (2008)
• Efforts towards more efficient inorganic lightemitting diodes, , , 0, - (2008)
• Lightemitting diodeslooking back 100 years and looking forward to the next 10 years, , , 0, - (2008)
• Light-emitting diodes-looking back 100 years and looking forward to the next 10 years, ., 0, 0, - (2008)
• Low-refractive-index materials – A new class of materials for photonics applications, ., 0, 0, - (2008)
• Lowrefractiveindex materials – A new class of materials for photonics applications, , , 0, - (2008)
• Innovation in optical materials for the advancement of solidstate lighting technologies, , , 0, - (2008)
• Innovation in optical materials for the advancement of solid-state lighting technologies, ., 0, 0, - (2008)
• Polarization anisotropy in the light emission of blue GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrate, ., 0, 0, - (2007)
• Polarization anisotropy in the light emission of blue GaInNGaN lightemitting diodes grown on (0001) oriented sapphire substrate, , , 0, - (2007)
• Investigation on Origin of efficiency droop in GaN-based high-power light-emitting diodes, ., 0, 0, - (2007)
• Investigation on Origin of efficiency droop in GaNbased highpower lightemitting diodes, , , 0, - (2007)
• Enhancement of light extraction efficiency in GaInN blue lightemitting diodes by gradedrefractiveindex antireflection coating of cosputtered titanium dioxide and silicon dioxide, , , 0, - (2007)
• Enhancement of light extraction efficiency in GaInN blue light-emitting diodes by graded-refractive-index antireflection coating of co-sputtered titanium dioxide and silicon dioxide, ., 0, 0, - (2007)
• Effect of structural properties of AlN templates on the optical electrical and structural properties of ntype AlGaN, , , 0, - (2007)
• Effect of structural properties of AlN templates on the optical, electrical, and structural properties of n-type AlGaN, ., 0, 0, - (2007)
• Parasitic subbandgap emission originating from compensating native defects in Si doped AlGaN, , , 0, - (2007)
• Parasitic sub-band-gap emission originating from compensating native defects in Si doped AlGaN, ., 0, 0, - (2007)
• Origin of efficiency droop in GaNbased lightemitting diodes, , , 0, - (2007)
• Origin of efficiency droop in GaN-based light-emitting diodes, ., 0, 0, - (2007)
• Novel low refractive index materials and their applications, , , 0, - (2007)
• Novel low refractive index materials and their applications, ., 0, 0, - (2007)
• Parasitic sub-band-gap emission originating from compensating native defects in Si doped AlGaN, ., 0, 0, - (2007)
• Parasitic subbandgap emission originating from compensating native defects in Si doped AlGaN, , , 0, - (2007)
• Origin of efficiency droop in GaN-based light-emitting diodes, ., 0, 0, - (2007)
• Origin of efficiency droop in GaNbased lightemitting diodes, , , 0, - (2007)
• Light extraction enhancement of GaInN lightemitting diodes by gradedrefractiveindex ITO antireflection contact, , , 0, - (2007)
• Light extraction enhancement of GaInN light-emitting diodes by graded-refractive-index ITO anti-reflection contact, ., 0, 0, - (2007)
• Conductive distributed Bragg reflector fabricated by oblique angle deposition from a single material, , , 0, - (2007)
• Conductive distributed Bragg reflector fabricated by oblique angle deposition from a single material, ., 0, 0, - (2007)
• Optical thin film materials with low refractive index and their applications, , , 0, - (2007)
• Optical thin film materials with low refractive index and their applications, ., 0, 0, - (2007)
• Lightemitting diodeslooking back 100 years and looking forward to the next 10 years, , , 0, - (2007)
