Research

International

• Enhancing reliability in oxidebased memristors using twodimensional transition metal dichalcogenides, Applied Surface Science, , 679, - (2025 )
• Pulsed iI–Vi Analysis of Slow Domain Switching in Ferroelectric Hfsub05subZrsub05subOsub2sub Using Graphene FETs, Advanced Electronic Materials, , 10, - (2024 )
• Demonstration of Steep Switching Behavior Based on Band Modulation in WSesub2sub Feedback FieldEffect Transistor, Nanomaterials, , 14, - (2024 )
• Demonstration of a low power and highspeed graphenesilicon heterojunction nearinfrared photodetector, Nanoscale Advances, , 6, 3391-3398 (2024 )
• Area and Device Count Efficient Binary Logic Circuits using Anti‐Ambipolar Switch Devices, Advanced Electronic Materials, , 10, - (2024 )
• LayerbyLayer Growth of TwoDimensional Tellurium Thin Films via UltrahighPressure Atomic Layer Deposition for pType Semiconductors, Nano Letters, , 24, 16276-16282 (2024 )
• Extremely Thin Proximity Platinum Silicide Formation Process Using ContinuousWave Laser Scanning Anneal, IEEE Electron Device Letters, , 45, 1941-1944 (2024 )
• Processes to enable hysteresisfree operation of ultrathin ALD Te pchannel fieldeffect transistors, Nanoscale Horizons, , 9, 1990-1998 (2024 )
• MoS2pSi heterojunction with graphene interfacial layer for high performance 940 nm infrared photodetector vol 604 154485 2022, Applied Surface Science, , 607, - (2023 )
• Demonstration of ptype stackchannel ternary logic device using scalable DNTT patterning process, Nano Convergence, , 10, - (2023 )
• Large scale graphene thermoelectric device with high power factor using gradient doping profile, Carbon, , 201, 467-472 (2023 )
• Reconfigurable SingleLayer Graphene Radio Frequency Antenna Device Capable of Changing Resonant Frequency, Nanomaterials, , 13, 1203- (2023 )
• Performance Evaluation of Scaled ZnO Stacked Nanosheet Channel Ternary Field Effect Transistor, IEEE ELECTRON DEVICE LETTERS, , 43, 323-326 (2022 )
• Performance enhancement of grapheneGe nearinfrared photodetector by modulating the doping level of graphene, APL Photonics, , 7, - (2022 )
• Perovskite multifunctional logic gates via bipolar photoresponse of single photodetector, Nature Communications, , 13, - (2022 )
• Highperformance nearinfrared photodetectors based on gatecontrolled graphene–germanium Schottky junction with split active junction, Nanophotonics, , 11, 1041-1049 (2022 )
• Effects of DC and AC stress on the VT shift of AlGaNGaN MISHEMTs, Current Applied Physics, , 39, 128-132 (2022 )
• SelfPowered 2D MoS2WOxWSe2 Heterojunction Photodetector Realized by Oxygen Plasma Treatment, Advanced Materials Interfaces, , 9, - (2022 )
• Dualchannel Ptype ternary DNTTgraphene barristor, SCIENTIFIC REPORTS, , 12, - (2022 )
• MoS2pSi heterojunction with graphene interfacial layer for high performance 940 nm infrared photodetector, APPLIED SURFACE SCIENCE, , 604, - (2022 )
• Demonstration of Antiambipolar Switch and Its Applications for Extremely Low Power Ternary Logic Circuits, ACS Nano, , 16, 10994-11003 (2022 )
• Highresponsivity PtSe2 photodetector enhanced by photogating effect, APPLIED PHYSICS LETTERS, , 118, - (2021 )
• Unveiling the Role of Al2O3 Interlayer in Indium–Gallium–Zinc–Oxide Transistors, Physica Status Solidi A Applications and Materials Science, , 218, - (2021 )
• Impact of PostMetal Annealing With Deuterium or Nitrogen for Curing a Gate Dielectric Using Joule Heat Driven by PunchThrough Current, IEEE ELECTRON DEVICE LETTERS, , 42, 276-279 (2021 )
• High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi2Te3 Nanowires, NANOMATERIALS, , 11, 1-9 (2021 )
• Modulation of the Electronic Properties of MXene Ti3C2Tx via SurfaceCovalent Functionalization with Diazonium, ACS Nano, , 15, 1388-1396 (2021 )
