Research

국제전문학술지

• Highly biomimetic spiking neuron using SiGe heterojunction bipolar transistors for energyefficient neuromorphic systems, Scientific Reports, , 14, - (2024 )
• Enhancing Radio Frequency Performance of Graphene FieldEffect Transistors through MachineLearningBased Physical Prediction and Optimization, ACS Applied Electronic Materials, , 6, 4138-4148 (2024 )
• Lowenergy and tunable LIF neuron using SiGe bandgapengineered resistive switching transistor, Discover Nano, , 19, - (2024 )
• Neuromorphic dendritic network computation with silent synapses for visual motion perception, Nature Electronics, , , - (2024 )
• Schottky barrier memory based on heterojunction bandgap engineering for highdensity and lowpower retention, Discover Nano, , 19, - (2024 )
• Highvoltage FinFET with floating poly and highk material for enhanced intrinsic gain and safe operating area, Scientific Reports, , 14, - (2024 )
• New tunneling source follower with low 1f noise and high voltage gain, Scientific Reports, , 14, - (2024 )
• Enhanced nearinfrared photodetection via whispering gallery modes in the waveshaped sidewall silicon nanopillar arrays, Optics Express, , 31, 38013-38023 (2023 )
• Enhanced thermoelectric figure of merit in highlydoped silicon nanowires via a corrugated surface modulation, Nano Energy, , 118, 108996- (2023 )
• Fluoride ion and hydrofluoric acid detection via silicon nanosheet fieldeffect transistor sensor, Sensors and Actuators B Chemical, , 393, - (2023 )
• Hydrogen Fluoride Gas Sensor by Silicon Nanosheet FieldEffect Transistor, IEEE Sensors Journal, , 23, 16545-16552 (2023 )
• Highly Reliable Memory Operation of HighDensity ThreeTerminal Thyristor Random Access Memory, Nanoscale Research Letters, , 17, - (2022 )
• A drain extended FinFET with enhanced DCRF performance for highvoltage RF applications, Semiconductor Science and Technology, , 37, - (2022 )
• mmband surface acoustic wave devices utilizing twodimensional boron nitride, Scientific Reports, , 12, - (2022 )
• Nanosensors in clinical development of CART cell immunotherapy, Biosensors and Bioelectronics, , 206, - (2022 )
• Enhanced Thermoelectric Properties of Cobalt SilicideSilicon Heterostructured Nanowires, IEEE TRANSACTIONS ON NANOTECHNOLOGY, , 20, 54-60 (2021 )
• Inverse Design of Graphene FET by Deep Neural Network, Proceedings of the IEEE Conference on Nanotechnology, , 2021-, 134-137 (2021 )
• MmWave Surface Acoustic Wave Filter based on Hexagonal Boron Nitride, Proceedings of the IEEE Conference on Nanotechnology, , 2021-, 138-141 (2021 )
• Buffer solution optimization for accurate fluoride ion detection in tap water, JOURNAL OF ELECTROANALYTICAL CHEMISTRY, , 858, - (2020 )
• Solar Cell Using HourglassShaped Silicon Nanowires for Increased LightTrapping Path, IEEE JOURNAL OF PHOTOVOLTAICS, , 10, 475-479 (2020 )
• HighVoltage DrainExtended FinFET With a Highk Dielectric Field Plate, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 67, 1077-1084 (2020 )
• TwoDimensional Boronate Ester Covalent Organic Framework Thin Films with Large Single Crystalline Domains for a Neuromorphic Memory Device, ANGEWANDTE CHEMIEINTERNATIONAL EDITION, , 59, 8218-8224 (2020 )
• Thermal conductivity reduction by scallop shaped surface modulation in silicon nanowires, APPLIED PHYSICS LETTERS, , 116, - (2020 )