• Light-emitting diodes-looking back 100 years and looking forward to the next 10 years, ., 0, 0, - (2007)
• Recombination dynamics in ultraviolet light-emitting diodes with Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well active regions, ., 0, 0, - (2007)
• Recombination dynamics in ultraviolet lightemitting diodes with Sidoped AlxGa1xNAlyGa1yN multiple quantum well active regions, , , 0, - (2007)
• Enhanced light extraction in GaInN lightemitting diodes with gradedindex indium tin oxide layer, , , 0, - (2007)
• Enhanced light extraction in GaInN light-emitting diodes with graded-index indium tin oxide layer, ., 0, 0, - (2007)
• Enhanced light-extraction from InGaN quantum wells using refractive-index-matched TiO2, ., 0, 0, - (2007)
• Enhanced lightextraction from InGaN quantum wells using refractiveindexmatched TiO2, , , 0, - (2007)
• High refractive index nanoparticle-loaded encapsulants for light-emitting diodes, ., 0, 0, - (2007)
• High refractive index nanoparticleloaded encapsulants for lightemitting diodes, , , 0, - (2007)
• Highrefractive index nanoparticleloaded encapsulants for lightemitting diodes, , , 0, - (2007)
• High-refractive index nano-particle-loaded encapsulants for light-emitting diodes, ., 0, 0, - (2007)
• High lightextraction efficiency in GaInN lightemitting diode with pyramid reflector, , , 0, - (2007)
• High light-extraction efficiency in GaInN light-emitting diode with pyramid reflector, ., 0, 0, - (2007)
• Recombination dynamics at dislocations in GaInNbased lightemitting diodes, , , 0, - (2006)
• Recombination dynamics at dislocations in GaInN-based light-emitting diodes, ., 0, 0, - (2006)
• Omni-directional reflectors for GaInN vertica-structure light-emitting diodes, ., 0, 0, - (2006)
• Omnidirectional reflectors for GaInN verticastructure lightemitting diodes, , , 0, - (2006)
• Extremely high quality AlN grown on (0001) sapphire by metal-organic vapor-phase epitaxy, ., 0, 0, - (2006)
• Extremely high quality AlN grown on (0001) sapphire by metalorganic vaporphase epitaxy, , , 0, - (2006)
• Low-refractive index materials: A new class of material for optoelectronic and photonic applications, ., 0, 0, - (2006)
• Lowrefractive index materials A new class of material for optoelectronic and photonic applications, , , 0, - (2006)
• High light-extraction efficiency in GaInN light-emitting diode with pyramid reflector, ., 0, 0, - (2006)
• High lightextraction efficiency in GaInN lightemitting diode with pyramid reflector, , , 0, - (2006)
• Solid-state lighting – Opportunities for fundamental innovation, ., 0, 0, - (2006)
• Solidstate lighting – Opportunities for fundamental innovation, , , 0, - (2006)
• Improvements in light-extraction efficiency of light-emitting diodes with omni-directional reflectors, ., 0, 0, - (2006)
• Improvements in lightextraction efficiency of lightemitting diodes with omnidirectional reflectors, , , 0, - (2006)
• Solid-state lighting – Opportunities for fundamental innovation, ., 0, 0, - (2006)
• Solidstate lighting – Opportunities for fundamental innovation, , , 0, - (2006)
• Solidstate lighting – Opportunities for fundamental innovation, , , 0, - (2006)
• Solid-state lighting – Opportunities for fundamental innovation, ., 0, 0, - (2006)
• AlGaN UV LEDs emitting at 340 nm grown on AlN bulk substrates, ., 0, 0, - (2006)
• AlGaN UV LEDs emitting at 340 nm grown on AlN bulk substrates, , , 0, - (2006)
• Very high quality AlN grown on (0001) sapphire by using metal-organic vapor-phase epitaxy, ., 0, 0, - (2006)
• Very high quality AlN grown on (0001) sapphire by using metalorganic vaporphase epitaxy, , , 0, - (2006)