• Coppergraphene heterostructure for backendofline compatible highperformance interconnects, NPJ 2D MATERIALS AND APPLICATIONS, , 5, - (2021 )
• Direct DefectLevel Analysis of MetalInsulatorMetal Capacitor Using Internal Photoemission Spectroscopy, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, , 9, 424-428 (2021 )
• Nondestructive defect level analysis of graphene using amplitudemodulated discharge current analysis, CARBON, , 179, 627-632 (2021 )
• Drastic reliability improvement using H2O2UV treatment of HfO2 for heterogeneous integration, IEEE International Reliability Physics Symposium Proceedings, , 2021-, - (2021 )
• Direct Measurement of Transient Charging and Dipole Alignment Speed in Ferroelectric Hf05Zr05O2 Gate Dielectric Using Graphene FETs, Advanced Electronic Materials, , 7, - (2021 )
• Demonstration of programmable ternary graphene fieldeffect transistor using ferroelectric polymer doping, ORGANIC ELECTRONICS, , 93, - (2021 )
• A new route of synthesizing atomically thin 2D materials embedded in bulk oxides, JOURNAL OF APPLIED PHYSICS, , 130, - (2021 )
• Biascontrolled multifunctional transport properties of InSeBP van der Waals heterostructures, SCIENTIFIC REPORTS, , 11, - (2021 )
• Deepultraviolet Duvinduced doping in single channel graphene for pnjunction, Nanomaterials, , 11, - (2021 )
• A Facile Method for Improving Detectivity of GraphenepType Silicon Heterojunction Photodetector, Laser and Photonics Reviews, , 15, - (2021 )
• Operation Principles of ZnOAl2O3AlDMPZnO StackedChannel Ternary ThinFilm Transistor , Advanced Electronic Materials, , 7, - (2021 )
• Highly responsive nearinfrared photodetector with low dark current using graphenegermanium Schottky junction with Al2O3 interfacial layer, Nanophotonics, , 10, 1573-1579 (2021 )
• Dynamic band alignment modulation of ultrathin WOxZnO stack for high onoff ratio fieldeffect switching applications, NANOSCALE, , 12, 16755-16761 (2020 )
• Direct writing of graphite thin films by laserassisted chemical vapor deposition, CARBON, , 169, 163-171 (2020 )
• BiasModulated Multicolor Discrimination Enabled by an OrganicInorganic Hybrid Perovskite Photodetector with a pinip Configuration, LASER PHOTONICS REVIEWS, , 14, - (2020 )
• Quantitative Analysis of HighPressure Deuterium Annealing Effects on Vertically Stacked GateAllAround SONOS Memory, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 67, 3903-3907 (2020 )
• Quantitative defect density extraction method for metalinsulatormetal capacitor, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, , 35, - (2020 )
• Channel Defect Profiling and Passivation for ZnO ThinFilm Transistors, NANOMATERIALS, , 10, - (2020 )
• Performance Degradation in GrapheneZnO Barristors Due to Graphene Edge Contact, ACS APPLIED MATERIALS amp INTERFACES, , 12, 28768-28774 (2020 )
• GateModulated Ultrasensitive Visible and NearInfrared Photodetection of Oxygen PlasmaTreated WSe2 Lateral pnHomojunctions, ACS APPLIED MATERIALS INTERFACES, , 12, 23261-23271 (2020 )
• MXenes for future nanophotonic device applications, NANOPHOTONICS, , 9, 1831-1853 (2020 )
• Tunable inplane thermal conductivity of a single PEDOTPSS nanotube, NANOSCALE, , 12, 8701-8705 (2020 )
• Highquality nitrogendoped graphene films synthesized from pyridine via twostep chemical vapor deposition, CARBON, , 159, 579-585 (2020 )
• A negative electrocaloric effect in an antiferroelectric zirconium dioxide thin film, NANOSCALE, , 12, 3894-3901 (2020 )
• Scalable TwoDimensional Lateral MetalSemiconductor Junction Fabricated with Selective Synthetic Integration of TransitionMetalCarbide Mo2CDichalcogenide MoS2, ACS APPLIED MATERIALS INTERFACES, , 11, 47190-47196 (2019 )