• Disorder Originated Unusual Mobility in Crystalline InGaZnO4, IEEE ELECTRON DEVICE LETTERS, , 41, 872-875 (2020 )
• Intrinsic plasticity of silicon nanowire neurotransistors for dynamic memory and learning functions, NATURE ELECTRONICS, , 3, 398-408 (2020 )
• NanosensorBased RealTime Monitoring of Stress Biomarkers in Human Saliva Using a Portable Measurement System, ACS Sensors, , 5, 4081-4091 (2020 )
• Electrical and DataRetention Characteristics of Twoterminal Thyristor Random Access Memory, IEEE Open Journal of Nanotechnology, , 1, 163-169 (2020 )
• Design Guidelines for High Sensitivity ZnO Nanowire Gas Sensors With Schottky Contact, IEEE SENSORS JOURNAL, , 19, 976-981 (2019 )
• Whispering gallery modes enhance the nearinfrared photoresponse of hourglassshaped silicon nanowire photodiodes, NATURE ELECTRONICS, , 2, 572-579 (2019 )
• Weakly Tapered Silicon Nanopillar Resonators with Spatially Well Separated Whispering Gallery Modes for SiBased Lasers, Acs Applied Nano Materials, , 2, 4852-4858 (2019 )
• Vertical Silicon Nanowire Thermoelectric Modules with Enhanced Thermoelectric Properties, Nano Letters, , 19, 747-755 (2019 )
• LaF3 electrolyteinsulatorsemiconductor sensor for detecting fluoride ions, Sensors and Actuators B Chemical, , 279, 183-188 (2019 )
• An array of metal oxides nanoscale hetero pn junctions toward designable and highlyselective gas sensors, SENSORS AND ACTUATORS BCHEMICAL, , 255, 1663-1670 (2018 )
• Bandgap Engineering and Strain Effects of CoreShell Tunneling FieldEffect Transistors, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 65, 277-281 (2018 )
• Ultrasensitive detection of Ebola matrix protein in a memristor mode, Nano Research, , 11, 1057-1068 (2018 )
• Electrical Characteristics of Doped Silicon Nanowire Channel FieldEffect Transistor Biosensors, IEEE Sensors Journal ensors, , 17, 667-673 (2017 )
• Performance and Variations Induced by Single Interface Trap of Nanowire FETs at 7nm Node, IEEE Transaction on Electron Devices, , 64, 339-345 (2017 )
• CoreShell homojunction silicon vertical nanowire tunneling fieldeffect transistors, Scientific Reports, , , - (2017 )
• Investigation of DC Characteristics in Polysilicon Nanowire Tunneling FieldEffect Transistors, Journal of Nanoscience and Nanotechnology, , 17, 3071-3076 (2017 )
• Nanowire sensors monitor bacterial growth kinetics and response to antibiotics, LAB ON A CHIP, , 17, 4283-4293 (2017 )
• Negative Photoconductance in Heavily Doped Si Nanowire FieldEffect Transistors, Nano Letters, , 17, 6727-6734 (2017 )
• Optical Characteristics of SiliconBased Asymmetric Vertical Nanowire Photodetectors, IEEE Transactions on Electron Devices, , 64, 2261-2266 (2017 )
• Optimization of Signal to Noise Ratio in Silicon Nanowire ISFET Sensors, IEEE Sensors Journal, , 17, 2792-2796 (2017 )
• Polysilicon nearinfrared photodetector with performance comparable to crystalline silicon devices, OPTICS EXPRESS, , 25, 32910-32918 (2017 )
• Variability study of Si nanowire FETs with different junction gradients, AIP advances, , 6, - (2016 )
• Effects of single grain boundary and random interface traps on electrical variations of sub30 nm polysilicon nanowire structures, MICROELECTRONIC ENGINEERING, , 149, 113-116 (2016 )
• ProcessInduced Variations of 10nm Node Bulk nFinFETs Considering MiddleofLine Parasitics, IEEE Transactions on Electron Devices, , 63, 3399-3405 (2016 )