• Highly efficient package configurations for whitelightemitting diode lamps, , , 0, - (2006)
• Highly efficient package configurations for white-light-emitting diode lamps, ., 0, 0, - (2006)
• Enhancement of light-extraction in GaN light-emitting diodes by conductive omni-directional reflectors, ., 0, 0, - (2006)
• Enhancement of lightextraction in GaN lightemitting diodes by conductive omnidirectional reflectors, , , 0, - (2006)
• Improvements in light-extraction efficiency of light-emitting diodes, ., 0, 0, - (2006)
• Improvements in lightextraction efficiency of lightemitting diodes, , , 0, - (2006)
• AlGaN UV LEDs emitting at 340 nm grown on AlN bulk substrates, ., 0, 0, - (2006)
• AlGaN UV LEDs emitting at 340 nm grown on AlN bulk substrates, , , 0, - (2006)
• Design of high efficiency packages for white lightemitting diode lamps, , , 0, - (2006)
• Design of high efficiency packages for white light-emitting diode lamps, ., 0, 0, - (2006)
• Omnidirection reflectors for lightemitting diodes, , , 0, - (2006)
• Omni-direction reflectors for light-emitting diodes, ., 0, 0, - (2006)
• GaN lightemitting triodes for highefficiency hole injection and light emission, , , 0, - (2006)
• GaN light-emitting triodes for high-efficiency hole injection and light emission, ., 0, 0, - (2006)
• Optical Thin Films with Very Low Refractive Index and their application in photonic devices, , , 0, - (2005)
• Optical Thin Films with Very Low Refractive Index and their application in photonic devices, ., 0, 0, - (2005)
• High-power packages for phosphor-based white-light-emitting diode lamps, ., 0, 0, - (2005)
• Highpower packages for phosphorbased whitelightemitting diode lamps, , , 0, - (2005)
• Analysis of high-power packages for white-light-emitting diode lamps with remote phosphor, ., 0, 0, - (2005)
• Analysis of highpower packages for whitelightemitting diode lamps with remote phosphor, , , 0, - (2005)
• Polarizationenhanced ohmic contacts to GaInNbased blue lightemitting diodes, , , 0, - (2005)
• Polarization-enhanced ohmic contacts to GaInN-based blue light-emitting diodes, ., 0, 0, - (2005)
• Reduction of Base Access Resistance in AlGaNGaN Heterojunction Bipolar Transistors using GaInN Base Cap Layer and Selective Epitaxial Growth, , , 0, - (2005)
• Reduction of Base Access Resistance in AlGaN/GaN Heterojunction Bipolar Transistors using GaInN Base Cap Layer and Selective Epitaxial Growth, ., 0, 0, - (2005)
• Optical Thin Films with Very Low Refractive Index Consisting of Array of SiO2 Nano-rods for Photonics Applications, ., 0, 0, - (2005)
• Optical Thin Films with Very Low Refractive Index Consisting of Array of SiO2 Nanorods for Photonics Applications, , , 0, - (2005)
• Polarization-enhanced ohmic contacts to GaInN-based blue light-emitting diodes, ., 0, 0, - (2005)
• Polarizationenhanced ohmic contacts to GaInNbased blue lightemitting diodes, , , 0, - (2005)
• Trapped whisperinggallery optical modes in white lightemitting diodes lamps with remote phosphor, , , 0, - (2005)
• Trapped whispering-gallery optical modes in white light-emitting diodes lamps with remote phosphor, ., 0, 0, - (2005)
• Quantitative assessment of diffusivity and specularity of textured surfaces for light extraction in lightemitting diodes, , , 0, - (2005)
• Quantitative assessment of diffusivity and specularity of textured surfaces for light extraction in light-emitting diodes, ., 0, 0, - (2005)
• Improvement of extraction efficiency of GaInN lightemitting diodes by employing diffuse omnidirectional reflectors, , , 0, - (2005)
• Improvement of extraction efficiency of GaInN light-emitting diodes by employing diffuse omni-directional reflectors, ., 0, 0, - (2005)