• LowPower Complementary Logic Circuit Using PolymerElectrolyteGated Graphene Switching Devices, ACS APPLIED MATERIALS INTERFACES, , 11, 47247-47252 (2019 )
• HotCarrier Degradation Estimation of a SilicononInsulator Tunneling FET Using Ambipolar Characteristics, IEEE ELECTRON DEVICE LETTERS, , 40, 1716-1719 (2019 )
• Mechanically robust antireflective motheye structures with a tailored coating of dielectric materials, OPTICAL MATERIALS EXPRESS, , 9, 4178-4186 (2019 )
• Tunable ACDC converter using graphenegermanium barristor based halfwave rectifier, AIP ADVANCES, , 9, - (2019 )
• Enhanced PhotoResponse of Mos2 Photodetectors by a Laterally Aligned SiO2 Nanoribbon Array Substrate, CHEMNANOMAT, , 5, 1272-1279 (2019 )
• Plasmonic Transition Metal Carbide Electrodes for HighPerformance InSe Photodetectors, ACS NANO, , 13, 8804-8810 (2019 )
• CMOS technology on another level, NATURE ELECTRONICS, , 2, 272-273 (2019 )
• Avalanche Carrier Multiplication in Multilayer Black Phosphorus and Avalanche Photodetector, SMALL, , 15, - (2019 )
• Threshold Voltage Modulation of a GrapheneZnO Barristor Using a Polymer Doping Process, ADVANCED ELECTRONIC MATERIALS, , 5, - (2019 )
• TransitionMetalCarbide Mo2C Multiperiod Gratings for Realization of HighSensitivity and BroadSpectrum Photodetection, ADVANCED FUNCTIONAL MATERIALS, , 29, - (2019 )
• Interface state degradation during AC positive bias temperature instability stress, SOLIDSTATE ELECTRONICS, , 158, 46-50 (2019 )
• HighResponsivity NearInfrared Photodetector Using GateModulated GrapheneGermanium Schottky Junction, ADVANCED ELECTRONIC MATERIALS, , 5, - (2019 )
• ZnO composite nanolayer with mobility edge quantization for multivalue logic transistors, NATURE COMMUNICATIONS, , 10, - (2019 )
• Chemically doped graphene based ternary field effect transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, , 58, - (2019 )
• Enhancement of Ferroelectric Properties of SuperlatticeBased Epitaxial BiFeO3 Thin Films via Substitutional Doping Effect, JOURNAL OF PHYSICAL CHEMISTRY C, , 123, 11564-11571 (2019 )
• Piezoelectrically modulated touch pressure sensor using a graphene barristor, JAPANESE JOURNAL OF APPLIED PHYSICS, , 58, - (2019 )
• Advantages of a buriedgate structure for graphene fieldeffect transistor, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, , 34, - (2019 )
• Reversible magnetoelectric switching in multiferroic threedimensional nanocup heterostructure films, NPG ASIA MATERIALS, , 11, - (2019 )
• Contact Resistance Reduction of WS2 FETs Using HighPressure Hydrogen Annealing, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, , 6, 164-168 (2018 )
• Growth of CentimeterScale Monolayer and FewLayer WSe2 Thin Films on SiO2Si Substrate via Pulsed Laser Deposition, ADVANCED MATERIALS INTERFACES, , 5, - (2018 )
• HfO2HfS2 hybrid heterostructure fabricated via controllable chemical conversion of twodimensional HfS2, NANOSCALE, , 10, 18758-18766 (2018 )
• Operation Mechanism of a MoS2BP Heterojunction FET, NANOMATERIALS, , 8, - (2018 )
• VeryLowTemperature Integrated Complementary GrapheneBarristorBased Inverter for ThinFilm Transistor Applications, ANNALEN DER PHYSIK, , 530, - (2018 )
• Facile process to clean PMMA residue on graphene using KrF laser annealing, AIP ADVANCES, , 8, - (2018 )
• Reliable peripheral anchorassisted transfer printing of ultrathin SiO2 for a transparent and flexible IGZObased inverter, MICROELECTRONIC ENGINEERING, , 197, 15-22 (2018 )
• Flexible Transparent Nanogenerators Utilizing ShapeModulated ZnO Nanorod Arrays on Graphene Electrodes, ADVANCED MATERIALS TECHNOLOGIES, , 3, - (2018 )
• Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride, ADVANCED FUNCTIONAL MATERIALS, , 28, - (2018 )
• Contact resistance reduction of ZnO thin film transistors TFTs with sawshaped electrode, NANOTECHNOLOGY, , 29, - (2018 )