• Statistical variability study of random dopant fluctuation on gateallaround inversionmode silicon nanowire fieldeffect transistors, APPLIED PHYSICS LETTERS, , 106, - (2015 )
• Junction Design Strategy for Si Bulk FinFETs for SystemonChip Applications Down to the 7nm Node, IEEE ELECTRON DEVICE LETTERS, , 36, 994-996 (2015 )
• Threedimensional simulation of threshold voltage variations due to an oblique single grain boundary in sub40nm polysilicon nanowire FETs, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, , 30, - (2015 )
• Chemical Gated Field Effect Transistor by Hybrid Integration of OneDimensional Silicon Nanowire and TwoDimensional Tin Oxide Thin Film for Low Power Gas Sensor, ACS APPLIED MATERIALS INTERFACES, , 7, 21263-21269 (2015 )
• Investigation of RC Parasitics Considering MiddleoftheLine in SiBulk FinFETs for Sub14nm Node Logic Applications, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 62, 3441-3444 (2015 )
• High efficiency silicon solar cell based on asymmetric nanowire, SCIENTIFIC REPORTS, , 5, - (2015 )
• Silicon Nanowire Biologically Sensitive Field Effect Transistors Electrical Characteristics and Applications, Journal of Nanoscience and Nanotechnology, , 14, 273-287 (2014 )
• Optimized operation of silicon nanowire field effect transistor sensors, NANOTECHNOLOGY, , 25, - (2014 )
• Threshold Voltage Variations Due to Oblique Single Grain Boundary in Sub50nm Polysilicon Channel, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 61, 2705-2710 (2014 )
• Singlecrystalline CdTe nanowire field effect transistors as nanowirebased photodetector, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, , 16, 22687-22693 (2014 )
• Vertical gateallaround junctionless nanowire transistors with asymmetric diameters and underlap lengths, APPLIED PHYSICS LETTERS, , 105, - (2014 )
• Thermally PhaseTransformed In2Se3 Nanowires for Highly Sensitive Photodetectors, SMALL, , 10, 3795-3802 (2014 )
• Investigation of LowFrequency Noise in ptype Nanowire FETs Effect of Switched Biasing Condition and Embedded SiGe Layer, IEEE ELECTRON DEVICE LETTERS, , 35, 702-704 (2014 )
• Universal relaxation characteristic of interface trap under FN and NBTI stress in pMOSFET device, ELECTRONICS LETTERS, , 50, 1877-U245 (2014 )
• Improved performance of In2Se3 nanowire phasechange memory with SiO2 passivation, SolidState Electronics, , 80, 10-13 (2013 )
• Analytic Model of SD Series Resistance in Trigate FinFETs with Polygonal Epitaxy, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 60, 1302-1309 (2013 )
• Investigation of the electrical stability of Sinanowire biologically sensitive fieldeffect transistors with embedded AgAgCl pseudo reference electrode, RSC Advances, , 3, 7963-7969 (2013 )
• Simple SourceDrain Series Resistance Extraction Method Optimized for Nanowire, IEEE ELECTRON DEVICE LETTERS, , 34, 828-830 (2013 )
• Improved Electrical Characteristics of HoneycombNanowire ISFETs, IEEE ELECTRON DEVICE LETTERS, , 34, 1059-1061 (2013 )
• Study on a Scaling Length Model for Tapered Trigate FinFET based on 3D Simulation and Analytical Analysis, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 60, 2721-2727 (2013 )
• Investigation of electromigration in In2Se3 nanowire for phase change memory devices, APPLIED PHYSICS LETTERS, , 103, 233504-1-233504-4 (2013 )
• Electrical characteristics of 20nm junctionless Si nanowire transistors, SolidState Electronics, , 73, 7-10 (2012 )