• Junction temperature and thermal resistance measurement in deep-UV light-emitting diodes, ., 0, 0, - (2005)
• Junction temperature and thermal resistance measurement in deepUV lightemitting diodes, , , 0, - (2005)
• Enhancement of light extraction in GaInN lightemitting diodes by diffuse omnidirectional reflectors, , , 0, - (2005)
• Enhancement of light extraction in GaInN light-emitting diodes by diffuse omni-directional reflectors, ., 0, 0, - (2005)
• Junction and carrier temperature measurements in lightemitting diodes using three different methods, , , 0, - (2005)
• Junction and carrier temperature measurements in light-emitting diodes using three different methods, ., 0, 0, - (2005)
• Enhancement of light extraction efficiency of GaInN lightemitting diodes by omnidirectional diffuse reflectors, , , 0, - (2004)
• Enhancement of light extraction efficiency of GaInN light-emitting diodes by omni-directional diffuse reflectors, ., 0, 0, - (2004)
• Junction temperature measurement in deep UV light-emitting diodes, ., 0, 0, - (2004)
• Junction temperature measurement in deep UV lightemitting diodes, , , 0, - (2004)
• GaInN LightEmitting Diodes with Omnidirectional Reflectors, , , 0, - (2004)
• GaInN Light-Emitting Diodes with Omni-directional Reflectors, ., 0, 0, - (2004)
• Illumination sources based on multiple light-emitting diodes, ., 0, 0, - (2004)
• Illumination sources based on multiple lightemitting diodes, , , 0, - (2004)
• GaInN Light-Emitting Diodes with Omni-directional Reflectors, ., 0, 0, - (2004)
• GaInN LightEmitting Diodes with Omnidirectional Reflectors, , , 0, - (2004)
• Ptype conductivity in bulk AlxGa1–xN and AlxGa1–xNAlyGa1–yN superlattices with average Al mole fraction  20 for LED confinement layers, , , 0, - (2004)
• P-type conductivity in bulk AlxGa1–xN and AlxGa1–xN/AlyGa1–yN superlattices with average Al mole fraction  20% for LED confinement layers, ., 0, 0, - (2004)
• MetalGaN Interfacial Nanostructures and their Electrical Properties, , , 0, - (2004)
• Metal/GaN Interfacial Nanostructures and their Electrical Properties, ., 0, 0, - (2004)
• Ohmic Contacts for High-Power LEDs, ., 0, 0, - (2004)
• Ohmic Contacts for HighPower LEDs, , , 0, - (2004)
• GaInN LightEmitting Diodes with OmniDirectional Reflectors Using RareEarth Metal Oxides, , , 0, - (2003)
• GaInN Light-Emitting Diodes with Omni-Directional Reflectors Using Rare-Earth Metal Oxides, ., 0, 0, - (2003)
• Electrical properties of metal contacts on KrF excimer laser irradiated GaN, , , 0, - (2002)
• Ohmic contacts on p-type GaN for blue-light emitting devices, THE 3RD INTERNATIONAL SYMPOSIUM ON THE ADVANCED FUNCTIONAL MATERIALS IN THE NORTH-EAST REGION, 0, 0, - (2000)
• Ohmic contacts on ptype GaN for bluelight emitting devices, THE 3RD INTERNATIONAL SYMPOSIUM ON THE ADVANCED FUNCTIONAL MATERIALS IN THE NORTHEAST REGION, , 0, - (2000)
• Surface photovoltage effects in photoemission from AuGaN interfaces Importance for band bending evaluation, , , 0, - (2000)
• Evidence of band bending at the surface of ptype GaN measured by synchrotron radiation photoemission spectroscopy, , , 0, - (2000)
• Evidence of band bending at the surface of p-type GaN measured by synchrotron radiation photoemission spectroscopy, ., 0, 0, - (2000)
• Reduction of Ohmic Contact Resistivity on P-type GaN by Surface Treatment, ., 0, 0, - (1999)
• Reduction of Ohmic Contact Resistivity on Ptype GaN by Surface Treatment, , , 0, - (1999)
• The effect of surface treatment on p-GaN ohmic contact, ., 0, 0, - (1998)
• The effect of surface treatment on pGaN ohmic contact, , , 0, - (1998)