• Charge transfer in graphenepolymer interfaces for CO2 detection, NANO RESEARCH, , 11, 3529-3536 (2018 )
• Quantitative Analysis of Deuterium Annealing Effect on PolySi TFTs by Low Frequency Noise and DC IV Characterization, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 65, 1640-1644 (2018 )
• GateControlled GrapheneSilicon Schottky Junction Photodetector, SMALL, , 14, - (2018 )
• Chemically induced Fermi level pinning effects of highk dielectrics on graphene, SCIENTIFIC REPORTS, , 8, - (2018 )
• Effect of ribbon width on electrical transport properties of graphene nanoribbons, NANO CONVERGENCE, , 5, - (2018 )
• Unique reliability characteristics of fully depleted silicononinsulator tunneling FET, JAPANESE JOURNAL OF APPLIED PHYSICS, , 57, - (2018 )
• Generalized Scheme for High Performing Photodetectors with a pType 2D Channel Layer and nType Nanoparticles, SMALL, , 14, - (2018 )
• ZeroBias Operation of CVD Graphene Photodetector with Asymmetric Metal Contacts, ACS PHOTONICS, , 5, 365-370 (2018 )
• Highpressure oxygen annealing of Al2O3 passivation layer for performance enhancement of graphene fieldeffect transistors, NANOTECHNOLOGY, , 29, - (2018 )
• Tunable graphene doping by modulating the nanopore geometry on a SiO2Si substrate, RSC ADVANCES, , 8, 9031-9037 (2018 )
• GrapheneZnO N barristor on a polyethylene naphthalate substrate, AIP ADVANCES, , 8, - (2018 )
• Epitaxial Synthesis of Molybdenum Carbide and Formation of a Mo2CMoS2 Hybrid Structure via Chemical Conversion of Molybdenum Disulfide, ACS NANO, , 12, 338-346 (2018 )
• Tailoring Crystallographic Orientations to Substantially Enhance Charge Separation Efficiency in Anisotropic BiVO4 Photoanodes, ACS CATALYSIS, , 8, 5952-5962 (2018 )
• Ternary Full Adder Using MultiThreshold Voltage Graphene Barristors, IEEE Electron Device Letters, , 39, 1948-1951 (2018 )

Invited Talk or Presentations

• Device Structure Optimization to Reduce the Hysteresis of TelluriumBased FieldEffect Transistors, , 0, 0, - (2024)
• Characteristics of AntiFerroelectric ZrO2 Treated with Continues WaveLaser Scanning Annealing CWLSA, , 0, 0, - (2024)
• Cryogenic Operation Characteristics of Tellurium pFETs, , 0, 0, - (2024)
• BEOLCompatible ZnOTe Antiambipolar Switch for Energyefficient Applications, , 0, 0, - (2024)
• 1f Noise Analysis in UltraThin sub5 nm ZnO nFETs, , 0, 0, - (2024)
• Reconfigurable LogicinMemory LIM Device using Complementary Floating Gate Field Effect Transistor, , 0, 0, - (2024)
• High Performance Ternary and Binary Circuit Integration using ZnOTe Thinfilm, , 0, 0, - (2024)
• Radiation hardness of highperformance Te pFET via Al2O3 passivation, , 0, 0, - (2024)
• Characterization of ferroelectric annealing using Continues WaveLaser Scanning Annealing CWLSA, , 0, 0, - (2024)
• Characterization of ALDgrown Tellurium FETs as a function of precursor pressure, , 0, 0, - (2024)
• Demonstration of ZnOTe Antiambipolar Switch Compatible with BEOL for Energyefficient System , , 0, 0, - (2024)
• Effect of HighPressure Hydrogen Annealing on UltraThin ZnO Field Effect Transistor, , 0, 0, - (2024)
• High performance TeZnO CMOS inverter operated at 77K, , 0, 0, - (2024)
• Ultrathin and Highquality PtSilicidation using CW Laser Annealing Process, 2024 International VLSI Symposium on Technology Systems and Applications VLSI TSA 2024 Proceedings, 0, 0, - (2024)
• P 형 Tellurium FET 의 저온 특성 분석, , 0, 0, - (2024)
• 로직 어플리케이션을 위한 델타전도 스위칭 소자의 scalability 연구, , 0, 0, - (2024)
• 극박막 상복합 ZnO 영미분전도소자의 1f 노이즈 특성 연구, , 0, 0, - (2024)
• Morphotropic phase boundary 구조를 갖는 Hf 유전막 특성 연구, , 0, 0, - (2024)
• TiO2 interlayer를 이용한 AlZnO 접촉저항 개선, , 0, 0, - (2024)
• 플라즈마 처리를 이용한 Tellurium FET 의 히스테리시스 개선, , 0, 0, - (2024)