• Optical and electrical characteristics of asymmetric nanowire solar cells, JOURNAL OF APPLIED PHYSICS, , 111, 73102- (2012 )
• Characteristics of gateallaround silicon nanowire field effect transistors with asymmetric channel width and sourcedrain doping concentration, JOURNAL OF APPLIED PHYSICS, , 112, - (2012 )
• Device Design Guidelines for Nanoscale FinFETs in RFAnalog Applications, IEEE ELECTRON DEVICE LETTERS, , 33, 1234-1236 (2012 )
• Characterization of Channel Diameter Dependent Low Frequency Noise in Silicon Nanowire Field Effect Transistors, IEEE ELECTRON DEVICE LETTERS, , 33, 1348-1350 (2012 )
• Characterization and Modeling of 1f Noise in Sinanowire FETs Effects of Cylindrical Geometry and Different Processing of Oxides, IEEE TRANSACTIONS ON NANOTECHNOLOGY, , 10, 417-423 (2011 )
• CV Characteristics in Undoped GateAllAround Nanowire FET Array, IEEE ELECTRON DEVICE LETTERS, , 32, 116-118 (2011 )
• An Analysis of the Field Dependence of Interface Trap Generation under Negative Bias Temperature Instability Stress using Wentzel Kramers Brillouin with Density Gradient Method, Japanese Journal of Applied Physics, , 50, - (2011 )
• A 3D Statistical Simulation Study of Mobility Fluctuations in MOSFET Induced by Discrete Trapped Charges in SiO2 Layer, IEEE TRANSACTIONS ON NANOTECHNOLOGY, , 10, 699-705 (2011 )
• InterfacialLayerDriven Dielectric Degradation and Breakdown of HfSiONSiON Gate Dielectric nMOSFETs, IEEE ELECTRON DEVICE LETTERS, , 32, 1319-1321 (2011 )
• Silicon nanowire ion sensitive field effect transistor with integrated AgAgCl electrode pH sensing and noise characteristics, Analyst, , 136, 5012-5016 (2011 )
• Comprehensive Study of QuasiBallistic Transport in HighkMetal Gate nMOSFETs, IEEE ELECTRON DEVICE LETTERS, , 32, 1474-1476 (2011 )
• New Investigation of Hot Carrier Degradation on RF SmallSignal Parameter and Performance in HighkMetal Gate nMOSFETs, IEEE ELECTRON DEVICE LETTERS, , 32, 1668-1670 (2011 )
• Characteristics of the Series Resistance Extracted from SiNanowire FETs using the Yfunction Technique, IEEE TRANSACTIONS ON NANOTECHNOLOGY, , 9, 212-217 (2010 )
• Comparison of Series Resistance and Mobility Degradation Extracted from n and ptype SiNWFETs Using the Yfunction Technique, JAPANESE JOURNAL OF APPLIED PHYSICS, , 49, 4DN06-01-4DN06-05 (2010 )
• Characterization of NearInterface Oxide Trap Density in Nitrided Oxides for NanoScale MOSFET Applications, IEEE TRANSACTIONS ON NANOTECHNOLOGY, , 8, 654-658 (2009 )
• A Comparative Study of the DRAM Leakage Mechanism for Planar and Recessed Channel MOSFETs, SOLIDSTATE ELECTRONICS, , 53, 998-1000 (2009 )
• Threedimensional Simulation of Dopant Fluctuation Induced Threshold Voltage Dispersion in Nonplanar MOS Structures Targeting Flash EEPROM Transistors, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 55, 1456-1463 (2008 )
• A Proposal on an Optimized Device Structure With Experimental Studies on Recent Devices for the DRAM Cell Transistor, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 54, 3325-3335 (2007 )
• Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage Distributions in Flash Memory Cells, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 53, 3012-3019 (2006 )
• Reliable Extraction of Cycling Induced Interface States Implementing Realistic PE Stresses in Reference Cell Comparison with Flash Memory Cell, IEEE ELECTRON DEVICE LETTERS, , 27, 169-171 (2006 )
• Design Technique for Ramped Gate SoftProgramming in OverErased NOR Type Flash EEPROM Cells, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2LETTERS EXPRESS LETTERS, , 44, L578-L580 (2005 )
• Simple Experimental Determination of the Spread of Trapped Hot Holes Injected in SiliconOxideNitrideOxideSilicon SONOS Cells Optimized Erase and Cell Shrinkage, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2LETTERS EXPRESS LETTERS, , 43, L1611-L1613 (2004 )
• Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell Effects of Localized Electron Trapping, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2LETTERS EXPRESS LETTERS, , 43, L1581-L1583 (2004 )
• High Speed Low Power Programming in 017mum Channel Length NORtype Floating Gate Flash Memory Cell Free of Drain TurnOn Effects, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2LETTERS, , 43, L224-L226 (2004 )

학회발표

• Light management through gradual diametermodulation of waveshaped sidewall silicon nanopillar, , 0, 0, - (2024)
• ThreeTerminal Thyristor Random Access Memory Realized on a Monolithic Silicon CMOS Photonic Platform, 2024 Conference on Lasers and ElectroOptics CLEO 2024, 0, 0, - (2024)
• Lowpower and Tunable Artificial Neuron using Resistive Switching Transistor based on Heterojunction, , 0, 0, - (2024)
• Design of Capacitorless Memory for Lowpower and GHz Operations, , 0, 0, - (2024)
• Tunnelingbased Source Follower for Low Noise Image Sensor, , 0, 0, - (2024)
• An Ultralow Power 3D DRAM based on SiGe Heterojunction, , 0, 0, - (2024)
• Lowpower and Tunable Leaky IntegrateandFire Neuron using Resistive Switching Transistor based on SiliconGermanium Heterojunction, , 0, 0, - (2024)
• An analysis of nearinfrared absorption in silicon nanowires with wavysidewalls, , 0, 0, - (2024)
• Reliability Assessment of HighVoltage FinFET Technology for RF Applications, , 0, 0, - (2024)
• Thermal conductivity reduction by phonon backscattering in a silicon nanowire with wavy surfaces , , 0, 0, - (2024)
• Investigating corrugated sidewall effect of silicon nanopillars on nearinfrared photodetector, , 0, 0, - (2023)
• Highly biomimetic integrateandfire neuron circuit based on SiGe resistive switching transistors, , 0, 0, - (2023)
• High thermoelectric figure of merit in silicon nanowire via corrugated surfaces , , 0, 0, - (2023)
• NearInfrared Light Detection Enhancement Using Corrugated Sidewall Silicon Nanopillar Arrays, , 0, 0, - (2023)
• A novel source follower design and analysis using tunneling mechanism for image sensor, , 0, 0, - (2023)
• Silicon based Nano Memory devices and Sensor Technologies, , 0, 0, - (2023)
• A Novel Schottky Barrier Memory with Highdensity and Lowpower Consumption using Bandgap Engineering, , 0, 0, - (2023)
• Comprehensive Reliability Analysis for a Novel High Voltage RF FinFET, , 0, 0, - (2023)
• Highly Biomimetic Artificial Neuron Circuit using Dual Silicon Nanowirebased Resistive Switching Transistors with SiGe base for Adaptive Spiking Neural Networks, , 0, 0, - (2023)
• Sensitive Detection of Hydrofluoric Acid Via Silicon Nanosheet FieldEffect Transistor Sensor, , 0, 0, - (2023)
• New Highdensity and Lowpower Capacitorless DRAM SBRAM using Schottky Barrier and Bandgap Engineering, , 0, 0, - (2023)
• Silicon nanosheet FET gas sensor for roomtemperature hydrogen fluoride gas detection, , 0, 0, - (2022)