• 수직 적층 공정을 이용한 ZnOTe 상보형 전계 효과 트랜지스터, , 0, 0, - (2024)
• A study on the effect of highpressure hydrogen annealing on ultrathin ZnO field effect transistor, , 0, 0, - (2024)
• Radiationtolerant Te pFET, , 0, 0, - (2024)
• Scalability of deltaconduction switch for logic application, , 0, 0, - (2024)
• Improvement in Contact Resistance of ZnO Thin Film Transistor by Plasma Treatment, , 0, 0, - (2023)
• Fulladder design based on reconfigurable logic device using deltaconduction switch, , 0, 0, - (2023)
• Study on Integration Process for Complementary Logic Circuit Using Ultrathin ZnO and Te Thinfilm Transistor, , 0, 0, - (2023)
• Al2O3 Passivation of ultrathin ZnO TFTs, , 0, 0, - (2023)
• Electrical Characteristics of Zero Differential Transconductance Thin Film Transistor, , 0, 0, - (2023)
• IGZO Phototransistor with Ultrahigh Sensitivity Realized by Incorporating PM6Y6 Bulk Heterojunction, , 0, 0, - (2023)
• Enhancing the Thermal Stability of the IGZO Transistors by Suppressing the Oxygen Diffusion into Metal Using SelfAssembled Monolayer for Nanoscale Devices, , 0, 0, - (2023)
• Demonstration of frequency doubler application using ZnODNTT antiAmbipolar switch device, IEEE International Conference on Microelectronic Test Structures, 0, 0, - (2023)
• Study of continuouswave RGB laser annealing for the activation of phosphorusborondoped Si deep junction with high scan speed , , 0, 0, - (2023)
• Electrical characteristics of sub5 nm SnO2 deposited using Atomic Layer Infiltration ALI process, , 0, 0, - (2023)
• Channel thickness dependent optical bandgap observed from the ptype tellurium thin film transistor, , 0, 0, - (2023)
• 고성능 델타전도 스위칭 소자 기반의 재구성 가능한 논리소자, , 0, 0, - (2023)
• Encapsulation을 이용한 P형 Tellurium TFT의 히스테리시스 특성 개선, , 0, 0, - (2023)
• n 형 영미분전도 소자의 노이즈 특성에 관한 연구, , 0, 0, - (2023)
• Green laser를 이용한 ALDHZO 강유전체 특성 구현 연구, , 0, 0, - (2023)
• 패터닝 방법을 이용한 유∙무기 TFT 기반의 논리 응용 회로 시연, , 0, 0, - (2023)
• Development of high speed grapheneSi heterojunction photodetector using an isolated well tub structure, , 0, 0, - (2023)
• Optimized Condition of Ternary Stack Channel Transistor for Low Device Count Ternary Fulladder, , 0, 0, - (2023)
• Study on the noise characteristic in ntype zerogm conduction device, , 0, 0, - (2023)
• Improvement of hysteresis characteristics of Ptype tellurium TFT using encapsulation layer, , 0, 0, - (2023)
• High performance deltaconduction switchbased reconfigurable logic device, , 0, 0, - (2023)
• 2D 물질 기반 band modulation FET의 전기적 특성에 관한 연구, , 0, 0, - (2023)
• 산화물반도체금속 계면에 원자 층 수준의 절연 막 삽입을 통한 접촉 저항 감소 및 열 안정성 향상, , 0, 0, - (2022)
• Study on the VDD scalability of complementary ternary logic circuit using stack channel ternary thin film transistor, , 0, 0, - (2022)
• Study on the stability of SnO2 stack channel ternary device, , 0, 0, - (2022)
• Optimization of DNTTbased thin film transistor and its ternary application, , 0, 0, - (2022)
• RGB CW laser annealing for Si Sourcedrain activation, , 0, 0, - (2022)
• Infrared Photodetector Arrays using EpitaxyFree and Extremely Low Power GrapheneGe Schottky Junction, , 0, 0, - (2022)
• Polymer electret을 이용한 DNTT 기반의 비휘발성 OFET 메모리, , 0, 0, - (2022)
• SnO2 삼진 로직 소자 제작 및 시간에 따른 소자 안정성 연구, , 0, 0, - (2022)
• Implantation doping profile에 따른 Nwell contact 그래핀 광검출기의 동작 메커니즘 및 반응 속도 향상에 관한 연구, , 0, 0, - (2022)
• Stack channel ternary TFT의 모델 개발과 응용 시뮬레이션, , 0, 0, - (2022)
• 전류 증폭억제를 이용한 이중 채널 P형 삼진 소자, , 0, 0, - (2022)
• 저온 성장된 ZrO2 MIM 커패시터의 전기적 특성 향상 방법에 관한 연구, , 0, 0, - (2022)
• Performance merits of scaled ZnO Stacked Nanosheet Channel Ternary Field Effect Transistor, , 0, 0, - (2022)
• 그래핀nwell SipSi 이중 접합 구조 기반의 고감도 광 검출기, , 0, 0, - (2022)
• Novel Ternary Logic Devices and Architectures Enabling Extreme Low Power Computing, , 0, 0, - (2021)