• A FinFET Design for Superior HighVoltage Performance, Proceedings of the IEEE Conference on Nanotechnology, 0, 0, 283-286 (2022)
• Schottky Barrier based Double PN Junction Synapse with SONOS Structure, , 0, 0, - (2022)
• HighVoltage FinFET with Superior DCRF Performance using Dual Material Gate and Highk Field Plate, , 0, 0, - (2022)
• Neuromorphic hybrid systems based on polarizable thin filmcoated silicon nanowire fieldeffect transistors, International Workshop on Cellular Nanoscale Networks and their Applications, 0, 0, - (2021)
• Twoterminal Random Access Memory based on Schottky Barrier, , 0, 0, - (2021)
• 고감도 불소 이온 검출을 위한 실리콘 나노시트 채널 구조 기반 ISFET 센서, , 0, 0, - (2021)
• 밀리미터파 대역 통신을 위한 육방정계 질화 붕소 기반의 표면탄성파 필터, , 0, 0, - (2021)
• 딥러닝을 이용한 고주파용 그래핀 전계 트랜지스터의 게이트 구조 디자인, , 0, 0, - (2021)
• Breakdown Mechanism Analysis and Optimization of High Voltage FinFET with Highk Dielectric Field Plate, , 0, 0, - (2021)
• Highly Reliable Threeterminal Thyristor Random Access Memory with Excellent Retention Characteristics, , 0, 0, - (2021)
• Silicon Nanosheet ISFET Sensor based on PolyLaF3 Sensing Membrane for Highly Sensitive Fluoride ion Detection, , 0, 0, - (2021)
• Metal iondoped solgel film for emulating synaptic activity and shortterm nonvolatile memory, 26th IEEE International Conference on Electronics Circuits and Systems, 0, 0, - (2019)
• Siliconbased Biochemical Sensor for PointofCare Application, The 13th IEEE Int’l Conference on NanoMolecular Medicine Engineering, 0, 0, - (2019)
• Sensitivity Analysis of Silicon Nanowire ISFET Sensor with LaF3 Membrane, Proceedings of the IEEE Conference on Nanotechnology, 0, 0, 293-296 (2019)
• Photoluminescence Characteristics of Silicon Nanopillar Structures, -, 0, 0, - (2018)
• EIS sensor for fluoride ion detection based on LaF3 film, -, 0, 0, - (2018)
• Vertical Nanowire Tunneling FieldEffect Transistors adopting Coreshell Structure with Strain Effects, 2018 IEEE 8th International Nanoelectronics Conferences INEC 2018, 0, 0, 3-4 (2018)
• An array of metal oxides nanoscale hetero p-n junctions toward designable and highly-selective gas sensors, 2017 MRS Fall meeting & Exhibit, 0, 0, - (2017)
• Gate controlled memristor for Ebola biosensing, -, 0, 0, - (2017)
• Noise Characteristics of Silicon Nanowire ISFET Sensors with different channel doping concentration, NanoBioSensors, 0, 0, - (2017)
• Silicon Nanowire Based Thermoelectric Device for Energy Harvesting, -, 0, 0, - (2017)
• Gas sensitivity analysis of single ZnO nanowire gas sensor having different defect density, dimension and material properties, NANO KOREA 2017, 0, 0, - (2017)
• Silicon Tunneling FieldEffect Transistors having CoreShell Structure, , 0, 0, - (2017)
• Investigation of nanoscale grain boundary effect on polysilicon nearinfrared photodetector, , 0, 0, - (2017)
• Thermal conductivity analysis of vertical Si nanowire array using differential 3ω method, , 0, 0, - (2017)
• Silicon-based Tunneling Field-Effect Transistors for Ultra-low Power Applications, -, 0, 0, - (2017)
• Silicon-based near infrared photodetector with high responsivity, -, 0, 0, - (2017)
• The investigation of the responsivity on silicon photodetector depend on deposition technique, -, 0, 0, - (2017)
• Gas sensitivity variation with different defect density and dimensions in single ZnO nanowire gas sensor, -, 0, 0, - (2017)
• Differential 3w method for measuring thermal conductivity of silicon nanowire, -, 0, 0, - (2017)
• DC characteristics in polysilicon nanowire tunneling field-effect transistors, -, 0, 0, - (2017)
• Energy and Sensor Applications based on Silicon Nanotechnology, , 0, 0, - (2016)
• Simulation and characterization of electronic and photonic devices using silicon nanowire structure, , 0, 0, - (2016)
• Honeycomb Nanowire Field Effect Transistor Sensor and Its Applicaiotns, , 0, 0, - (2015)
• The Statistical Distribution of Electrical Characteristics with Random Grain Boundary in Vertical NAND Unit Cells, , 0, 0, - (2015)
• Various Heterojunction Single Gate Tunneling FETs with Graded Channel Doping in Sub40 nm Channels, , 0, 0, - (2015)
• The Variability due to Random Discrete Dopant and Grain Boundaryin 3D NAND Unit Cell, ., 0, 0, - (2014)
• The Temperature Dependence of Threshold Voltage Variations due to Oblique Sing Grain Boundary in 3D NAND unit Cells, , 0, 0, - (2014)
• Noise Consideration for Cancer Marker Detection Using Nanowire Sensors, , 0, 0, - (2014)
• The Variability due to Random Discrete Dopant and Grain Boundaryin 3D NAND Unit Cell, , 0, 0, - (2014)
• 3D Simulation of Threshold Voltage Variations Due to Random Grain Boundary and Discrete Dopants in Sub20 nm GateAllAround PolySiTransistor, , 0, 0, - (2014)
• Silicon Nanowire and its Application, , 0, 0, - (2013)
• Characterization of Low Frequency Noise in Nanowire FETs Considering Variability and Quantum Effects, , 0, 0, - (2013)
• Characterization of Silicon Nanowire Biosensors and Solar Cells, , 0, 0, - (2012)
• Modeling and Analysis of the Parasitic Series Resistance in Raised SourceDrain FinFETs with Polygonal Epitaxy, , 0, 0, - (2012)
• An Improved 3D Monte Carlo Simulation of Reaction Diffusion Model for Accurate Prediction of the NBTI StressRelaxation, , 0, 0, - (2012)
• Determination of Operation Region in SiliconNanowire BioFETs to Maximize SignaltoNoise Ratio, , 0, 0, - (2012)
• Intrinsic Reliability Improvement of SiGe Quantum Well pMOSFETs, , 0, 0, - (2012)
• Si Thin Film Solar Cell with Asymmetric PN Junction, , 0, 0, - (2012)
• Analysis of Bottom Channel Effect in Silicon Nanowire FET based on BulkSilicon Reduction of Parasitic Capacitance caused by SiGe layer, , 0, 0, - (2011)
• Fabrication and Characterization of GateAllAround Silicon Nanowire Field Effect Transistors, , 0, 0, - (2011)
• Analysis of Parasitic Bottom Capacitance in n and ptype SiNanowire Field Effect Transistors on Bulk, , 0, 0, - (2011)
• Comparative study of fabricated junctionless and inversionmode nanowire FETs, , 0, 0, - (2011)
• pH Sensing and Noise Characteristics of Si Nanowire IonSensitive Field Effect Transistors, , 0, 0, - (2011)
• Universality in the Interface Trap Relaxation of NBTI and FN Stress Measurement by Subthreshold Slope Method on nMOSFET and Its Modeling, , 0, 0, - (2011)
• Characteristics and modeling of Sinanowire FETs, , 0, 0, - (2010)
• Comparative study of CV characteristics in SiNWFET and MOSFET, , 0, 0, - (2010)
• CV Characteristics and Analysis of Undoped GateAllAround Nanowire FET Array, , 0, 0, - (2010)
• 3D Simulation of NBTI in pMOSFET’s Including Discrete Interface and Oxide Traps Generation, , 0, 0, - (2010)
• Accurate Extraction of Volume Trap Density from SiNanowire FET using the Newly Developed Cylindrical Coordinate Based 1f Noise Model, , 0, 0, - (2010)